| Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm P Li, H Li, H Zhang, C Lynsky, M Iza, JS Speck, S Nakamura, ... Applied Physics Letters 119 (8), 2021 | 66 | 2021 |
| Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang, MS Wong, S Pinna, ... Nano Energy 67, 104236, 2020 | 65 | 2020 |
| Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact P Li, H Li, H Zhang, Y Yang, MS Wong, C Lynsky, M Iza, MJ Gordon, ... Applied Physics Letters 120 (12), 2022 | 59 | 2022 |
| Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer H Li, J Kang, P Li, J Ma, H Wang, M Liang, Z Li, J Li, X Yi, G Wang Applied Physics Letters 102 (1), 2013 | 57 | 2013 |
| Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template H Li, MS Wong, M Khoury, B Bonef, H Zhang, YC Chow, P Li, J Kearns, ... Optics Express 27 (17), 24154-24160, 2019 | 55 | 2019 |
| Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well H Li, P Li, J Kang, Z Li, Y Zhang, Z Li, J Li, X Yi, J Li, G Wang Applied Physics Express 6 (5), 052102, 2013 | 53 | 2013 |
| Phosphor-free, color-tunable monolithic InGaN light-emitting diodes H Li, P Li, J Kang, Z Li, Z Li, J Li, X Yi, G Wang Applied Physics Express 6 (10), 102103, 2013 | 51 | 2013 |
| Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD PP Li, YB Zhao, HJ Li, JM Che, ZH Zhang, ZC Li, YY Zhang, LC Wang, ... Optics Express 26 (25), 33108-33115, 2018 | 50 | 2018 |
| High-temperature electroluminescence properties of InGaN red 40× 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2% P Li, A David, H Li, H Zhang, C Lynsky, Y Yang, M Iza, JS Speck, ... Applied Physics Letters 119 (23), 2021 | 38 | 2021 |
| Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition P Li, H Zhang, H Li, M Iza, Y Yao, MS Wong, N Palmquist, JS Speck, ... Optics Express 28 (13), 18707-18712, 2020 | 38 | 2020 |
| Significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes with a peak external quantum efficiency of up to 6% P Li, H Li, Y Yao, N Lim, M Wong, M Iza, MJ Gordon, JS Speck, ... ACS Photonics 10 (6), 1899-1905, 2023 | 34 | 2023 |
| Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage P Li, H Zhang, H Li, Y Zhang, Y Yao, N Palmquist, M Iza, JS Speck, ... Semiconductor Science and Technology 35 (12), 125023, 2020 | 33 | 2020 |
| Progress of InGaN-based red micro-light emitting diodes P Li, H Li, MS Wong, P Chan, Y Yang, H Zhang, M Iza, JS Speck, ... Crystals 12 (4), 541, 2022 | 32 | 2022 |
| Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots H Li, P Li, J Kang, J Ding, J Ma, Y Zhang, X Yi, G Wang Scientific Reports 6 (1), 35217, 2016 | 28 | 2016 |
| Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization H Li, P Li, J Kang, Z Li, Y Zhang, M Liang, Z Li, J Li, X Yi, G Wang Applied Physics Express 6 (9), 092101, 2013 | 27 | 2013 |
| Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah, JS Speck, S Nakamura, ... Applied Physics Letters 118 (26), 2021 | 26 | 2021 |
| Demonstration of ultra-small 5× 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2% P Li, H Li, Y Yang, H Zhang, P Shapturenka, M Wong, C Lynsky, M Iza, ... Applied Physics Letters 120 (4), 2022 | 25 | 2022 |
| Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes P Li, H Li, Z Li, J Kang, X Yi, J Li, G Wang Journal of Applied Physics 117 (7), 2015 | 24 | 2015 |
| Low threading dislocation density in GaN films grown on patterned sapphire substrates M Liang, G Wang, H Li, Z Li, R Yao, B Wang, P Li, J Li, X Yi, J Wang, J Li Journal of Semiconductors 33 (11), 113002, 2012 | 22 | 2012 |
| Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes Y Yao, H Li, P Li, CJ Zollner, M Wang, M Iza, JS Speck, SP DenBaars, ... Applied Physics Express 15 (6), 064003, 2022 | 20 | 2022 |
Hongjian LiSolid State Lighting & Energy Electronics Center, UCSB在 ucsb.edu 的电子邮件经过验证
