| High performance dual core D-shape PCF-SPR sensor modeling employing gold coat MN Sakib, MB Hossain, KF Al-tabatabaie, IM Mehedi, MT Hasan, ... Results in Physics 15, 102788, 2019 | 128 | 2019 |
| Current collapse suppression by gate field-plate in AlGaN/GaN HEMTs MT Hasan, T Asano, H Tokuda, M Kuzuhara IEEE Electron Device Letters 34 (11), 1379-1381, 2013 | 116 | 2013 |
| Detection of small variations of ECG features using Wavelet AKMF Haque, MH Ali, MA Kiber, MT Hasan ARPN Journal of Engineering and applied Sciences 4 (6), 27-30, 2009 | 72 | 2009 |
| Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization MT Hasan, AG Bhuiyan, A Yamamoto Solid-State Electronics 52 (1), 134-139, 2008 | 33 | 2008 |
| LED Illumination for High-Quality High-Yield Crop Growth in Protected Cropping Environments MM Rahman, DL Field, SM Ahmed, MT Hasan, MK Basher, K Alameh Plants 10 (11), 2470, 2021 | 27 | 2021 |
| Numerical analysis and design of photonic crystal fiber based surface plasmon resonance biosensor MB Hossain, MS Hossain, M Moznuzzaman, MA Hossain, ... Journal of Sensor Technology 9 (2), 27-34, 2019 | 27 | 2019 |
| Tunable Photocatalytic Properties of Planar GaN/GeC Hetero-Bilayer: Production of H₂ Fuel MSH Khan, MR Islam, MS Islam, IM Mehedi, MT Hasan IEEE Access 8, 209030-209042, 2020 | 19 | 2020 |
| Strain-dependent electronic and optical properties of boron-phosphide and germanium-carbide hetero-bilayer: A first-principles study MS Hasan Khan, MR Islam, MT Hasan AIP Advances 10 (8), 085128, 2020 | 17 | 2020 |
| Growth temperature dependent critical thickness for phase separation in thick (~ 1μm) In x Ga 1− x N (x= 0.2–0.4) A Yamamoto, TM Hasan, K Kodama, N Shigekawa, M Kuzuhara Journal of Crystal Growth 419, 64-68, 2015 | 17 | 2015 |
| Phase separation of thick (∼ 1 µm) InxGa1− xN (x∼ 0.3) grown on AlN/Si (111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN A Yamamoto, MT Hasan, A Mihara, N Narita, N Shigekawa, M Kuzuhara Applied Physics Express 7 (3), 035502, 2014 | 17 | 2014 |
| Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation MS Islam, MS Hasan, MR Islam, A Iskanderani, IM Mehedi, MT Hasan IEEE Access 9, 117649-117659, 2021 | 16 | 2021 |
| Real-Time Non-Intrusive Electrical Load Classification Over IoT Using Machine Learning MT Ahammed, MM Hasan, MS Arefin, MR Islam, MA Rahman, E Hossain, ... IEEE Access 9, 115053-115067, 2021 | 16 | 2021 |
| Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures T Hasan, H Tokuda, M Kuzuhara Applied physics letters 99 (13), 2011 | 14 | 2011 |
| Design and performance of inxga1-xn-based mj solar cells MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008 | 14 | 2008 |
| Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ... IEICE transactions on electronics 95 (2), 255-261, 2012 | 13 | 2012 |
| Mechanism and Suppression of Current Collapse in AlGaN/GaN High Electron Mobility Transistors MT Hasan University of Fukui, 2013 | 11 | 2013 |
| 2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ... physica status solidi c 7 (7‐8), 1997-2000, 2010 | 11 | 2010 |
| Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study P Murugapandiyan, D Nirmal, MT Hasan, A Varghese, J Ajayan, ... Materials Science and Engineering: B 273, 115449, 2021 | 10 | 2021 |
| Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs P Murugapandiyan, MT Hasan, V Rajya Lakshmi, M Wasim, J Ajayan, ... International Journal of Electronics 108 (8), 1273-1287, 2021 | 10 | 2021 |
| GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function IM Mehedi, AM Alshareef, MR Islam, MT Hasan Journal of Computational Electronics 17, 663-669, 2018 | 10 | 2018 |
Akio YamamotoUniversity of Fukui在 u-fukui.ac.jp 的电子邮件经过验证
