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Srinivas Pulugurtha
Srinivas Pulugurtha
在 micron.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Vertical access device and apparatuses having a body connection line, and related method of operating the same
KM Karda, RN Gupta, S Pulugurtha, CV Mouli, W Mueller
US Patent 8,878,271, 2014
592014
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
KM Karda, C Mouli, S Pulugurtha, RN Gupta
US Patent 10,607,988, 2020
462020
Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric
SP Tiwari, P Srinivas, S Shriram, NS Kale, SG Mhaisalkar, VR Rao
Thin Solid Films 516 (5), 770-772, 2008
352008
New AAT for 4F2 DRAM with a body contact
US Patent 9,773,888, 2017
32*2017
Apparatuses having a vertical memory cell
KM Karda, RN Gupta, S Pulugurtha, CV Mouli, W Mueller
US Patent 9,577,092, 2017
222017
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
KM Karda, C Mouli, S Pulugurtha, RN Gupta
US Patent 10,381,357, 2019
172019
Memory devices including memory cells and related methods
G Huang, H Liu, CV Mouli, S Pulugurtha
US Patent 10,608,012, 2020
112020
Semiconductor devices including vertical memory cells and methods of forming same
W Mueller, SD Tang, S Dhir, S Pulugurtha
US Patent 9,373,715, 2016
112016
Passing access line structure in a memory device
US Patent 9,761,590, 2017
8*2017
Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies
SD Tang, S Pulugurtha, RJ Hill, Y Gao, NR Tapias, Y Litao, H Liu
US Patent 11,069,687, 2021
52021
Underbody contact to horizontal access device for vertical three-dimensional (3D) memory
US Patent App. 16/943,163, 2020
5*2020
Memory device having 2-transistor vertical memory cell
US Patent App. 16/722,813, 2019
5*2019
Patterned gate OFETs with inorganic High-K gate dielectric materials for all P-type Organic circuits
SP Tiwari, D Maji, P Srinivas, NS Kale, VR Rao
European Materials Research Society (EMRS) Spring Meeting, 2007
42007
Metal insulator semiconductor (MIS) contact in three dimensional (3D) vertical memory
KM Karda, DC Pandey, Y Litao, S Pulugurtha, Y Gao, H Liu
US Patent 11,538,809, 2022
32022
Recessed Access Device and DRAM Constructions
US Patent App. 15/898,086, 2018
3*2018
Integrated assemblies having conductive material along three of four sides around active regions and methods of forming integrated assemblies
US Patent App. 16/868,133, 2020
2*2020
D. maji, Ramesh RN, HN Raval, Srinivas P., V. Ramgopal Rao,“Low Voltage Organic circuits with Polythiophene semiconductor and High-K Gate dielectric”, 10th Int. Conf
SP Tiwari
Advanced Materials (ICAM), 2007
22007
Field effect transistors with gate fins and method of making the same
S Pulugurtha, Y Zhang, J Alsmeier, M Togo
US Patent App. 17/562,635, 2023
12023
Integrated assemblies, and methods of forming integrated assemblies
Y Litao, S Pulugurtha, H Liu
US Patent 11,563,010, 2023
12023
Memory device including calibration operation and transistor having adjustable threshold voltage
AJ Kanago, J Guha, S Pulugurtha, S Sugiura
US Patent App. 17/215,904, 2022
12022
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