受强制性开放获取政策约束的文章 - Tarek Ali了解详情
无法在其他位置公开访问的文章：10 篇
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ...
Advanced Functional Materials 32 (27), 2201737, 2022
强制性开放获取政策： European Commission
Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications
A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ...
IEEE Transactions on Electron Devices 69 (2), 808-815, 2021
强制性开放获取政策： European Commission
Impact of stack structure control and ferroelectric material optimization in novel laminate HSO and HZO MFMIS FeFET
T Ali, K Mertens, R Olivo, D Lehninger, M Lederer, F Müller, M Rudolph, ...
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
强制性开放获取政策： European Commission
Influence of microstructure on the variability and current percolation paths in ferroelectric hafnium oxide based neuromorphic FeFET synapses
M Lederer, F Muller, A Varanasi, R Olivo, K Mertens, D Lehninger, ...
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021
强制性开放获取政策： European Commission
Impact of the ferroelectric and interface layer optimization in an MFIS HZO based ferroelectric tunnel junction for neuromorphic based synaptic storage
T Ali, A Sünbül, K Mertens, R Revello, M Lederer, D Lehninger, F Müller, ...
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021
强制性开放获取政策： European Commission
Multi-level operation of ferroelectric FET memory arrays for compute-in-memory applications
F Müller, S De, M Lederer, R Hoffmann, R Olivo, T Kämpfe, K Seidel, T Ali, ...
2023 IEEE International Memory Workshop (IMW), 1-4, 2023
强制性开放获取政策： European Commission
Microstructural implications for neuromorphic synapses based on ferroelectric hafnium oxide
F Muller, M Lederer, R Olivo, A Reck, T Ali, K Seidel, T Kämpfe
2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF), 1-4, 2021
强制性开放获取政策： European Commission
Endurance study of silicon-doped hafnium oxide (HSO) and zirconium-doped hafnium oxide (HZO)-based FeFET memory
P Duhan, T Ali, P Khedgarkar, K Kühnel, M Czernohorsky, M Rudolph, ...
IEEE Transactions on Electron Devices, 2023
强制性开放获取政策： European Commission
Impact of temperature on reliability of mfis hzo-based ferroelectric tunnel junctions
A Sünbül, T Ali, R Hoffmann, R Revello, Y Raffel, P Duhan, D Lehninger, ...
2022 IEEE International Reliability Physics Symposium (IRPS), P11-1-P11-5, 2022
强制性开放获取政策： European Commission
Integration of hafnium oxide-based ferroelectric data storage devices into BEoL for low-power applications
K Seidel, D Lehninger, R Olivo, T Ali, M Lederer, T Kaempfe, K Mertens, ...
MikroSystemTechnik Congress 2021; Congress, 1-4, 2021
强制性开放获取政策： Federal Ministry of Education and Research, Germany
可在其他位置公开访问的文章：22 篇
Back‐End‐of‐Line Compatible Low Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ...
physica status solidi (a), 2020
强制性开放获取政策： European Commission
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD
M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ...
Applied Physics Letters 115 (22), 2019
强制性开放获取政策： European Commission
Ultra-Low Power Flexible Precision FeFET Based Analog In-Memory Computing
T Soliman, F Müller, T Kirchner, T Hoffmann, H Ganem, E Karimov, T Ali, ...
强制性开放获取政策： European Commission
Ferroelectric field effect transistors as a synapse for neuromorphic application
M Lederer, T Kämpfe, T Ali, F Müller, R Olivo, R Hoffmann, N Laleni, ...
IEEE Transactions on Electron Devices 68 (5), 2295-2300, 2021
强制性开放获取政策： European Commission
Structural and electrical comparison of Si and Zr doped hafnium oxide thin films and integrated FeFETs utilizing transmission Kikuchi diffraction
M Lederer, T Kämpfe, N Vogel, D Utess, B Volkmann, T Ali, R Olivo, ...
Nanomaterials 10 (2), 384, 2020
强制性开放获取政策： European Commission
A Fully Integrated Ferroelectric Thin‐Film‐Transistor–Influence of Device Scaling on Threshold Voltage Compensation in Displays
D Lehninger, M Ellinger, T Ali, S Li, K Mertens, M Lederer, R Olivio, ...
Advanced Electronic Materials, 2100082, 2021
强制性开放获取政策： German Research Foundation, Fraunhofer-Gesellschaft
Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications
S De, F Müller, HH Le, M Lederer, Y Raffel, T Ali, D Lu, T Kämpfe
IEEE Journal of the Electron Devices Society 10, 637-641, 2022
强制性开放获取政策： European Commission
Review on the microstructure of ferroelectric hafnium oxides
M Lederer, D Lehninger, T Ali, T Kämpfe
physica status solidi (RRL)–Rapid Research Letters 16 (10), 2200168, 2022
强制性开放获取政策： European Commission
Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability
D Lehninger, A Prabhu, A Sünbül, T Ali, F Schöne, T Kämpfe, ...
Advanced Physics Research 2 (9), 2200108, 2023
强制性开放获取政策： European Commission
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer
K Seidel, D Lehninger, R Hoffmann, T Ali, M Lederer, R Revello, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
强制性开放获取政策： European Commission
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