| A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% J Yoneda, K Takeda, T Otsuka, T Nakajima, MR Delbecq, G Allison, ... Nature nanotechnology 13 (2), 102-106, 2018 | 860 | 2018 |
| Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements S Huang, S Banerjee, RT Tung, S Oda Journal of applied physics 93 (1), 576-581, 2003 | 265 | 2003 |
| A fault-tolerant addressable spin qubit in a natural silicon quantum dot K Takeda, J Kamioka, T Otsuka, J Yoneda, T Nakajima, MR Delbecq, ... Science advances 2 (8), e1600694, 2016 | 260 | 2016 |
| A flexible and wearable terahertz scanner D Suzuki, S Oda, Y Kawano Nature Photonics 10 (12), 809-813, 2016 | 224 | 2016 |
| Photoluminescence mechanism in surface-oxidized silicon nanocrystals Y Kanemitsu, S Okamoto, M Otobe, S Oda Physical review B 55 (12), R7375, 1997 | 209 | 1997 |
| Fabrication of nanocrystalline silicon with small spread of particle size by pulsed gas plasma TIT Ifuku, MOM Otobe, AIA Itoh, SOS Oda Japanese journal of applied physics 36 (6S), 4031, 1997 | 187 | 1997 |
| Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique K Nishiguchi, X Zhao, S Oda Journal of applied physics 92 (5), 2748-2757, 2002 | 139 | 2002 |
| Electron transport in nanocrystalline Si based single electron transistors A Dutta, S Oda, Y Fu, M Willander Japanese Journal of Applied Physics 39 (7S), 4647, 2000 | 133 | 2000 |
| MAXI/GSC detection of a probable new X-ray transient MAXI J1820+ 070 T Kawamuro, H Negoro, T Yoneyama, S Ueno, H Tomida, M Ishikawa, ... The Astronomer's Telegram 11399, 1, 2018 | 119 | 2018 |
| ZnS blue‐light‐emitting diodes with an external quantum efficiency of 5×10−4 H Katayama, S Oda, H Kukimoto Applied Physics Letters 27 (12), 697-699, 1975 | 119 | 1975 |
| Highly oriented ZnO films prepared by MOCVD from diethylzinc and alcohols S Oda, H Tokunaga, N Kitajima, J Hanna, I Shimizu, H Kokado Japanese journal of applied physics 24 (12R), 1607, 1985 | 103 | 1985 |
| Process for forming deposited film S Ishihara, S Ohno, M Kanai, S Oda, I Shimizu US Patent 4,728,528, 1988 | 100 | 1988 |
| Diagnostic study of VHF plasma and deposition of hydrogenated amorphous silicon films S Oda, J Noda, M Matsumura Japanese journal of applied physics 29 (10R), 1889, 1990 | 98 | 1990 |
| Preparation of polycrystalline silicon by hydrogen-radical-enhanced chemical vapor deposition N Shibata, K Fukuda, H Ohtoshi, J Hanna, S Oda, I Shimizu Japanese journal of applied physics 26 (1A), L10, 1987 | 93 | 1987 |
| Charge injection and trapping in silicon nanocrystals MA Rafiq, Y Tsuchiya, H Mizuta, S Oda, S Uno, ZAK Durrani, WI Milne Applied Physics Letters 87 (18), 2005 | 92 | 2005 |
| Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory BJ Hinds, T Yamanaka, S Oda Journal of Applied Physics 90 (12), 6402-6408, 2001 | 90 | 2001 |
| Silicon nanoelectronics S Oda, D Ferry CRC press, 2017 | 86 | 2017 |
| Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement S Huang, S Banerjee, RT Tung, S Oda Journal of applied physics 94 (11), 7261-7265, 2003 | 83 | 2003 |
| Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots G Yamahata, T Kodera, HOH Churchill, K Uchida, CM Marcus, S Oda Physical Review B—Condensed Matter and Materials Physics 86 (11), 115322, 2012 | 79 | 2012 |
| Study of structural and optical properties of nanocrystalline silicon embedded in SiO2 F Yun, BJ Hinds, S Hatatani, S Oda, QX Zhao, M Willander Thin Solid Films 375 (1-2), 137-141, 2000 | 73 | 2000 |
Zahid DurraniDept. of Electrical and Electronic Engineering, Imperial College London在 imperial.ac.uk 的电子邮件经过验证
