| Pattern recognition using carbon nanotube synaptic transistors with an adjustable weight update protocol S Kim, B Choi, M Lim, J Yoon, J Lee, HD Kim, SJ Choi ACS nano 11 (3), 2814-2822, 2017 | 300 | 2017 |
| Carbon nanotube synaptic transistor network for pattern recognition S Kim, J Yoon, HD Kim, SJ Choi ACS applied materials & interfaces 7 (45), 25479-25486, 2015 | 137 | 2015 |
| Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices HD Kim, HM An, EB Lee, TG Kim IEEE transactions on electron devices 58 (10), 3566-3573, 2011 | 123 | 2011 |
| Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method HD Kim, MJ Yun, JH Lee, KH Kim, TG Kim Scientific reports 4 (1), 4614, 2014 | 108 | 2014 |
| Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells HD Kim, HM An, KC Kim, Y Seo, KH Nam, HB Chung, EB Lee, TG Kim Semiconductor Science and Technology 25 (6), 065002, 2010 | 94 | 2010 |
| Impact of synaptic device variations on pattern recognition accuracy in a hardware neural network S Kim, M Lim, Y Kim, HD Kim, SJ Choi Scientific reports 8 (1), 2638, 2018 | 85 | 2018 |
| Transparent resistive switching memory using ITO/AlN/ITO capacitors HD Kim, HM An, Y Seo, TG Kim IEEE Electron Device Letters 32 (8), 1125-1127, 2011 | 76 | 2011 |
| ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes JH Lee, KY Woo, KH Kim, HD Kim, TG Kim Optics letters 38 (23), 5055-5058, 2013 | 63 | 2013 |
| Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition G Niu, HD Kim, R Roelofs, E Perez, MA Schubert, P Zaumseil, I Costina, ... Scientific reports 6 (1), 28155, 2016 | 61 | 2016 |
| Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films SM Hong, HD Kim, HM An, TG Kim IEEE electron device letters 34 (9), 1181-1183, 2013 | 58 | 2013 |
| Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices HD Kim, M Yun, S Kim Journal of Alloys and Compounds 651, 340-343, 2015 | 51 | 2015 |
| Unipolar resistive switching phenomena in fully transparent SiN-based memory cells HD Kim, HM An, SM Hong, TG Kim Semiconductor Science and Technology 27 (12), 125020, 2012 | 48 | 2012 |
| Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells HD Kim, HM An, TG Kim IEEE transactions on electron devices 59 (9), 2302-2307, 2012 | 48 | 2012 |
| Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays HD Kim, MJ Yun, SM Hong, TG Kim Nanotechnology 25 (12), 125201, 2014 | 43 | 2014 |
| A Universal Method of Producing Transparent Electrodes Using Wide‐Bandgap Materials HD Kim, HM An, KH Kim, SJ Kim, CS Kim, J Cho, EF Schubert, TG Kim Advanced Functional Materials 24 (11), 1575-1581, 2014 | 39 | 2014 |
| Forming‐free Si N‐based resistive switching memory prepared by RF sputtering HD Kim, HM An, SM Hong, TG Kim physica status solidi (a) 210 (9), 1822-1827, 2013 | 39 | 2013 |
| Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment HD Kim, HM An, TG Kim Journal of Applied Physics 109 (1), 2011 | 39 | 2011 |
| Numerical study of read scheme in one-selector one-resistor crossbar array S Kim, HD Kim, SJ Choi Solid-State Electronics 114, 80-86, 2015 | 37 | 2015 |
| Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates S Park, JH Lee, HD Kim, SM Hong, HM An, TG Kim physica status solidi (RRL)–Rapid Research Letters 7 (7), 493-496, 2013 | 34 | 2013 |
| Parallel weight update protocol for a carbon nanotube synaptic transistor array for accelerating neuromorphic computing S Kim, Y Lee, HD Kim, SJ Choi Nanoscale 12 (3), 2040-2046, 2020 | 32 | 2020 |
Doowon LeeDepartment of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University在 sejong.ac.kr 的电子邮件经过验证
