受强制性开放获取政策约束的文章 - KASUNAIDU VECHALAPU了解详情
无法在其他位置公开访问的文章：6 篇
Design and evaluation of isolated gate driver power supply for medium voltage converter applications
K Mainali, S Madhusoodhanan, A Tripathi, K Vechalapu, A De, ...
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 1632-1639, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Medium voltage (≥ 2.3 kV) high frequency three-phase two-level converter design and demonstration using 10 kV SiC MOSFETs for high speed motor drive applications
S Madhusoodhanan, K Mainali, A Tripathi, K Vechalapu, S Bhattacharya
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 1497-1504, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET
A Tripathi, K Mainali, S Madhusoodhanan, A Yadav, K Vechalapu, ...
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2076-2082, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Comparative evaluation of 15 kV SiC IGBT and 15 kV SiC MOSFET for 3-phase medium voltage high power grid connected converter applications
S Madhusoodhanan, K Mainali, A Tripathi, A Kadavelugu, K Vechalapu, ...
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-8, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Enabling DC microgrids with direct MV DC interfacing DAB converter based on 15 kV SiC IGBT and 15 kV SiC MOSFET
A Tripathi, S Madhusoodhanan, KMK Vechalapu, R Chattopadhyay, ...
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Series injection enabled full ZVS light load operation of a 15kV SiC IGBT based dual active half bridge converter
A Tripathi, S Madhusoodhanan, K Mainali, K Vechalapu, S Bhattacharya
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 886-892, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
可在其他位置公开访问的文章：2 篇
A novel ZVS range enhancement technique of a high-voltage dual active bridge converter using series injection
AK Tripathi, K Mainali, S Madhusoodhanan, A Kadavelugu, K Vechalapu, ...
IEEE Transactions on Power Electronics 32 (6), 4231-4245, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Gate driver design considerations for silicon carbide MOSFETs including series connected devices
S Hazra, K Vechalapu, S Madhusoodhanan, S Bhattacharya, K Hatua
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 1402-1409, 2017
强制性开放获取政策： US National Science Foundation
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