| Electron scattering at surfaces and grain boundaries in Cu thin films and wires JS Chawla, F Gstrein, KP O’Brien, JS Clarke, D Gall Physical Review B—Condensed Matter and Materials Physics 84 (23), 235423, 2011 | 199 | 2011 |
| Specular electron scattering at single-crystal Cu (001) surfaces JS Chawla, D Gall Applied Physics Letters 94 (25), 2009 | 121 | 2009 |
| Scanning electron microscope measurement of width and shape of 10 nm patterned lines using a JMONSEL-modeled library JS Villarrubia, AE Vladár, B Ming, RJ Kline, DF Sunday, JS Chawla, S List Ultramicroscopy 154, 15-28, 2015 | 117 | 2015 |
| Variable-range hopping conduction in epitaxial CrN (001) XY Zhang, JS Chawla, BM Howe, D Gall Physical Review B—Condensed Matter and Materials Physics 83 (16), 165205, 2011 | 99 | 2011 |
| Effective electron mean free path in TiN (001) JS Chawla, XY Zhang, D Gall Journal of Applied Physics 113 (6), 2013 | 93 | 2013 |
| Determining the shape and periodicity of nanostructures using small-angle x-ray scattering DF Sunday, S List, JS Chawla, RJ Kline Journal of Applied Crystallography 48 (5), 1355-1363, 2015 | 84 | 2015 |
| Effect of O2 adsorption on electron scattering at Cu (001) surfaces JS Chawla, F Zahid, H Guo, D Gall Applied Physics Letters 97 (13), 2010 | 77 | 2010 |
| Epitaxial suppression of the metal-insulator transition in CrN XY Zhang, JS Chawla, RP Deng, D Gall Physical Review B—Condensed Matter and Materials Physics 84 (7), 073101, 2011 | 68 | 2011 |
| Epitaxial TiN (001) wetting layer for growth of thin single-crystal Cu (001) JS Chawla, XY Zhang, D Gall Journal of Applied Physics 110 (4), 2011 | 49 | 2011 |
| Epitaxial Ag (001) grown on MgO (001) and TiN (001): Twinning, surface morphology, and electron surface scattering JS Chawla, D Gall Journal of Applied Physics 111 (4), 2012 | 48 | 2012 |
| Surface roughness dependence of the electrical resistivity of W (001) layers PY Zheng, T Zhou, BJ Engler, JS Chawla, R Hull, D Gall Journal of Applied Physics 122 (9), 2017 | 43 | 2017 |
| Method of forming high density, high shorting margin, and low capacitance interconnects by alternating recessed trenches CJ Jezewski, JS Chawla US Patent 9,054,164, 2015 | 32 | 2015 |
| 10nm three-dimensional CD-SEM metrology AE Vladár, JS Villarrubia, J Chawla, B Ming, JR Kline, S List, MT Postek Metrology, Inspection, and Process Control for Microlithography XXVIII 9050 …, 2014 | 32 | 2014 |
| Structural characterization of a Cu/MgO (001) interface using CS-corrected HRTEM S Cazottes, ZL Zhang, R Daniel, JS Chawla, D Gall, G Dehm Thin Solid Films 519 (5), 1662-1667, 2010 | 31 | 2010 |
| Method and structure to contact tight pitch conductive layers with guided vias using alternating hardmasks and encapsulating etchstop liner scheme JS Chawla, RA Brain, RE Schenker, KJ Singh, AM Myers US Patent 10,032,643, 2018 | 26 | 2018 |
| Resistance and electromigration performance of 6 nm wires JS Chawla, SH Sung, SA Bojarski, CT Carver, M Chandhok, RV Chebiam, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 25 | 2016 |
| Diagonal hardmasks for improved overlay in fabricating back end of line (BEOL) interconnects AM Myers, KJ Singh, RL Bristol, JS Chawla US Patent 9,209,077, 2015 | 25 | 2015 |
| Evaluation of the effect of data quality on the profile uncertainty of critical dimension small angle x-ray scattering DF Sunday, S List, JS Chawla, R Joseph Kline Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (1), 014001-014001, 2016 | 24 | 2016 |
| Nickel silicide for interconnects KL Lin, SA Bojarski, CT Carver, M Chandhok, JS Chawla, JS Clarke, ... 2015 IEEE International Interconnect Technology Conference and 2015 IEEE …, 2015 | 21 | 2015 |
| Patterning challenges in the fabrication of 12 nm half-pitch dual damascene copper ultra low-k interconnects JS Chawla, KJ Singh, A Myers, DJ Michalak, R Schenker, C Jezewski, ... Advanced Etch Technology for Nanopatterning III 9054, 905404, 2014 | 21 | 2014 |
Daniel GallProfessor, Materials Science and Engineering, Rensselaer Polytechnic Institute在 rpi.edu 的电子邮件经过验证
