| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 746 | 2016 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 593 | 2019 |
| Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ... Journal of Applied Physics 110 (12), 2011 | 547 | 2011 |
| Modeling and optimization of a solar energy harvester system for self-powered wireless sensor networks D Dondi, A Bertacchini, D Brunelli, L Larcher, L Benini IEEE Transactions on industrial electronics 55 (7), 2759-2766, 2008 | 475 | 2008 |
| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 311 | 2017 |
| A Physical Model of the Temperature Dependence of the Current Through Stacks L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ... IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011 | 275 | 2011 |
| Analysis of reliability and power efficiency in cascode class-E PAs A Mazzanti, L Larcher, R Brama, F Svelto IEEE Journal of Solid-State Circuits 41 (5), 1222-1229, 2006 | 231 | 2006 |
| Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker IEEE Transactions on electron devices 62 (6), 1998-2006, 2015 | 224 | 2015 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 165 | 2021 |
| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... 2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010 | 163 | 2010 |
| Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells L Larcher, G Verzellesi, P Pavan, E Lusky, I Bloom, B Eitan IEEE Transactions on Electron Devices 49 (11), 1939-1946, 2002 | 148 | 2002 |
| Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model L Larcher IEEE Transactions on Electron Devices 50 (5), 1246-1253, 2003 | 138 | 2003 |
| A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State FM Puglisi, L Larcher, A Padovani, P Pavan IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015 | 130 | 2015 |
| Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ... Applied Physics Letters 108 (1), 2016 | 122 | 2016 |
| A solar energy harvesting circuit for low power applications D Dondi, A Bertacchini, L Larcher, P Pavan, D Brunelli, L Benini 2008 IEEE International Conference on Sustainable Energy Technologies, 945-949, 2008 | 121 | 2008 |
| Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ... Solid-State Electronics 65, 146-150, 2011 | 117 | 2011 |
| A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling A Padovani, DZ Gao, AL Shluger, L Larcher Journal of Applied physics 121 (15), 2017 | 116 | 2017 |
| Radiation effects on floating-gate memory cells G Cellere, P Pellati, A Chimenton, J Wyss, A Modelli, L Larcher, ... IEEE Transactions on Nuclear Science 48 (6), 2222-2228, 2001 | 111 | 2001 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... 2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011 | 106 | 2011 |
| Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics L Vandelli, A Padovani, L Larcher, G Bersuker IEEE Transactions on Electron Devices 60 (5), 1754-1762, 2013 | 99 | 2013 |
