| Synthesis of graphene on silicon carbide substrates at low temperature ZY Juang, CY Wu, CW Lo, WY Chen, CF Huang, JC Hwang, FR Chen, ... Carbon 47 (8), 2026-2031, 2009 | 259 | 2009 |
| Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs H Huang, YC Liang, GS Samudra, TF Chang, CF Huang IEEE Transactions on Power Electronics 29 (5), 2164-2173, 2013 | 123 | 2013 |
| High current gain 4H-SiC NPN bipolar junction transistors CF Huang, JA Cooper IEEE Electron Device Letters 24 (6), 396-398, 2003 | 65 | 2003 |
| Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments F Zhao, MM Islam, CF Huang Materials Letters 65 (3), 409-412, 2011 | 64 | 2011 |
| 6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack YH Wang, YC Liang, GS Samudra, H Huang, BJ Huang, SH Huang, ... IEEE Electron Device Letters 36 (4), 381-383, 2015 | 52 | 2015 |
| 4H-SiC npn bipolar junction transistors with BV/sub CEO/> 3,200 V CF Huang, JA Cooper Proceedings of the 14th international symposium on power semiconductor …, 2002 | 47 | 2002 |
| 0.18 um BCD technology with best-in-class LDMOS from 6 V to 45 V TY Huang, WY Liao, CY Yang, CH Huang, WCV Yeh, CF Huang, KH Lo, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 45 | 2014 |
| Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs TF Chang, TC Hsiao, CF Huang, WH Kuo, SF Lin, GS Samudra, YC Liang IEEE Transactions on Electron Devices 62 (2), 339-345, 2014 | 43 | 2014 |
| Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics YH Wang, YC Liang, GS Samudra, TF Chang, CF Huang, L Yuan, GQ Lo Semiconductor Science and Technology 28 (12), 125010, 2013 | 40 | 2013 |
| High-Performance 1-GaN n-MOSFET With MgO/MgO–Stacked Gate Dielectrics KT Lee, CF Huang, J Gong, CT Lee Ieee Electron Device Letters 32 (3), 306-308, 2011 | 29 | 2011 |
| Power microelectronics: device and process technologies YC Liang, GS Samudra, CF Huang World Scientific, 2017 | 28* | 2017 |
| Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode TF Chang, CF Huang, TY Yang, CW Chiu, TY Huang, KY Lee, F Zhao Solid-State Electronics 105, 12-15, 2015 | 28 | 2015 |
| Demonstration of Lateral IGBTs in 4H-SiC KW Chu, WS Lee, CY Cheng, CF Huang, F Zhao, LS Lee, YS Chen, ... IEEE Electron Device Letters 34 (2), 286-288, 2013 | 28 | 2013 |
| Design and fabrication of 4H–SiC lateral high-voltage devices on a semi-insulating substrate WS Lee, KW Chu, CF Huang, LS Lee, MJ Tsai, KY Lee, F Zhao IEEE Transactions on Electron Devices 59 (3), 754-760, 2011 | 28 | 2011 |
| Demonstration of 3500-V 4H-SiC Lateral MOSFETs WS Lee, CW Lin, MH Yang, CF Huang, J Gong, Z Feng IEEE Electron Device Letters 32 (3), 360-362, 2011 | 27 | 2011 |
| A 700-V device in high-voltage power ICs with low on-state resistance and enhanced SOA FJ Yang, J Gong, RY Su, KH Huo, CL Tsai, CC Cheng, RH Liou, HC Tuan, ... IEEE Transactions on Electron Devices 60 (9), 2847-2853, 2013 | 26 | 2013 |
| 0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs HL Chou, PC Su, JCW Ng, PL Wang, HT Lu, CJ Lee, WJ Syue, SY Yang, ... 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 26 | 2012 |
| Electrical characteristics of Al2O3/TiO2/Al2O3 nanolaminate MOS capacitor on p-GaN with post metallization annealing and (NH4) 2SX treatments KT Lee, CF Huang, J Gong, BH Liou IEEE electron device letters 30 (9), 907-909, 2009 | 26 | 2009 |
| Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge CF Huang, HC Hsu, KW Chu, LH Lee, MJ Tsai, KY Lee, F Zhao IEEE Transactions on Electron Devices 62 (2), 354-358, 2014 | 24 | 2014 |
| Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current K Ren, YC Liang, CF Huang IEEE Transactions on Electron Devices 65 (4), 1348-1354, 2018 | 23 | 2018 |
