Nanowire transistors without junctions JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ... Nature nanotechnology 5 (3), 225-229, 2010 | 2748 | 2010 |
Junctionless multigate field-effect transistor CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge Applied Physics Letters 94 (5), 2009 | 1312 | 2009 |
Junctionless nanowire transistor (JNT): properties and design guidelines A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, P Razavi, ... Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010 | 690* | 2010 |
Performance estimation of junctionless multigate transistors CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge Solid-State Electronics 54 (2), 97-103, 2010 | 627 | 2010 |
High-temperature performance of silicon junctionless MOSFETs CW Lee, A Borne, I Ferain, A Afzalian, R Yan, N Dehdashti Akhavan, ... Electron Devices, IEEE Transactions on 57 (3), 620-625, 2010 | 440 | 2010 |
Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (7), 2010 | 371 | 2010 |
Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (10), 2010 | 282 | 2010 |
Junctionless multiple-gate transistors for analog applications RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ... IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011 | 278 | 2011 |
SOI gated resistor: CMOS without junctions JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ... 2009 IEEE International SOI Conference, 1-2, 2009 | 182 | 2009 |
Junctionless transistors: physics and properties JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ... Semiconductor-on-insulator materials for nanoelectronics applications, 187-200, 2011 | 150 | 2011 |
Mobility improvement in nanowire junctionless transistors by uniaxial strain JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ... Applied Physics Letters 97 (4), 2010 | 60 | 2010 |
Junctionless 6T SRAM cell A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ... Electronics letters 46 (22), 1491-1493, 2010 | 57 | 2010 |
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ... Science of Advanced Materials 3 (3), 477-482, 2011 | 52 | 2011 |
Short-channel junctionless nanowire transistors CW Lee, I Ferain, A Kranti, ND Akhavan, P Razavi, R Yan, R Yu, B O’Neill, ... Proc. SSDM, 1044-1045, 2010 | 47 | 2010 |
A simulation comparison between junctionless and inversion-mode MuGFETs JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ... ECS Transactions 35 (5), 63, 2011 | 44 | 2011 |
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations R Yan, D Lynch, T Cayron, D Lederer, A Afzalian, CW Lee, N Dehdashti, ... Solid-State Electronics 52 (12), 1872-1876, 2008 | 41 | 2008 |
Investigation of high-performance sub-50 nm junctionless nanowire transistors R Yan, A Kranti, I Ferain, CW Lee, R Yu, N Dehdashti, P Razavi, ... Microelectronics Reliability 51 (7), 1166-1171, 2011 | 40 | 2011 |
A new F (ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs A Afzalian, ND Akhavan, CW Lee, R Yan, I Ferain, P Razavi, JP Colinge Journal of Computational Electronics 8, 287-306, 2009 | 40 | 2009 |
Ultra-scaled Z-RAM cell S Okhonin, M Nagoga, CW Lee, JP Colinge, A Afzalian, R Yan, ... 2008 IEEE International SOI Conference, 157-158, 2008 | 36 | 2008 |
Quantum confinement effects in capacitance behavior of multigate silicon nanowire MOSFETs A Afzalian, CW Lee, ND Akhavan, R Yan, I Ferain, JP Colinge IEEE transactions on nanotechnology 10 (2), 300-309, 2010 | 28 | 2010 |