| GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration K Volz, A Beyer, W Witte, J Ohlmann, I Németh, B Kunert, W Stolz Journal of Crystal Growth 315 (1), 37-47, 2011 | 400 | 2011 |
| Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ... Applied Physics Letters 99 (7), 2011 | 182 | 2011 |
| A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode NW Rosemann, JP Eußner, A Beyer, SW Koch, K Volz, S Dehnen, ... Science 352 (6291), 1301-1304, 2016 | 152 | 2016 |
| GaP heteroepitaxy on Si (001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure A Beyer, J Ohlmann, S Liebich, H Heim, G Witte, W Stolz, K Volz Journal of Applied Physics 111 (8), 2012 | 118 | 2012 |
| Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors T You, N Du, S Slesazeck, T Mikolajick, G Li, D Bürger, I Skorupa, ... ACS applied materials & interfaces 6 (22), 19758-19765, 2014 | 94 | 2014 |
| The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni1–x–yCoxMny)O2 Cathode Materials S Ahmed, A Pokle, S Schweidler, A Beyer, M Bianchini, F Walther, ... ACS nano 13 (9), 10694-10704, 2019 | 89 | 2019 |
| In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy H Döscher, T Hannappel, B Kunert, A Beyer, K Volz, W Stolz Applied Physics Letters 93 (17), 2008 | 85 | 2008 |
| Direct growth of III–V/silicon triple-junction solar cells with 19.7% efficiency M Feifel, J Ohlmann, J Benick, M Hermle, J Belz, A Beyer, K Volz, ... IEEE Journal of Photovoltaics 8 (6), 1590-1595, 2018 | 71 | 2018 |
| MOVPE grown gallium phosphide–silicon heterojunction solar cells M Feifel, J Ohlmann, J Benick, T Rachow, S Janz, M Hermle, F Dimroth, ... IEEE Journal of Photovoltaics 7 (2), 502-507, 2017 | 70 | 2017 |
| Synthesis and characterization of colloidal fluorescent silver nanoclusters S Huang, C Pfeiffer, J Hollmann, S Friede, JJC Chen, A Beyer, B Haas, ... Langmuir 28 (24), 8915-8919, 2012 | 68 | 2012 |
| Influence of crystal polarity on crystal defects in GaP grown on exact Si (001) A Beyer, I Németh, S Liebich, J Ohlmann, W Stolz, K Volz Journal of Applied Physics 109 (8), 2011 | 66 | 2011 |
| STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens JO Oelerich, L Duschek, J Belz, A Beyer, SD Baranovskii, K Volz Ultramicroscopy 177, 91-96, 2017 | 61 | 2017 |
| Monitoring the thermally induced transition from sp3-hybridized into sp2-hybridized carbons DB Schüpfer, F Badaczewski, J Peilstöcker, JM Guerra-Castro, H Shim, ... Carbon 172, 214-227, 2021 | 56 | 2021 |
| Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material S Ahmed, M Bianchini, A Pokle, MS Munde, P Hartmann, T Brezesinski, ... Advanced Energy Materials 10 (25), 2001026, 2020 | 56 | 2020 |
| Atomic structure of (110) anti-phase boundaries in GaP on Si (001) A Beyer, B Haas, KI Gries, K Werner, M Luysberg, W Stolz, K Volz Applied Physics Letters 103 (3), 2013 | 46 | 2013 |
| Pyramidal structure formation at the interface between III/V semiconductors and silicon A Beyer, A Stegmüller, JO Oelerich, K Jandieri, K Werner, G Mette, ... Chemistry of Materials 28 (10), 3265-3275, 2016 | 44 | 2016 |
| Indirect in situ characterization of Si (1 0 0) substrates at the initial stage of III–V heteroepitaxy H Döscher, O Supplie, S Brückner, T Hannappel, A Beyer, J Ohlmann, ... Journal of Crystal Growth 315 (1), 16-21, 2011 | 44 | 2011 |
| Investigation of the microstructure of metallic droplets on Ga (AsBi)/GaAs E Sterzer, N Knaub, P Ludewig, R Straubinger, A Beyer, K Volz Journal of crystal growth 408, 71-77, 2014 | 43 | 2014 |
| Structural characteristics of gallium metal deposited on Si (0 0 1) by MOCVD K Werner, A Beyer, JO Oelerich, SD Baranovskii, W Stolz, K Volz Journal of crystal growth 405, 102-109, 2014 | 40 | 2014 |
| Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer L Desplanque, S El Kazzi, C Coinon, S Ziegler, B Kunert, A Beyer, K Volz, ... Applied Physics Letters 101 (14), 2012 | 37 | 2012 |
