受强制性开放获取政策约束的文章 - Chun-Min Zhang了解详情
无法在其他位置公开访问的文章:4 篇
Investigation of temperature dependence, device scalability, and modeling of semi-floating-gate transistor memory cells
X Lin, XY Liu, CM Zhang, L Liu, JS Shi, S Zhang, WB Wang, WH Bu, J Wu, ...
IEEE Transactions on Electron Devices 62 (4), 1177-1183, 2015
强制性开放获取政策: 国家自然科学基金委员会
Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
HX Zhang, CM Zhang, PF Wang
2015 China Semiconductor Technology International Conference, 1-3, 2015
强制性开放获取政策: 国家自然科学基金委员会
Investigation of spin-on-dopant for fabricating high on-current tunneling field effect transistor
WC Zhou, X Lin, XY Liu, XM Xu, CM Zhang, JS Shi, PF Wang, DW Zhang
2014 12th IEEE International Conference on Solid-State and Integrated …, 2014
强制性开放获取政策: 国家自然科学基金委员会
A Quantum-dot-coated image sensor with a wide-spectral sensitivity from X-rays to SWIR photons
CM Zhang, R Quaglia, A Shulga, V Goossens, PB Cruz, PF Rüedi
IEEE Sensors Letters, 2024
强制性开放获取政策: European Commission
可在其他位置公开访问的文章:9 篇
Characterization of gigarad total ionizing dose and annealing effects on 28-nm bulk MOSFETs
CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ...
IEEE Transactions on Nuclear Science 64 (10), 2639-2647, 2017
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
Characterization and modeling of gigarad-TID-induced drain leakage current of 28-nm bulk MOSFETs
CM Zhang, F Jazaeri, G Borghello, F Faccio, S Mattiazzo, A Baschirotto, ...
IEEE Transactions on Nuclear Science 66 (1), 38-47, 2018
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
XY Liu, SX Zhao, LQ Zhang, HF Huang, JS Shi, CM Zhang, HL Lu, ...
Nanoscale Research Letters 10, 1-6, 2015
强制性开放获取政策: 国家自然科学基金委员会
Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
S Mattiazzo, M Bagatin, D Bisello, S Gerardin, A Marchioro, ...
Journal of Instrumentation 12 (02), C02003, 2017
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
Impact of gigarad ionizing dose on 28-nm bulk MOSFETs for future HL-LHC
A Pezzotta, CM Zhang, F Jazaeri, C Bruschini, G Borghello, F Faccio, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 146-149, 2016
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
Gigarad total ionizing dose and post-irradiation effects on 28-nm bulk MOSFETs
CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ...
2016 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2016
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
Total ionizing dose effects on analog performance of 28-nm bulk MOSFETs
CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, S Mattiazzo, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 30-33, 2017
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
Bias dependence of total ionizing dose effects on 28-nm bulk MOSFETs
CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2018
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
Mobility degradation of 28-nm bulk MOSFETs irradiated to ultrahigh total ionizing doses
CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz
2018 IEEE International Conference on Integrated Circuits, Technologies and …, 2018
强制性开放获取政策: Swiss National Science Foundation, Government of Italy
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