| Unraveling the dynamics of charge trapping and de-trapping in ferroelectric FETs S Deng, Z Zhao, YS Kim, S Duenkel, D MacMahon, R Tiwari, ... IEEE Transactions on Electron Devices 69 (3), 1503-1511, 2022 | 32 | 2022 |
| Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs N Choudhury, N Parihar, N Goel, A Thirunavukkarasu, S Mahapatra IEEE Journal of the Electron Devices Society 8, 1281-1288, 2020 | 26 | 2020 |
| A physical model for bulk gate insulator trap generation during bias-temperature stress in differently processed p-channel FETs T Samadder, N Choudhury, S Kumar, D Kochar, N Parihar, S Mahapatra IEEE Transactions on Electron Devices 68 (2), 485-490, 2021 | 21 | 2021 |
| Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs N Choudhury, U Sharma, H Zhou, RG Southwick, M Wang, S Mahapatra 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 18 | 2020 |
| Analysis of the hole trapping detrapping component of NBTI over extended temperature range N Choudhury, N Parihar, S Mahapatra 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 17 | 2020 |
| Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact S Mahapatra Springer Nature, 2021 | 13 | 2021 |
| A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs N Choudhury, S Mahapatra IEEE Transactions on Electron Devices 69 (7), 3535-3541, 2022 | 10 | 2022 |
| Analysis of sheet dimension (W, L) dependence of NBTI in GAA-SNS FETs N Choudhury, T Samadder, R Tiwari, H Zhou, RG Southwick, M Wang, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021 | 9 | 2021 |
| A model for hole trapping-detrapping kinetics during NBTI in p-Channel FETs N Choudhury, N Parihar, N Goel, A Thirunavukkarasu, S Mahapatra 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 9 | 2020 |
| Modeling and Analysis of PBTI, and HCD in Presence of Self-Heating in GAA-SNS NFETs N Choudhury, S Mahapatra IEEE Transactions on Electron Devices 69 (12), 6576-6581, 2022 | 8 | 2022 |
| A stochastic modeling framework for NBTI and TDDS in small area p-MOSFETs R Anandkrishnan, S Bhagdikar, N Choudhury, R Rao, B Fernandez, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 8 | 2018 |
| Industry interactive innovations in science, engineering and technology S Das, NR Choudhury, DN Tibarewala, DK Bhattacharya Springer, 2018 | 8 | 2018 |
| A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB S Mahapatra, A Ansari, AS Bisht, N Choudhury, N Parihar, P Chatterjee, ... IEEE Transactions on Electron Devices, 2023 | 7 | 2023 |
| On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs N Shanker, LC Wang, S Cheema, W Li, N Choudhury, C Hu, S Mahapatra, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 5 | 2022 |
| Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application K Ghosh, S Das, KR Khiangte, N Choudhury, A Laha Journal of Physics D: Applied Physics 50 (47), 475102, 2017 | 5 | 2017 |
| BAT Framework Modeling of RMG HKMG GAA-SNS FETs N Choudhury, T Samadder, R Southwick, H Zhou, M Wang, S Mahapatra Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 3 | 2022 |
| BTI analysis tool (BAT) model framework—Generation of bulk traps S Mahapatra, N Parihar, T Samadder, N Choudhury, A Raj Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 3 | 2022 |
| BTI analysis tool (BAT) model framework—Interface trap occupancy and hole trapping S Mahapatra, N Parihar, N Choudhury, N Goel Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 3 | 2022 |
| A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD S Mahapatra, H Diwakar, K Thakor, N Choudhury, P Chatterjee, S Kumar, ... IEEE Transactions on Electron Devices, 2023 | 2 | 2023 |
| Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress N Choudhury, A Ranjan, S Mahapatra 2022 IEEE International Reliability Physics Symposium (IRPS), P56-1-P56-6, 2022 | 1 | 2022 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)在 ee.iitb.ac.in 的电子邮件经过验证
