| Effect of IGZO thin films fabricated by Pulsed-DC and RF sputtering on TFT characteristics J Kim, J Park, G Yoon, A Khushabu, JS Kim, S Pae, EC Cho, J Yi Materials Science in Semiconductor Processing 120, 105264, 2020 | 40 | 2020 |
| HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment KS Agrawal, VS Patil, AG Khairnar, AM Mahajan Applied Surface Science 364, 747-751, 2016 | 21 | 2016 |
| Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge (100) prepared by PEALD VS Patil, KS Agrawal, AG Khairnar, BJ Thibeault, AM Mahajan Materials Science in Semiconductor Processing 56, 277-281, 2016 | 19 | 2016 |
| XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films V Patil, K Agrawal, V Barhate, S Patil, A Mahajan Semiconductor Science and Technology 34 (3), 034004, 2019 | 16 | 2019 |
| Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors KS Agrawal, VS Patil, AG Khairnar, AM Mahajan Journal of Materials Science: Materials in Electronics 28, 12503-12508, 2017 | 13 | 2017 |
| Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties VN Barhate, KS Agrawal, VS Patil, AM Mahajan Rare Metals 40 (7), 1835-1843, 2021 | 11 | 2021 |
| The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors SR Patil, VN Barhate, VS Patil, KS Agrawal, AM Mahajan Journal of Materials Science: Materials in Electronics 33 (14), 11227-11235, 2022 | 10 | 2022 |
| Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system V Barhate, K Agrawal, V Patil, S Patil, A Mahajan International Journal of Modern Physics B 32 (19), 1840074, 2018 | 10 | 2018 |
| Improved optical performance of hydrophobic silica nanoparticles as antireflection coating on glass and its electrical performance for photovoltaic module applications MA Zahid, KS Agrawal, MQ Khokhar, YH Cho, J Yi Optical Engineering 60 (5), 057101-057101, 2021 | 8 | 2021 |
| Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study KS Agrawal, VN Barhate, VS Patil, LS Patil, AM Mahajan Applied Physics A 126, 1-10, 2020 | 8 | 2020 |
| Analysis of solder joint degradation and output power drop in silicon photovoltaic modules for reliability improvement M Rabelo, MA Zahid, K Agrawal, KS Kim, EC Cho, J Yi Microelectronics Reliability 127, 114399, 2021 | 7 | 2021 |
| Analysis of Negative Bias Illumination Stress Induced Effect on LTPS and a-IGZO TFT JY Khushabu Agrawal, Vilas Patil, Eun‑Chel Cho ECS journal of solid state science and technology 9 (10), 106005, 2020 | 7 | 2020 |
| Optimization of MIS type non-volatile memory device with Al-doped HfO2 as charge trapping layer G Yoon, T Kim, K Agrawal, J Kim, J Park, HH Kim, EC Cho, J Yi ECS Journal of Solid State Science and Technology 9 (7), 075004, 2020 | 7 | 2020 |
| Atomic layer deposited HfO2 ultra-thin films on different crystallographic orientation Ge for CMOS applications KS Agrawal, VS Patil, AM Mahajan Thin Solid Films 654, 30-37, 2018 | 7 | 2018 |
| High mobility field-effect transistors based on MoS2 crystals grown by the flux method V Patil, J Kim, K Agrawal, T Park, J Yi, N Aoki, K Watanabe, T Taniguchi, ... Nanotechnology 32 (32), 325603, 2021 | 5 | 2021 |
| Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer VN Barhate, KS Agrawal, VS Patil, SR Patil, AM Mahajan Materials Science in Semiconductor Processing 117, 105161, 2020 | 5 | 2020 |
| Improving Retention Properties of ALD-AlxOy Charge Trapping Layer for Non-Volatile Memory Application K Agrawal, G Yoon, J Kim, G Chavan, J Kim, J Park, PD Phong, EC Cho, ... ECS Journal of Solid State Science and Technology 9 (4), 043002, 2020 | 4 | 2020 |
| Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface VS Patil, KS Agrawal, AG Khairnar, BJ Thibeault, AM Mahajan Materials Research Bulletin 87, 208-213, 2017 | 4 | 2017 |
| Investigation of Asymmetric Degradation in Electrical properties of a-InGaZnO Thin Film Transistor Arrays as a Function of Channel Width and Length Aspect Ratio KAVPGTCGYJKJPSPJSKECCJ Yi1 Journal of Materials Science: Materials in Electronics, 2020 | 3 | 2020 |
| Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge (1 1 0) metal oxide semiconductor devices K Agrawal, V Patil, V Barhate, G Yoon, YJ Lee, A Mahajan, J Yi Solid-State Electronics 167, 107797, 2020 | 2 | 2020 |
Dr. Ashok M MahajanUniversity Emeritus Professor & Ex-Senior Professor and Head, Deptt of Electronics, KBCNMU, JALGAON在 nmu.ac.in 的电子邮件经过验证
