| Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in AlxGa1-xN … SM Nawaz, MI Niass, Y Wang, Z Xing, F Wang, Y Liu Superlattices and Microstructures 145, 106643, 2020 | 35 | 2020 |
| Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers YL [1] Muhammad Nawaz Sharif, M. Ajmal Khan, Qamar. Wali, Ilkay Demir, Fang Wang Optics & Laser Technology 152, 2022 | 33 | 2022 |
| p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode MN Sharif, MI Niass, JJ Liou, F Wang, Y Liu Superlattices and Microstructures 158, 107022, 2021 | 26 | 2021 |
| The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode MN Sharif, MI Niass, JJ Liou, F Wang, Y Liu Semiconductor Science and Technology 36 (5), 055017, 2021 | 22 | 2021 |
| A contrivance of 277 nm DUV LD with B0. 313Ga0. 687N/B0. 40Ga0. 60N QWs and AlxGa1–xN heterojunction grown on AlN substrate MI Niass, MN Sharif, Y Wang, Z Lu, X Chen, Y Qu, Z Du, F Wang, Y Liu Journal of Semiconductors 40 (12), 122802, 2019 | 18 | 2019 |
| Proposing the n+-AlGaN tunnel junction for an efficient deep-ultraviolet light-emitting diode at 254 nm emission MN Sharif, MA Khan, Q Wali, P Zhang, F Wang, Y Liu Applied Optics 61 (31), 9186-9192, 2022 | 13 | 2022 |
| Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer MN Sharif, M Usman, MI Niass, JJ Liou, F Wang, Y Liu Nanotechnology 33 (7), 075205, 2021 | 13 | 2021 |
| Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED MN Sharif, MA Khan, Q Wali, K Ayub, M Rani, F Wang, Y Liu Optical and Quantum Electronics 55 (9), 785, 2023 | 12 | 2023 |
| Composition-graded quantum barriers improve performance in AlGaN-based deep ultraviolet laser diodes P Zhang, L Jia, A Zhang, MN Sharif, F Wang, JJ Liou, Y Liu Optical Engineering 61 (7), 076113-076113, 2022 | 10 | 2022 |
| Effects of the Stepped-Doped Lower Waveguide and a Doped p-Cladding Layer on AlGaN-Based Deep-Ultraviolet Laser Diodes SU Khan, SM Nawaz, MI Niass, F Wang, Y Liu Journal of Russian Laser Research 43 (3), 370-377, 2022 | 9 | 2022 |
| Effect of AlGaN quantum barrier thickness on electron-hole overlapping in deep-ultraviolet laser diode HU Rehman, A Aman, R Iqbal, MN Sharif, I Ahmad, JJ Liou, F Wang, Y Liu Optik 287, 171002, 2023 | 8 | 2023 |
| First-principle calculations to investigate electronic and optical properties of carbon-doped silicon MN Sharif, J Yang, X Zhang, Y Tang, G Yang, KF Wang Vacuum 219, 112714, 2024 | 7 | 2024 |
| Brief Outlook on Top Cell Absorber of Silicon‐Based Tandem Solar Cells MN Sharif, J Yang, X Zhang, Y Tang, KF Wang Solar RRL 7 (11), 2300156, 2023 | 6 | 2023 |
| Achieving zero efficiency droop in highly efficient N-polar AlGaN tunnel junction-based 254 nm DUV LED K Ayub, B Khan, Y Liu, MN Sharif, MA Khan, H Hirayama Optics & Laser Technology 180, 111567, 2025 | 4 | 2025 |
| Exploring Rare-Earth compound ErMn2Si2 for thermoelectric and photoelectrochemical applications using Density functional theory J Khan, Y Iqbal, F Rehman, J Alam, M Rahim, S Hussain, MN Sharif, ... Journal of Magnetism and Magnetic Materials 600, 172156, 2024 | 4 | 2024 |
| Advantages of AlGaN Tunnel Junction in N-Polar 284nm Ultraviolet-B Light Emitting Diode HU Rehman, K Ayub, MN Sharif, MA Khan, F Wang, Y Liu ECS Journal of Solid State Science and Technology, 2024 | 4 | 2024 |
| Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes MN Sharif, Q Wali, H ur Rehman, Z Xing, SU Khan, A Zhang, I Demir, ... Micro and nanostructures 165, 207208, 2022 | 4 | 2022 |
| Investigation of the Filter Amplifiers using the TVS Diode for ESD Protection Y Gao, J Wang, SM Nawaz, F Zhang, Y Liu, JJ Liou 2019 8th International Symposium on Next Generation Electronics (ISNE), 1-3, 2019 | 4 | 2019 |
| Recent advances in the synthesis of ZnO-based electrochemical sensors A Akhoondi, M Ahmad, MN Sharif, S Aziz, H Davardoost, Q Wali, ... Synthesis and Sintering 3 (4), 259-274, 2023 | 3 | 2023 |
| Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations MN Sharif, J Yang, X Zhang, Y Tang, G Yang, KF Wang Advanced Theory and Simulations 7 (6), 2400245, 2024 | 2 | 2024 |
İlkay DemirNanotechnology Engineering, Nanophotonics Research and Application Center, Cumhuriyet University在 cumhuriyet.edu.tr 的电子邮件经过验证
