受强制性开放获取政策约束的文章 - Chun Pui Kwan (Jeffrey)了解详情
可在其他位置公开访问的文章：16 篇
Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors
M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ...
ACS nano 13 (1), 803-811, 2018
强制性开放获取政策： US National Science Foundation, US Department of Energy
Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors
G He, H Ramamoorthy, CP Kwan, YH Lee, J Nathawat, R Somphonsane, ...
Nano letters 16 (10), 6445-6451, 2016
强制性开放获取政策： US Department of Energy
“Freeing” graphene from its substrate: observing intrinsic velocity saturation with rapid electrical pulsing
H Ramamoorthy, R Somphonsane, J Radice, G He, CP Kwan, JP Bird
Nano letters 16 (1), 399-403, 2016
强制性开放获取政策： US Department of Energy
Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates
CP Kwan, M Street, A Mahmood, W Echtenkamp, M Randle, K He, ...
AIP Advances 9 (5), 2019
强制性开放获取政策： US National Science Foundation
Negative differential conductance & hot-carrier avalanching in monolayer WS2 FETs
G He, J Nathawat, CP Kwan, H Ramamoorthy, R Somphonsane, M Zhao, ...
Scientific reports 7 (1), 11256, 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Moving towards the magnetoelectric graphene transistor
S Cao, Z Xiao, CP Kwan, K Zhang, JP Bird, L Wang, WN Mei, X Hong, ...
Applied Physics Letters 111 (18), 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy
Dielectric properties of thin films grown on elemental and oxide metallic substrates
A Mahmood, M Street, W Echtenkamp, CP Kwan, JP Bird, C Binek
Physical Review Materials 2 (4), 044401, 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
Transient response of h-BN-encapsulated graphene transistors: signatures of self-heating and hot-carrier trapping
J Nathawat, M Zhao, CP Kwan, S Yin, N Arabchigavkani, M Randle, ...
ACS omega 4 (2), 4082-4090, 2019
强制性开放获取政策： US Department of Energy
Probing charge trapping and joule heating in graphene field-effect transistors by transient pulsing
H Ramamoorthy, R Somphonsane, J Radice, G He, J Nathawat, CP Kwan, ...
Semiconductor Science and Technology 32 (8), 084005, 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy
Epitaxial growth of cobalt oxide phases on Ru (0001) for spintronic device applications
O Olanipekun, C Ladewig, JA Kelber, MD Randle, J Nathawat, CP Kwan, ...
Semiconductor Science and Technology 32 (9), 095011, 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Evaluating the sources of graphene’s resistivity using differential conductance
R Somphonsane, H Ramamoorthy, G He, J Nathawat, CP Kwan, ...
Scientific Reports 7 (1), 10317, 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy
Asymmetrically engineered nanoscale transistors for on-demand sourcing of terahertz plasmons
B Barut, X Cantos-Roman, J Crabb, CP Kwan, R Dixit, N Arabchigavkani, ...
Nano Letters 22 (7), 2674-2681, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence
R Somphonsane, H Ramamoorthy, G He, J Nathawat, S Yin, CP Kwan, ...
Scientific reports 10 (1), 5611, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy, Swedish Research …
Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
S Yin, JG Gluschke, AP Micolich, J Nathawat, B Barut, R Dixit, ...
ACS Applied Electronic Materials 1 (11), 2260-2267, 2019
强制性开放获取政策： US Department of Energy, Australian Research Council
Pulsed studies of intervalley transfer in : A paradigm for valley photovoltaics
R Dixit, B Barut, S Yin, J Nathawat, M Randle, N Arabchigavkani, K He, ...
Physical Review Materials 4 (8), 085404, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy
Building the quasi one dimensional transistor from 2D materials
PV Galiy, M Randle, A Lipatov, L Wang, S Gilbert, N Vorobeva, A Kumar, ...
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019
强制性开放获取政策： US National Science Foundation
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