Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ... ACS nano 11 (3), 2785-2793, 2017 | 84 | 2017 |
Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene F Chen, H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman IEEE Electron Device Letters 2016, 2016 | 75 | 2016 |
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET F Chen, H Ilatikhameneh, G Klimeck, Z Chen, R Rahman IEEE Journal of the Electron Devices Society 4 (3), 125-128, 2016 | 51 | 2016 |
Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications H Ilatikhameneh, T Ameen, F Chen, H Sahasrabudhe, G Klimeck, ... IEEE Transactions on Nanotechnology 17 (2), 293-298, 2018 | 44 | 2018 |
Switching Mechanism and the Scalability of vertical-TFETs F Chen, H Ilatikhameneh, Y Tan, G Klimeck, R Rahman IEEE Transaction on Electron Devices, 2018 | 39 | 2018 |
First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding Y Tan, F Chen, A Ghosh Applied Physics Letters 109 (10), 101601, 2016 | 37 | 2016 |
STT-MRAM design technology co-optimization for hardware neural networks N Xu, Y Lu, W Qi, Z Jiang, X Peng, F Chen, J Wang, W Choi, S Yu, DS Kim 2018 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2018 | 34 | 2018 |
Transport in vertically stacked hetero-structures from 2D materials F Chen, H Ilatikhameneh, Y Tan, D Valencia, G Klimeck, R Rahman 33rd International Conference on the Physics of Semiconductors (ICPS), 2016 | 18 | 2016 |
Achieving a higher performance in bilayer graphene FET -- strain engineering F Chen, H Ilatikhameneh, G Klimeck, R Rahman, T Chu, Z Chen International Conference on Simulation of Semiconductor Processes and …, 2015 | 18 | 2015 |
In-surface confinement of topological insulator nanowire surface states F Chen, L Jauregui, Y Tan, M Manfra, Y Chen, K Gerhard, T Kubis Applied Physics Letters 107 (12), 121605, 2015 | 17 | 2015 |
Electrically Doped 2D Material Tunnel Transistors H Ilatikhameneh, F Chen, J Appenzeller, R Rahman, G Klimeck International Workshop on Computational Electronics (IWCE), 2015 | 12 | 2015 |
The potential value of M6a rna methylation in the development of cancers focus on malignant glioma F Chen, X Xie, M Chao, H Cao, L Wang Frontiers in immunology 13, 917153, 2022 | 11 | 2022 |
The role of m6A regulator-mediated methylation modification and tumor microenvironment infiltration in glioblastoma multiforme L Wang, H Cao, Y Zhong, P Ji, F Chen Frontiers in Cell and Developmental Biology 10, 842835, 2022 | 10 | 2022 |
NEMO5: Why must we treat topological insulator nanowires atomically? F Chen, M Manfra, G Klimeck, T Kubis International Workshop on Computational Electronics (IWCE), 2015 | 8 | 2015 |
Novel III-N heterostructure devices for low-power logic and more P Fay, W Li, L Cao, K Pourang, SM Islam, C Lund, S Saima, ... 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 767-769, 2016 | 7 | 2016 |
Transport Properties of Bilayer Graphene Field Effect Transistor FW Chen, H Ilatikhameneh, T Chu, R Rahman, J Appenzeller, Z Chen, ... TECHCON, 2015 | 7 | 2015 |
Assessing Intrinsic and Extrinsic End-of-Life Risk Using Functional SRAM Wafer Level Testing YM Randriamihaja, W McMahon, S Balasubramanian, T Nigam, ... IEEE International Reliability Physics Symposium, 6A. 5.1-6A. 5.4, 2015 | 6 | 2015 |
Rare-failure oriented STT-MRAM technology optimization N Xu, F Chen, D Apalkov, W Qi, J Wang, Z Jiang, W Choi, DS Kim 2018 IEEE Symposium on VLSI Technology, 187-188, 2018 | 5 | 2018 |
Dramatic impact of dimensionality on the electrostatics of PN junctions H Ilatikhameneh, T Ameen, F Chen, H Sahasrabudhe, G Klimeck, ... arXiv preprint arXiv:1704.05488, 2017 | 4 | 2017 |
Systems and methods for wafer map analysis XU Nuo, C Fan, W Qi, J Kim, J Wang, Y Lu, C Woosung US Patent 11,282,695, 2022 | 2 | 2022 |