| Near-field probing of Mie resonances in single TiO2 microspheres at terahertz frequencies O Mitrofanov, F Dominec, P Kužel, JL Reno, I Brener, UC Chung, ... Optics express 22 (19), 23034-23042, 2014 | 46 | 2014 |
| Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs T Hubáček, A Hospodková, K Kuldová, J Oswald, J Pangrác, V Jarý, ... CrystEngComm 21 (2), 356-362, 2019 | 24 | 2019 |
| Terahertz imaging of sub-wavelength particles with Zenneck surface waves M Navarro-Cia, M Natrella, F Dominec, JC Delagnes, P Kužel, P Mounaix, ... Applied physics letters 103 (22), 2013 | 22 | 2013 |
| Transition between metamaterial and photonic-crystal behavior in arrays of dielectric rods F Dominec, C Kadlec, H Němec, P Kužel, F Kadlec Optics express 22 (25), 30492-30503, 2014 | 21 | 2014 |
| Design and construction of a digital CCD spectrometer F Dominec Czech Technical University, 2009 | 19 | 2009 |
| Free-standing ZnO: Mo nanorods exposed to hydrogen or oxygen plasma: influence on the intrinsic and extrinsic defect states M Buryi, Z Remeš, V Babin, S Chertopalov, K Děcká, F Dominec, J Mičová, ... Materials 15 (6), 2261, 2022 | 12 | 2022 |
| InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy A Hospodková, E Hulicius, J Pangrác, F Dominec, MP Mikhailova, ... Journal of Crystal Growth 464, 206-210, 2017 | 12 | 2017 |
| InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties A Hospodková, T Hubáček, J Oswald, J Pangrác, K Kuldová, M Hývl, ... physica status solidi (b) 255 (5), 1700464, 2018 | 11 | 2018 |
| Changes to Material Phase and Morphology Due to High-Level Molybdenum Doping of ZnO Nanorods: Influence on Luminescence and Defects M Buryi, V Babin, N Neykova, YM Wang, Z Remeš, K Ridzoňová, ... Materials 16 (9), 3294, 2023 | 7 | 2023 |
| Bulk magnetic terahertz metamaterials based on dielectric microspheres M Šindler, C Kadlec, F Dominec, P Kužel, C Elissalde, A Kassas, ... Optics Express 24 (16), 18340-18345, 2016 | 7 | 2016 |
| Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties F Dominec, A Hospodková, T Hubáček, M Zíková, J Pangrác, K Kuldová, ... Journal of Crystal Growth 507, 246-250, 2019 | 6 | 2019 |
| Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface A Hospodková, F Hájek, T Hubáček, Z Gedeonová, P Hubík, M Hývl, ... ACS applied materials & interfaces 15 (15), 19646-19652, 2023 | 5 | 2023 |
| Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers A Hospodková, J Čížek, F Hájek, T Hubáček, J Pangrác, F Dominec, ... Materials 15 (19), 6916, 2022 | 4 | 2022 |
| Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms T Vaněk, F Hájek, F Dominec, T Hubáček, K Kuldová, J Pangrác, ... Journal of Crystal Growth 565, 126151, 2021 | 3 | 2021 |
| Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface T Hubáček, A Hospodková, J Oswald, K Kuldová, J Pangrác, M Zíková, ... Journal of Crystal Growth 507, 310-315, 2019 | 3 | 2019 |
| Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters A Hospodková, F Hájek, T Hubáček, Z Gedeonová, P Hubík, JJ Mareš, ... Journal of Crystal Growth 605, 127061, 2023 | 2 | 2023 |
| The Effect of Be Co‐Doping on Luminescence Properties of Gd3Al3Ga2O12:Ce Glass Ceramics Y Tratsiak, E Trusova, M Buryi, V Babin, F Dominec, F Hájek, ... physica status solidi (a) 219 (13), 2200043, 2022 | 2 | 2022 |
| Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells F Hájek, A Hospodková, T Hubáček, J Oswald, J Pangrác, F Dominec, ... Journal of Luminescence 236, 118127, 2021 | 2 | 2021 |
| Zenneck THz surface waves-assisted imaging of subwavelength dielectric particles M Navarro-Cía, M Natrella, F Dominec, JC Delagnes, P Kužel, P Mounaix, ... CLEO: Science and Innovations, STh4F. 2, 2014 | 2 | 2014 |
| Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn F Hájek, V Jarý, T Hubáček, F Dominec, A Hospodková, K Kuldová, ... ECS Journal of Solid State Science and Technology 12 (6), 066004, 2023 | 1 | 2023 |
