Charge transport in non-polar and semi-polar III-V nitride heterostructures A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena Semiconductor Science and Technology 27 (2), 024018, 2012 | 45 | 2012 |
On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors RK Jana, GL Snider, D Jena physica status solidi (c) 10 (11), 1469-1472, 2013 | 36 | 2013 |
Stark-effect scattering in rough quantum wells RK Jana, D Jena Applied Physics Letters 99 (1), 2011 | 20 | 2011 |
Sub-60 mV/decade steep transistors with compliant piezoelectric gate barriers RK Jana, A Ajoy, G Snider, D Jena 2014 IEEE International Electron Devices Meeting, 13.6. 1-13.6. 4, 2014 | 13 | 2014 |
Energy-efficient clocking based on resonant switching for low-power computation RK Jana, GL Snider, D Jena IEEE Transactions on Circuits and Systems I: Regular Papers 61 (5), 1400-1408, 2014 | 13 | 2014 |
Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region Z Hu, R Jana, M Qi, S Ganguly, B Song, E Kohn, D Jena, HG Xing 72nd Device Research Conference, 27-28, 2014 | 9 | 2014 |
Transistor switches using active piezoelectric gate barriers RK Jana, A Ajoy, G Snider, D Jena IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 8 | 2015 |
Resonant clocking circuits for reversible computation RK Jana, GL Snider, D Jena 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 1-6, 2012 | 6 | 2012 |
A non-hysteretic sub-60-mV/decade subthreshold slope and ON-current boosts in electrostrictive-piezoelectric transistors RK Jana IEEE Electron Device Letters 38 (12), 1759-1762, 2017 | 5 | 2017 |
Electrostrictive tunable capacitors and high-performance 2D crystal transistors for energy-efficient applications RK Jana, GL Snider IEEE Electron Device Letters 37 (3), 341-344, 2016 | 5 | 2016 |
Sub-Boltzmann transistors with piezoelectric gate barriers R Jana, GL Snider, D Jena 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2, 2013 | 4 | 2013 |
A surface-potential based compact model for GaN HEMTs incorporating polarization charges R Jana, D Jena 70th Device Research Conference, 147-148, 2012 | 2 | 2012 |
Low-power electronic devices for energy-efficient applications RK Jana University of Notre Dame, 2015 | | 2015 |
Dipoles in III-V MOSFETs: Scattering and Threshold shifts R Jana, D Jena APS March Meeting Abstracts 2014, J45. 014, 2014 | | 2014 |
Interband absorption in single layer hexagonal boron nitride A Konar, R Jana, T Fang, G Li, W O'Brien, D Jena arXiv preprint arXiv:1109.5145, 2011 | | 2011 |
Current PostDoctoral Scholars octoral Scholars N Ma, A Ajoy, G Li, S Ganguly, P Zhao, R Jana, F Faria, M Islam, A Verma, ... | | |
2015 Index IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Vol. N Agrawal, C Ahn, A Ajoy, J Appenzeller, JA Bain, GI Bourianoff, ... | | |