受强制性开放获取政策约束的文章 - Panpan Li了解详情
无法在其他位置公开访问的文章：3 篇
Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting
J Kang, HJ Choi, F Ren, J Ao, H Li, Y Li, W Du, K Zhou, H Tan, D Huh, P Li, ...
Japanese journal of applied physics 58 (8), 081001, 2019
强制性开放获取政策： 国家自然科学基金委员会
Highly efficient InGaN green mini-size flip-chip light-emitting diodes with AlGaN insertion layer
P Li, Y Zhao, H Li, Z Li, Y Zhang, J Kang, M Liang, Z Liu, X Yi, G Wang
Nanotechnology 30 (9), 095203, 2019
强制性开放获取政策： 国家自然科学基金委员会
UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate
Y Zhang, H Li, L Liu, P Li, L Wang, X Yi, G Wang
Journal of Nanophotonics 12 (4), 043502-043502, 2018
强制性开放获取政策： 国家自然科学基金委员会
可在其他位置公开访问的文章：10 篇
Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD
PP Li, YB Zhao, HJ Li, JM Che, ZH Zhang, ZC Li, YY Zhang, LC Wang, ...
Optics Express 26 (25), 33108-33115, 2018
强制性开放获取政策： 国家自然科学基金委员会
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
H Li, P Li, J Kang, J Ding, J Ma, Y Zhang, X Yi, G Wang
Scientific Reports 6 (1), 35217, 2016
强制性开放获取政策： 国家自然科学基金委员会
High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization
Y Yao, H Li, M Wang, P Li, M Lam, M Iza, JS Speck, SP DenBaars, ...
Optics Express 31 (18), 28649-28657, 2023
强制性开放获取政策： US Department of Defense
Optically-pumped single-mode deep-ultraviolet microdisk lasers with AlGaN-based multiple quantum wells on Si substrate
Y Zhang, H Li, P Li, A Dehzangi, L Wang, X Yi, G Wang
IEEE Photonics Journal 9 (5), 1-8, 2017
强制性开放获取政策： 国家自然科学基金委员会
Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition
MS Wong, NC Palmquist, J Jiang, P Chan, C Lee, P Li, JH Kang, YH Baek, ...
Applied Physics Letters 119 (20), 2021
强制性开放获取政策： US National Science Foundation
High quantum efficiency and low droop of 400-nm InGaN near-ultraviolet light-emitting diodes through suppressed leakage current
P Li, H Li, L Wang, X Yi, G Wang
IEEE Journal of Quantum Electronics 51 (9), 1-5, 2015
强制性开放获取政策： 中国科学院
Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells
P Li, H Zhang, H Li, T Cohen, R Anderson, MS Wong, E Trageser, ...
Applied Physics Letters 121 (7), 2022
强制性开放获取政策： US Department of Energy, US Department of Defense
Toward ultra-low efficiency droop in C-plane polar InGaN light-emitting diodes by reducing carrier density with a wide InGaN last quantum well
Y Zhao, P Li
Applied Sciences 9 (15), 3004, 2019
强制性开放获取政策： 国家自然科学基金委员会
Effects of a reduced effective active region volume on wavelength-dependent efficiency droop of InGaN-based light-emitting diodes
P Li, Y Zhao, X Yi, H Li
Applied Sciences 8 (11), 2138, 2018
强制性开放获取政策： 国家自然科学基金委员会, Innovation Fund Denmark
Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion
J Kang, VQ Dang, H Li, S Moon, P Li, Y Kim, C Kim, J Choi, H Choi, Z Liu, ...
Nanotechnology 28 (4), 045401, 2016
强制性开放获取政策： 国家自然科学基金委员会
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