| Five-volt vertically-stacked, single-cell GaAs photonic power converter CE Valdivia, MM Wilkins, B Bouzazi, A Jaouad, V Aimez, R Arès, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015 | 45 | 2015 |
| Properties of Chemical Beam Epitaxy grown GaAs0. 995N0. 005 homo-junction solar cell B Bouzazi, K Nishimura, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Current Applied Physics 10 (2), S188-S190, 2010 | 23 | 2010 |
| Simulation of a through cell via contacts architecture for HCPV multi-junction solar cells O Richard, A Jaouad, B Bouzazi, R Arès, S Fafard, V Aimez Solar Energy Materials and Solar Cells 144, 173-180, 2016 | 21 | 2016 |
| Double carriers pulse DLTS for the characterization of electron–hole recombination process in GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Physica B: Condensed Matter 406 (5), 1070-1075, 2011 | 21 | 2011 |
| Origin investigation of a nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy B Bouzazi, JH Lee, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Japanese Journal of Applied Physics 50 (5R), 051001, 2011 | 19 | 2011 |
| Nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Japanese Journal of Applied Physics 49 (5R), 051001, 2010 | 17 | 2010 |
| Nitrogen related electron trap with high capture cross section in n-type GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Applied physics express 3 (5), 051002, 2010 | 17 | 2010 |
| Thin n/p GaAs junctions for novel high-efficiency phototransducers based on a vertical epitaxial heterostructure architecture MCA York, F Proulx, DP Masson, A Jaouad, B Bouzazi, R Arès, V Aimez, ... Mrs Advances 1 (14), 881-890, 2016 | 15 | 2016 |
| Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi Journal of alloys and compounds 552, 469-474, 2013 | 15 | 2013 |
| Impact of via hole integration on multijunction solar cells for through cell via contacts and associated passivation treatment M de Lafontaine, M Darnon, C Colin, B Bouzazi, M Volatier, R Ares, ... IEEE Journal of Photovoltaics 7 (5), 1456-1461, 2017 | 14 | 2017 |
| Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent S Fafard, F Proulx, MCA York, M Wilkins, CE Valdivia, M Bajcsy, D Ban, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016 | 14 | 2016 |
| Properties of a nitrogen-related hole trap acceptor-like state in p-type GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Japanese Journal of Applied Physics 49 (12R), 121001, 2010 | 14 | 2010 |
| Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi Current applied physics 13 (7), 1269-1274, 2013 | 11 | 2013 |
| Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic gaas n/p junctions MCA York, F Proulx, DP Masson, A Jaouad, B Bouzazi, R Arès, V Aimez, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016 | 9 | 2016 |
| Plasma etching applications in concentrated photovoltaic cell fabrication M de Lafontaine, M Darnon, A Jaouad, P Albert, B Bouzazi, C Colin, ... AIP Conference Proceedings 1766 (1), 2016 | 8 | 2016 |
| Analysis of current transport mechanisms in GaAsN homojunction solar cell grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-7, 2012 | 8 | 2012 |
| III-VN materials for super high-efficiency multijunction solar cells M Yamaguchi, B Bouzazi, H Suzuki, K Ikeda, N Kojima, Y Ohshita AIP Conference Proceedings 1477 (1), 24-27, 2012 | 7 | 2012 |
| Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi Japanese Journal of Applied Physics 51 (2S), 02BP02, 2012 | 7 | 2012 |
| Design of thin InGaAsN(Sb) junctions for use in four-junction concentrating photovoltaic devices MM Wilkins, J Gupta, A Jaouad, B Bouzazi, S Fafard, A Boucherif, ... Journal of Photonics for Energy 7 (2), 022502-022502, 2017 | 5 | 2017 |
| Design optimizations of InGaAsN (Sb) subcells for concentrator photovoltaic systems R Cheriton, MM Wilkins, P Sharma, CE Valdivia, AH Trojnar, H Schriemer, ... Journal of Vacuum Science & Technology B 34 (2), 2016 | 5 | 2016 |
Richard ArèsUniversité de Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
