受强制性开放获取政策约束的文章 - François Triozon了解详情
无法在其他位置公开访问的文章：9 篇
Nanosecond laser anneal (NLA) for Si-implanted HfO2 ferroelectric memories integrated in back-end of line (BEOL)
L Grenouillet, T Francois, J Coignus, S Kerdiles, N Vaxelaire, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
强制性开放获取政策： European Commission
Performance assessment of BEOL-integrated HfO2-based ferroelectric capacitors for FeRAM memory arrays
L Grenouillet, T Francois, J Coignus, N Vaxelaire, C Carabasse, F Triozon, ...
2020 IEEE Silicon Nanoelectronics Workshop (SNW), 5-6, 2020
强制性开放获取政策： European Commission
Carrier scattering in high-κ/metal gate stacks
Z Zeng, F Triozon, YM Niquet
Journal of Applied Physics 121 (11), 2017
强制性开放获取政策： European Commission
Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K-Towards compact modeling for cryo CMOS application
M Aouad, S Martinie, F Triozon, T Poiroux, M Vinet, G Ghibaudo
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
强制性开放获取政策： European Commission
Chemically enriched graphene-based switching devices: A novel principle driven by impurity-induced quasibound states and quantum coherence
S Roche, B Biel, A Cresti, F Triozon
Physica E: Low-dimensional Systems and Nanostructures 44 (6), 960-962, 2012
强制性开放获取政策： Government of Spain
Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K–Towards compact modeling for cryo CMOS application
M Aouad, T Poiroux, S Martinie, F Triozon, M Vinet, G Ghibaudo
Solid-State Electronics 186, 108126, 2021
强制性开放获取政策： European Commission
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface
B Rrustemi, AG Viey, MA Jaud, F Triozon, W Vandendaele, C Leroux, ...
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
强制性开放获取政策： Agence Nationale de la Recherche
An improved mobility model for FDSOI TriGate and other multi-gate nanowire MOSFETs down to nanometer-scaled dimensions
M Casse, J Pelloux-Prayer, Z Zeng, YM Niquet, F Triozon, S Barraud, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
强制性开放获取政策： European Commission
Carrier mobilities and contact resistances in nanowire devices
YM Niquet, L Bourdet, Z Zeng, F Triozon
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-2, 2018
强制性开放获取政策： Government of Italy
可在其他位置公开访问的文章：13 篇
Charge transport in disordered graphene-based low dimensional materials
A Cresti, N Nemec, B Biel, G Niebler, F Triozon, G Cuniberti, S Roche
Nano Research 1, 361-394, 2008
强制性开放获取政策： German Research Foundation
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor
B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano letters 14 (4), 2094-2098, 2014
强制性开放获取政策： European Commission
Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics
P Marconcini, A Cresti, F Triozon, G Fiori, B Biel, YM Niquet, M Macucci, ...
ACS nano 6 (9), 7942-7947, 2012
强制性开放获取政策： Government of Spain
A Simple interpolation model for the carrier mobility in trigate and gate-all-around silicon NWFETs
Z Zeng, F Triozon, S Barraud, YM Niquet
IEEE Transactions on Electron Devices 64 (6), 2485-2491, 2017
强制性开放获取政策： European Commission
Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder
J Park, KH Xue, M Mouis, F Triozon, A Cresti
Physical Review B 100 (23), 235403, 2019
强制性开放获取政策： Agence Nationale de la Recherche
Stacked nanowires/nanosheets GAA MOSFET from technology to design enablement
JC Barbé, S Barraud, O Rozeau, S Martinia, J Lacord, P Blaise, Z Zeng, ...
2017 International Conference on Simulation of Semiconductor Processes and …, 2017
强制性开放获取政策： European Commission
Competition between magnetic field dependent band structure and coherent backscattering in multiwall carbon nanotubes
B Stojetz, S Roche, C Miko, F Triozon, L Forró, C Strunk
New Journal of Physics 9 (3), 56, 2007
强制性开放获取政策： German Research Foundation
Investigation on interface charges in SiN/AlxGa1− xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors
B Rrustemi, MA Jaud, F Triozon, C Piotrowicz, W Vandendaele, C Leroux, ...
Journal of Applied Physics 130 (10), 2021
强制性开放获取政策： Agence Nationale de la Recherche
High and low-field contact resistances in trigate devices in a Non-Equilibrium Green's Functions framework
L Bourdet, J Li, J Pelloux-Prayer, F Triozon, M Cassé, S Barraud, ...
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
强制性开放获取政策： European Commission
Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian
Y Hirchaou, B Sklénard, W Goes, P Blaise, F Triozon, J Li
Applied Physics Letters 124 (5), 2024
强制性开放获取政策： European Commission
Carrier scattering by workfunction fluctuations and interface dipoles in high-K/metal gate stacks
Z Zeng, F Triozon, YM Niquet
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
强制性开放获取政策： European Commission
出版信息和资助信息由计算机程序自动确定