受强制性开放获取政策约束的文章 - Dmitri Strukov了解详情
无法在其他位置公开访问的文章：4 篇
Hardware security primitive exploiting intrinsic variability in analog behavior of 3-D NAND flash memory array
S Sahay, M Klachko, D Strukov
IEEE Transactions on Electron Devices 66 (5), pp. 2158-2164, 2019
强制性开放获取政策： US Department of Defense
The impact of device uniformity on functionality of analog passively-integrated memristive circuits
Z Fahimi, MR Mahmoodi, M Klachko, H Nili, DB Strukov
IEEE Transactions on Circuits and Systems I 68 (10), 4090-4101, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Zeroth and higher-order logic with content addressable memories
G Pedretti, F Böhm, M Hizzani, T Bhattacharya, P Bruel, J Moon, ...
International Electron Devices Meeting (IEDM'23), San Francisco, CA, pp. 1-4, 2023
强制性开放获取政策： US Department of Defense
ReRAM-based neoHebbian synapses for faster training-time-to-accuracy neuromorphic hardware
T Bhattacharya, SS Bezugam, S Pande, E Wlazlak, D Strukov
IEEE International Electron Devices Meeting (IEDM'23), San Francisco, CA, pp …, 2023
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：48 篇
Memristive devices for computing
JJ Yang, DB Strukov, DR Stewart
Nature Nanotechnology 8 (1), pp. 13-24, 2013
强制性开放获取政策： US National Institutes of Health
Recommended methods to study resistive switching devices
M Lanza, et al.
Advanced Electronic Materials 5 (1), art. 1800143, 2019
强制性开放获取政策： 国家自然科学基金委员会
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
F Merrikh Bayat, M Prezioso, B Chakrabarti, H Nili, I Kataeva, D Strukov
Nature Communications 9, art. 2331, 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ...
Nature Electronics 3 (10), pp. 638-645, 2020
强制性开放获取政策： US Department of Defense, 国家自然科学基金委员会
4K-memristor analog-grade passive crossbar circuit
H Kim, MR Mahmoodi, H Nili, DB Strukov
Nature Communications 12, art. 5198, 2021
强制性开放获取政策： US National Science Foundation
3-D memristor crossbars for analog and neuromorphic computing applications
GC Adam, BD Hoskins, M Prezioso, F Merrikh Bayat, B Chakrabarti, ...
IEEE Transactions on Electron Devices 64 (1), pp. 312-318, 2017
强制性开放获取政策： US Department of Defense
Self-adaptive spike-time-dependent plasticity of metal-oxide memristors
M Prezioso, F Merrikh Bayat, B Hoskins, K Likharev, D Strukov
Nature Scientific Reports 6, art. 21331, 2016
强制性开放获取政策： US National Institutes of Health
Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits
M Prezioso, MR Mahmoodi, F Merrikh Bayat, H Nili, H Kim, A Vincent, ...
Nature Communications 9 (1), art. 5311, 2018
强制性开放获取政策： US Department of Defense
Fast, energy-efficient, robust, and reproducible mixed-signal neuromorphic classifier based on embedded NOR flash memory technology
X Guo, F Merrikh Bayat, M Bavandpour, M Klachko, MR Mahmoodi, ...
IEEE International Electron Devices Meeting (IEDM'17), San Francisco, CA, pp …, 2017
强制性开放获取政策： US Department of Defense
Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors
H Nili, GC Adam, B Hoskins, M Prezioso, J Kim, MR Mahmoodi, ...
Nature Electronics 1 (3), art. 197, 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
High-performance mixed-signal neurocomputing with nanoscale floating-gate memory cell arrays
F Merrikh Bayat, X Guo, M Klachko, M Prezioso, KK Likharev, DB Strukov
IEEE Transactions on Neural Networks and Learning Systems 29 (10), pp. 4782 …, 2018
强制性开放获取政策： US Department of Defense
Nanoscale resistive switching in amorphous perovskite oxide (a‐SrTiO3) memristors
H Nili, S Walia, S Balendhran, DB Strukov, M Bhaskaran, S Sriram
Advanced Functional Materials 24 (43), pp. 6741-6750, 2014
强制性开放获取政策： Australian Research Council
Recent advances and future prospects for memristive materials, devices, and systems
MK Song, JH Kang, X Zhang, W Ji, A Ascoli, I Messaris, AS Demirkol, ...
ACS nano 17 (13), 11994-12039, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit
B Chakrabarti, MA Lastras-Montaño, G Adam, M Prezioso, B Hoskins, ...
Nature Scientific Reports 7, art. 42429, 2017
强制性开放获取政策： US Department of Defense
Mellow writes: Extending lifetime in resistive memories through selective slow write backs
L Zhang, B Neely, D Franklin, D Strukov, Y Xie, FT Chong
ACM/IEEE International Symposium on Computer Architecture (ISCA'16), pp. 519-531, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Donor‐induced performance tuning of amorphous SrTiO3 memristive nanodevices: Multistate resistive switching and mechanical tunability
H Nili, S Walia, AE Kandjani, R Ramanathan, P Gutruf, T Ahmed, ...
Advanced Functional Materials 25 (21), pp. 3172-3182, 2015
强制性开放获取政策： Australian Research Council
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