| Sub-60mV-swing negative-capacitance FinFET without hysteresis KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ... 2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015 | 359 | 2015 |
| Physical thickness 1. x nm ferroelectric HfZrOx negative capacitance FETs MH Lee, ST Fan, CH Tang, PG Chen, YC Chou, HH Chen, JY Kuo, MJ Xie, ... 2016 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2016 | 192 | 2016 |
| Combinatorial Approach to the Development of a Single Mass YVO4:Bi3+,Eu3+ Phosphor with Red and Green Dual Colors for High Color Rendering White Light … L Chen, KJ Chen, CC Lin, CI Chu, SF Hu, MH Lee, RS Liu Journal of Combinatorial Chemistry 12 (4), 587-594, 2010 | 159 | 2010 |
| Identification of thioridazine, an antipsychotic drug, as an antiglioblastoma and anticancer stem cell agent using public gene expression data HW Cheng, YH Liang, YL Kuo, CP Chuu, CY Lin, MH Lee, ATH Wu, ... Cell death & disease 6 (5), e1753-e1753, 2015 | 158 | 2015 |
| Steep slope and near non-hysteresis of FETs with antiferroelectric-like HfZrO for low-power electronics MH Lee, YT Wei, KY Chu, JJ Huang, CW Chen, CC Cheng, MJ Chen, ... IEEE Electron Device Letters 36 (4), 294-296, 2015 | 156 | 2015 |
| Prospects for ferroelectric HfZrOx FETs with experimentally CET= 0.98 nm, SSfor= 42mV/dec, SSrev= 28mV/dec, switch-off< 0.2 V, and hysteresis-free strategies MH Lee, PG Chen, C Liu, KY Chu, CC Cheng, MJ Xie, SN Liu, JW Lee, ... 2015 IEEE international electron devices meeting (IEDM), 22.5. 1-22.5. 4, 2015 | 151 | 2015 |
| Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes CW Liu, MH Lee, MJ Chen, IC Lin, CF Lin Applied Physics Letters 76 (12), 1516-1518, 2000 | 106 | 2000 |
| Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications KT Chen, HY Chen, CY Liao, GY Siang, C Lo, MH Liao, KS Li, ST Chang, ... IEEE Electron Device Letters 40 (3), 399-402, 2019 | 89 | 2019 |
| A novel photodetector using MOS tunneling structures CW Liu, WT Liu, MH Lee, WS Kuo, BC Hsu IEEE Electron Device Letters 21 (6), 307-309, 2000 | 85 | 2000 |
| Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors MH Lee, YT Wei, C Liu, JJ Huang, M Tang, YL Chueh, KY Chu, MJ Chen, ... IEEE Journal of the Electron Devices Society 3 (4), 377-381, 2015 | 69 | 2015 |
| Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors YJ Lee, ZP Yang, PG Chen, YA Hsieh, YC Yao, MH Liao, MH Lee, ... Optics express 22 (106), A1589-A1595, 2014 | 68 | 2014 |
| Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification MH Lee, JC Lin, YT Wei, CW Chen, WH Tu, HK Zhuang, M Tang 2013 IEEE International Electron Devices Meeting, 4.5. 1-4.5. 4, 2013 | 68 | 2013 |
| Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs WC Hua, MH Lee, PS Chen, S Maikap, CW Liu, KM Chen IEEE electron device letters 25 (10), 693-695, 2004 | 64 | 2004 |
| Electron mobility enhancement using ultrathin pure Ge on Si substrate CC Yeo, BJ Cho, F Gao, SJ Lee, MH Lee, CY Yu, CW Liu, LJ Tang, ... IEEE electron device letters 26 (10), 761-763, 2005 | 63 | 2005 |
| Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory CY Liao, KY Hsiang, FC Hsieh, SH Chiang, SH Chang, JH Liu, CF Lou, ... IEEE Electron Device Letters 42 (4), 617-620, 2021 | 59 | 2021 |
| Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance YC Chiu, CH Cheng, CY Chang, MH Lee, HH Hsu, SS Yen 2015 Symposium on VLSI Technology (VLSI Technology), T184-T185, 2015 | 57 | 2015 |
| Coherent and polarized random laser emissions from colloidal CdSe/ZnS quantum dots plasmonically coupled to ellipsoidal Ag nanoparticles YC Yao, ZP Yang, JM Hwang, HC Su, JY Haung, TN Lin, JL Shen, ... Advanced Optical Materials 5 (3), 1600746, 2017 | 55 | 2017 |
| Package-strain-enhanced device and circuit performance S Maikap, MH Liao, F Yuan, MH Lee, CF Huang, ST Chang, CW Liu IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 55 | 2004 |
| Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on MH Lee, YT Wei, JC Lin, CW Chen, WH Tu, M Tang AIP Advances 4 (10), 2014 | 54 | 2014 |
| Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate YJ Lee, MH Lee, CM Cheng, CH Yang Applied Physics Letters 98 (26), 2011 | 51 | 2011 |
