| High-performance silicon photoanodes passivated with ultrathin nickel films for water oxidation MJ Kenney, M Gong, Y Li, JZ Wu, J Feng, M Lanza, H Dai Science 342 (6160), 836-840, 2013 | 715 | 2013 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 582 | 2019 |
| Electronic synapses made of layered two-dimensional materials Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ... Nature Electronics 1 (8), 458-465, 2018 | 553 | 2018 |
| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 358 | 2022 |
| Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature communications 11 (1), 3385, 2020 | 320 | 2020 |
| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 302 | 2017 |
| A review on resistive switching in high-k dielectrics: A nanoscale point of view using conductive atomic force microscope M Lanza Materials 7 (3), 2155-2182, 2014 | 296 | 2014 |
| Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ... Nature Electronics 3 (10), 638-645, 2020 | 288 | 2020 |
| Memristive technologies for data storage, computation, encryption, and radio-frequency communication M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ... Science 376 (6597), eabj9979, 2022 | 286 | 2022 |
| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 233 | 2021 |
| Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures M Lanza, K Zhang, M Porti, M Nafría, ZY Shen, LF Liu, JF Kang, D Gilmer, ... Applied Physics Letters 100 (12), 2012 | 231 | 2012 |
| Graphene and related materials for resistive random access memories F Hui, E Grustan‐Gutierrez, S Long, Q Liu, AK Ott, AC Ferrari, M Lanza Advanced Electronic Materials 3 (8), 1600195, 2017 | 214 | 2017 |
| Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich Applied Physics Letters 101 (19), 2012 | 204 | 2012 |
| The development of integrated circuits based on two-dimensional materials K Zhu, C Wen, AA Aljarb, F Xue, X Xu, V Tung, X Zhang, HN Alshareef, ... Nature Electronics 4 (11), 775-785, 2021 | 179 | 2021 |
| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 175 | 2020 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 156 | 2021 |
| A review on principles and applications of scanning thermal microscopy (SThM) Y Zhang, W Zhu, F Hui, M Lanza, T Borca‐Tasciuc, M Muñoz Rojo Advanced functional materials 30 (18), 1900892, 2020 | 151 | 2020 |
| Conductive atomic force microscopy: applications in nanomaterials M Lanza John Wiley & Sons, 2017 | 148 | 2017 |
| Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles Y Shi, Y Ji, H Sun, F Hui, J Hu, Y Wu, J Fang, H Lin, J Wang, H Duan, ... Scientific reports 5 (1), 11232, 2015 | 134 | 2015 |
| Grain boundary mediated leakage current in polycrystalline HfO2 films K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker Microelectronic Engineering 88 (7), 1272-1275, 2011 | 126 | 2011 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE在 iue.tuwien.ac.at 的电子邮件经过验证
