The charge plasma PN diode RJE Hueting, B Rajasekharan, C Salm, J Schmitz IEEE electron device letters 29 (12), 1367-1369, 2008 | 321 | 2008 |
Si-Ge CMOS semiconductor device J Schmitz, PH Woerlee US Patent 6,271,551, 2001 | 275 | 2001 |
Review of degradation and failure phenomena in photovoltaic modules M Aghaei, A Fairbrother, A Gok, S Ahmad, S Kazim, K Lobato, G Oreski, ... Renewable and Sustainable Energy Reviews 159, 112160, 2022 | 266 | 2022 |
A silicon-based electrical source of surface plasmon polaritons RJ Walters, RVA van Loon, I Brunets, J Schmitz, A Polman Nature Materials 9 (1), 21-25, 2010 | 262 | 2010 |
Fabrication and characterization of the charge-plasma diode B Rajasekharan, RJE Hueting, C Salm, T Van Hemert, RAM Wolters, ... IEEE electron device letters 31 (6), 528-530, 2010 | 249 | 2010 |
ATLAS: Letter of intent for a general purpose p p experiment at the large hadron collider at CERN DG al. (ATLAS collaboration) CERN Library, 1992 | 209* | 1992 |
An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology M Chefdeville, P Colas, Y Giomataris, H van der Graaf, EHM Heijne, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006 | 133 | 2006 |
Detection of single electrons by means of a Micromegas-covered MediPix2 pixel CMOS readout circuit M Campbell, M Chefdeville, P Colas, AP Colijn, A Fornaini, Y Giomataris, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 110 | 2005 |
Electron, pion and multiparticle detection with a lead/scintillating-fiber calorimeter D Acosta, S Buontempo, L Caloba, M Caria, R DeSalvo, A Ereditato, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1991 | 104 | 1991 |
Study of screen printed metallization for polysilicon based passivating contacts HE Çiftpınar, MK Stodolny, Y Wu, GJM Janssen, J Löffler, J Schmitz, ... Energy Procedia 124, 851-861, 2017 | 103 | 2017 |
Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells MK Stodolny, J Anker, BLJ Geerligs, GJM Janssen, BWH Van De Loo, ... Energy Procedia 124, 635-642, 2017 | 96 | 2017 |
Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors HP Tuinhout, AH Montree, J Schmitz, PA Stolk International Electron Devices Meeting. IEDM Technical Digest, 631-634, 1997 | 96 | 1997 |
Method of manufacturing a nonvolatile memory AH Montree, J Schmitz, PH Woerlee US Patent 6,251,729, 2001 | 92 | 2001 |
The readout of a GEM or Micromegas-equipped TPC by means of the Medipix2 CMOS sensor as direct anode P Colas, AP Colijn, A Fornaini, Y Giomataris, H Van der Graaf, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2004 | 90 | 2004 |
RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics J Schmitz, FN Cubaynes, RJ Havens, R De Kort, AJ Scholten, ... IEEE electron device letters 24 (1), 37-39, 2003 | 80 | 2003 |
Low temperature thin films for next-generation microelectronics J Schmitz Surface and coatings technology 343, 83-88, 2018 | 79 | 2018 |
Growth kinetics and oxidation mechanism of ALD TiN thin films monitored by in situ spectroscopic ellipsometry H Van Bui, AW Groenland, AAI Aarnink, RAM Wolters, J Schmitz, ... Journal of the Electrochemical Society 158 (3), H214, 2011 | 78 | 2011 |
Characterization of dielectric charging in RF MEMS capacitive switches RW Herfst, HGA Huizing, PG Steeneken, J Schmitz 2006 IEEE International Conference on Microelectronic Test Structures, 133-136, 2006 | 78 | 2006 |
The electrical conduction and dielectric strength of SU-8 J Melai, C Salm, S Smits, J Visschers, J Schmitz Journal of Micromechanics and Microengineering 19 (6), 065012, 2009 | 72 | 2009 |
Time and voltage dependence of dielectric charging in RF MEMS capacitive switches RW Herfst, PG Steeneken, J Schmitz 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 61 | 2007 |