受强制性开放获取政策约束的文章 - XIAO YU了解详情
无法在其他位置公开访问的文章：40 篇
HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability
Y Peng, W Xiao, Y Liu, C Jin, X Deng, Y Zhang, F Liu, Y Zheng, Y Cheng, ...
IEEE Electron Device Letters 43 (2), 216-219, 2021
强制性开放获取政策： 国家自然科学基金委员会
Aggressive EOT Scaling of Ge pMOSFETs With HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation
R Zhang, X Tang, X Yu, J Li, Y Zhao
IEEE Electron Device Letters 37 (7), 831-834, 2016
强制性开放获取政策： 国家自然科学基金委员会
Ultra fast (< 1 ns) electrical characterization of self-heating effect and its impact on hot carrier injection in 14nm FinFETs
Y Qu, X Lin, J Li, R Cheng, X Yu, Z Zheng, J Lu, B Chen, Y Zhao
2017 IEEE International Electron Devices Meeting (IEDM), 39.2. 1-39.2. 4, 2017
强制性开放获取政策： 国家自然科学基金委员会
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films
J Chen, C Jin, X Yu, X Jia, Y Peng, Y Liu, B Chen, R Cheng, G Han
IEEE Transactions on Electron Devices 69 (9), 5297-5301, 2022
强制性开放获取政策： 国家自然科学基金委员会
Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric film
Z Gong, J Chen, Y Peng, Y Liu, X Yu, G Han
Applied Physics Letters 121 (24), 2022
强制性开放获取政策： 国家自然科学基金委员会
Real-Time Polarization Switch Characterization of HfZrO4 for Negative Capacitance Field-Effect Transistor Applications
Z Zheng, R Cheng, Y Qu, X Yu, W Liu, Z Chen, B Chen, Q Sun, DW Zhang, ...
IEEE Electron Device Letters 39 (9), 1469-1472, 2018
强制性开放获取政策： 国家自然科学基金委员会
A Fast Measurement (FVM) Technique for NBTI Behavior Characterization
X Yu, R Cheng, W Liu, Y Qu, J Han, B Chen, J Lu, Y Zhao
IEEE Electron Device Letters 39 (2), 172-175, 2017
强制性开放获取政策： 国家自然科学基金委员会
Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO2 Dielectric for Spiking Neural Network Applications
H Liu, J Li, G Wang, J Chen, X Yu, Y Liu, C Jin, S Wang, Y Hao, G Han
IEEE Transactions on Electron Devices 69 (3), 1028-1033, 2022
强制性开放获取政策： 国家自然科学基金委员会
Investigation of self-heating effect on ballistic transport characterization for Si FinFETs featuring ultrafast pulsed IV technique
R Cheng, X Yu, B Chen, J Li, Y Qu, J Han, R Zhang, Y Zhao
IEEE Transactions on Electron Devices 64 (3), 909-915, 2017
强制性开放获取政策： 国家自然科学基金委员会
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance
Y Peng, W Xiao, F Liu, C Jin, Y Cheng, L Wang, Y Zhang, X Yu, Y Liu, ...
IEEE Transactions on Electron Devices 70 (7), 3979-3982, 2023
强制性开放获取政策： 国家自然科学基金委员会
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology
FY Qiao, LY Pan, X Yu, HZ Ma, D Wu, J Xu
Science China Information Sciences 57, 1-9, 2014
强制性开放获取政策： 国家自然科学基金委员会
A multi-bit CAM design with ultra-high density and energy efficiency based on FeFET NAND
C Jin, J Xu, J Zhao, J Gu, J Chen, H Liu, H Qian, M Zhang, B Chen, ...
IEEE Electron Device Letters 44 (7), 1104-1107, 2023
强制性开放获取政策： 国家自然科学基金委员会
Disturb-free operations of multilevel cell ferroelectric FETs for NAND applications
C Jin, J Xu, J Gu, J Zhao, X Jia, J Chen, H Liu, M Zhang, Y Peng, B Chen, ...
IEEE Transactions on Electron Devices 70 (4), 1653-1658, 2023
强制性开放获取政策： 国家自然科学基金委员会
Fast-trap characterization in Ge CMOS using sub-1 ns ultra-fast measurement system
X Yu, B Chen, R Cheng, Y Qu, J Han, R Zhang, Y Zhao
2016 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2016
强制性开放获取政策： 国家自然科学基金委员会
HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications
Y Wang, Y Yang, P Jiang, S Lv, B Wang, Y Chen, Y Ding, T Gong, B Chen, ...
IEEE Electron Device Letters 44 (6), 943-946, 2023
强制性开放获取政策： 中国科学院
Ultrafast pulse characterization of hot carrier injection effects on ballistic carrier transport for sub-100 nm MOSFETs
R Cheng, X Yu, L Shen, L Yin, Y Zhang, Z Zheng, B Chen, X Liu, Y Zhao
2017 IEEE International Reliability Physics Symposium (IRPS), 3E-3.1-3E-3.6, 2017
强制性开放获取政策： 国家自然科学基金委员会
Back-gate modulation in UTB GeOI pMOSFETs with advanced substrate fabrication technique
Z Zheng, X Yu, Y Zhang, M Xie, R Cheng, Y Zhao
IEEE Transactions on Electron Devices 65 (3), 895-900, 2018
强制性开放获取政策： 国家自然科学基金委员会
Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors
Y Peng, Z Wang, W Xiao, Y Ma, F Liu, X Deng, X Yu, Y Liu, G Han, Y Hao
Ceramics International 48 (19), 28489-28495, 2022
强制性开放获取政策： 国家自然科学基金委员会
Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain
R Zhang, J Li, X Yu
IEEE Transactions on Electron Devices 64 (12), 4831-4837, 2017
强制性开放获取政策： 国家自然科学基金委员会
Experimental investigation of ballistic carrier transport for sub-100-nm Ge n-MOSFETs
R Cheng, L Yin, H Wu, X Yu, Y Zhang, Z Zheng, W Wu, B Chen, DY Peide, ...
IEEE Electron Device Letters 38 (4), 434-437, 2017
强制性开放获取政策： 国家自然科学基金委员会
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