Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations K Yim, Y Yong, J Lee, K Lee, HH Nahm, J Yoo, C Lee, C Seong Hwang, ... NPG Asia Materials 7 (6), e190-e190, 2015 | 232 | 2015 |
Instability of amorphous oxide semiconductors via carrier‐mediated structural transition between disorder and peroxide state HH Nahm, YS Kim, DH Kim physica status solidi (b), 2012 | 124 | 2012 |
Hydrogen Bistability as the Origin of Photo‐Bias‐Thermal Instabilities in Amorphous Oxide Semiconductors Y Kang, BD Ahn, JH Song, YG Mo, HH Nahm, S Han, JK Jeong Advanced Electronic Materials 1 (7), 1400006, 2015 | 93 | 2015 |
First-principles study of microscopic properties of the Nb antisite in : Comparison to phenomenological polaron theory HH Nahm, CH Park Physical Review B—Condensed Matter and Materials Physics 78 (18), 184108, 2008 | 85 | 2008 |
Property database for single-element doping in ZnO obtained by automated first-principles calculations K Yim, J Lee, D Lee, M Lee, E Cho, HS Lee, HH Nahm, S Han Scientific reports 7 (1), 40907, 2017 | 77 | 2017 |
Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors JY Noh, H Kim, HH Nahm, YS Kim, D Hwan Kim, BD Ahn, JH Lim, ... Journal of Applied Physics 113 (18), 2013 | 76 | 2013 |
Spontaneous decays of magneto-elastic excitations in non-collinear antiferromagnet (Y,Lu)MnO3 J Oh, MD Le, HH Nahm, H Sim, J Jeong, TG Perring, H Woo, K Nakajima, ... Nature communications 7 (1), 13146, 2016 | 69 | 2016 |
Bistability of hydrogen in ZnO: Origin of doping limit and persistent photoconductivity HH Nahm, CH Park, YS Kim Scientific Reports 4 (1), 4124, 2014 | 69 | 2014 |
Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness YJ Shin, Y Kim, SJ Kang, HH Nahm, P Murugavel, JR Kim, MR Cho, ... Advanced Materials 29 (19), 1602795, 2017 | 65 | 2017 |
Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor YC Cho, SJ Kim, S Lee, SJ Kim, CR Cho, HH Nahm, CH Park, IK Jeong, ... Applied Physics Letters 95 (17), 172514-172514-3, 2009 | 61 | 2009 |
Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4 HH Nahm, YS Kim NPG Asia Materials 6, e143, 2014 | 42 | 2014 |
Light-induced peroxide formation in ZnO: Origin of persistent photoconductivity Y Kang, HH Nahm, S Han Scientific reports 6 (1), 35148, 2016 | 40 | 2016 |
Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO3 Thin Films S Ning, SC Huberman, Z Ding, HH Nahm, YH Kim, HS Kim, G Chen, ... Advanced Materials 31 (43), 1903738, 2019 | 38 | 2019 |
GW calculations on post-transition-metal oxides Y Kang, G Kang, HH Nahm, SH Cho, YS Park, S Han Physical Review B 89 (16), 165130, 2014 | 38 | 2014 |
Intrinsic nature of visible-light absorption in amorphous semiconducting oxides Y Kang, H Song, HH Nahm, SH Jeon, Y Cho, H S. APL Materials 2, 032108, 2014 | 29 | 2014 |
Microscopic structure of hydrogen impurity in LiNbO3 HH Nahm, CH Park Applied Physics Letters 78 (24), 3812-3814, 2001 | 29 | 2001 |
Electronic structures of oxygen-deficient Ta2O5 Y Yang, HH Nahm, O Sugino, T Ohno1 AIP Advances 3, 042101, 2013 | 26 | 2013 |
The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties J Park, HJ Jeong, HM Lee, HH Nahm, JS Park Scientific reports 7, 2017 | 25 | 2017 |
Harnessing the topotactic transition in oxide heterostructures for fast and high-efficiency electrochromic applications JS Lim, J Lee, BJ Lee, YJ Kim, HS Park, J Suh, HH Nahm, SW Kim, ... Science advances 6 (41), eabb8553, 2020 | 20 | 2020 |
Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface YJ Shin, L Wang, Y Kim, HH Nahm, D Lee, JR Kim, SM Yang, JG Yoon, ... ACS Appl. Mater. Interfaces, 2017 | 19 | 2017 |