| Direct comparison of ferroelectric properties in Hf0. 5Zr0. 5O2 between thermal and plasma-enhanced atomic layer deposition J Hur, N Tasneem, G Choe, P Wang, Z Wang, AI Khan, S Yu Nanotechnology 31 (50), 505707, 2020 | 56 | 2020 |
| Adjusting the operating voltage of an nanoelectromechanical relay using negative capacitance K Choe, C Shin IEEE Transactions on Electron Devices 64 (12), 5270-5273, 2017 | 31 | 2017 |
| Ferroelectric HfO2-based synaptic devices: recent trends and prospects S Yu, J Hur, YC Luo, W Shim, G Choe, P Wang Semiconductor Science and Technology 36 (10), 104001, 2021 | 28 | 2021 |
| Variability Study of Ferroelectric Field-Effect Transistors towards 7nm Technology Node G Choe, S Yu IEEE Journal of the Electron Devices Society, 2021 | 22 | 2021 |
| 3D AND-type ferroelectric transistors for compute-in-memory and the variability analysis G Choe, A Lu, S Yu IEEE Electron Device Letters 43 (2), 304-307, 2021 | 19 | 2021 |
| Impact of Random Phase Distribution in Ferroelectric Transistors based 3D nand Architecture on In-Memory Computing G Choe, W Shim, J Hur, P Wang, AI Khan, S Yu IEEE Transactions on Electron Devices, 2021 | 18 | 2021 |
| Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor J Hur, P Wang, Z Wang, G Choe, N Tasneem, AI Khan, S Yu 2020 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2020 | 15 | 2020 |
| Variability analysis for ferroelectric field-effect transistors G Choe, S Yu 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 14 | 2021 |
| Compute-in-memory: From device innovation to 3D system integration S Yu, W Shim, J Hur, Y Luo, G Choe, W Li, A Lu, X Peng ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 11 | 2021 |
| Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs J Min, G Choe, C Shin Current Applied Physics 20 (11), 1222-1225, 2020 | 11 | 2020 |
| Multigate Ferroelectric Transistor Design Toward 3-nm Technology Node G Choe, S Yu IEEE Transactions on Electron Devices, 2021 | 10 | 2021 |
| Ferroelectric-gated Nanoelectromechanical Nonvolatile Memory Cell K Choe, C Shin IEEE Transactions on Electron Devices, 2018 | 9 | 2018 |
| Machine learning assisted statistical variation analysis of ferroelectric transistors: From experimental metrology to predictive modeling G Choe, PV Ravindran, A Lu, J Hur, M Lederer, A Reck, S Lombardo, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 8 | 2022 |
| Experimental RF characterization of ferroelectric hafnium zirconium oxide material at GHz for microwave applications B Lin, G Choe, J Hur, AI Khan, S Yu, H Wang 2021 Device Research Conference (DRC), 1-2, 2021 | 8 | 2021 |
| Machine learning-assisted statistical variation analysis of ferroelectric transistor: From experimental metrology to adaptive modeling G Choe, PV Ravindran, J Hur, M Lederer, A Reck, A Khan, S Yu IEEE Transactions on Electron Devices 70 (4), 2015-2020, 2023 | 6 | 2023 |
| Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature J Hur, C Park, G Choe, PV Ravindran, AI Khan, S Yu IEEE Transactions on Electron Devices 69 (10), 5948-5951, 2022 | 6 | 2022 |
| Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing G Choe, W Shim, J Hur, AI Khan, S Yu International Conference on Simulation of Semiconductor Processes and …, 2020 | 5 | 2020 |
| Impact of negative capacitance on the energy-delay property of an electro-mechanical relay K Choe, C Shin Japanese Journal of Applied Physics, 2019 | 5 | 2019 |
| Energy-Delay Sensitivity Analysis of a Nanoelectromechanical Relay With the Negative Capacitance of a Ferroelectric Capacitor C Yoon, G Choe, C Shin IEEE Journal of Electron Device Society, 2020 | 4 | 2020 |
| Theoretical study of ferroelectric-gated nanoelectromechanical diode nonvolatile memory cell K Choe, J Park, C Shin Solid-State Electronics, 2019 | 3 | 2019 |
Shimeng YuGeorgia Institute of Technology, Professor of ECE在 ece.gatech.edu 的电子邮件经过验证
