受强制性开放获取政策约束的文章 - Khushabu Agrawal了解详情
无法在其他位置公开访问的文章：5 篇
HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment
KS Agrawal, VS Patil, AG Khairnar, AM Mahajan
Applied Surface Science 364, 747-751, 2016
强制性开放获取政策： Department of Science & Technology, India
Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge (100) prepared by PEALD
VS Patil, KS Agrawal, AG Khairnar, BJ Thibeault, AM Mahajan
Materials Science in Semiconductor Processing 56, 277-281, 2016
强制性开放获取政策： US National Science Foundation, Department of Science & Technology, India
The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors
SR Patil, VN Barhate, VS Patil, KS Agrawal, AM Mahajan
Journal of Materials Science: Materials in Electronics 33 (14), 11227-11235, 2022
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer
VN Barhate, KS Agrawal, VS Patil, SR Patil, AM Mahajan
Materials Science in Semiconductor Processing 117, 105161, 2020
强制性开放获取政策： Council of Scientific and Industrial Research, India
Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate
AG Khairnar, KS Agrawal, VS Patil, AM Mahajan
Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014
强制性开放获取政策： Council of Scientific and Industrial Research, India
可在其他位置公开访问的文章：9 篇
XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
V Patil, K Agrawal, V Barhate, S Patil, A Mahajan
Semiconductor Science and Technology 34 (3), 034004, 2019
强制性开放获取政策： Council of Scientific and Industrial Research, India
Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors
KS Agrawal, VS Patil, AG Khairnar, AM Mahajan
Journal of Materials Science: Materials in Electronics 28, 12503-12508, 2017
强制性开放获取政策： Department of Science & Technology, India
Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties
VN Barhate, KS Agrawal, VS Patil, AM Mahajan
Rare Metals 40 (7), 1835-1843, 2021
强制性开放获取政策： Council of Scientific and Industrial Research, India
Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study
KS Agrawal, VN Barhate, VS Patil, LS Patil, AM Mahajan
Applied Physics A 126, 1-10, 2020
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system
V Barhate, K Agrawal, V Patil, S Patil, A Mahajan
International Journal of Modern Physics B 32 (19), 1840074, 2018
强制性开放获取政策： Council of Scientific and Industrial Research, India
Atomic layer deposited HfO2 ultra-thin films on different crystallographic orientation Ge for CMOS applications
KS Agrawal, VS Patil, AM Mahajan
Thin Solid Films 654, 30-37, 2018
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
Pick-up and assembling of chemically sensitive van der Waals heterostructures using dry cryogenic exfoliation
V Patil, S Ghosh, A Basu, Kuldeep, A Dutta, K Agrawal, N Bhatia, A Shah, ...
Scientific Reports 14 (1), 11097, 2024
强制性开放获取政策： Department of Science & Technology, India
Improvement in Electrical Properties of A1/La2O3/ZrO2/ Gate Stack Deposited on LaON Passivated GaAs Substrate
VN Barhate, KS Agrawal, VS Patil, AM Mahajan
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
强制性开放获取政策： Council of Scientific and Industrial Research, India
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
AG Khairnar, VS Patil, KS Agrawal, RS Salunke, AM Mahajan
Semiconductors 51, 131-133, 2017
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
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