受强制性开放获取政策约束的文章 - Young Woo Ok了解详情
无法在其他位置公开访问的文章：4 篇
High Implied Voc (> 715 mV) and low emitter saturation current density (∼ 10fA/cm2) from a lightly B doped implanted emitter
YW Ok, AD Upadhyaya, B Rounsaville, K Madini, K Jones, K Ryu, ...
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-3, 2015
强制性开放获取政策： US Department of Energy
Field-effect passivation by charge injection into SiNx using a novel low-cost plasma charging method
E Cho, YW Ok, J Hwang, AD Upadhyaya, JK Tate, F Zimbardi, A Rohatgi
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2874-2877, 2016
强制性开放获取政策： US Department of Energy
Impact of deposition of ITO on tunnel oxide passivating poly-Si contact
W Yoon, YW Ok, D Scheiman, A Rohatgi, P Jenkins
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2713-2716, 2019
强制性开放获取政策： US Department of Defense
Field-effect passivation by negative charge on boron emitter and boron-doped surfaces by a novel low-cost plasma charge injection
E Cho, YW Ok, J Hwang, A Jain, VD Upadhyaya, JK Tate, A Rohatgi
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 333-336, 2017
强制性开放获取政策： US Department of Energy
可在其他位置公开访问的文章：32 篇
26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiO x Passivating Contact …
A Rohatgi, K Zhu, J Tong, DH Kim, E Reichmanis, B Rounsaville, ...
IEEE Journal of Photovoltaics 10 (2), 417-422, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy
Passivated tunneling contacts to n-type wafer silicon and their implementation into high performance solar cells
P Stradins, S Essig, W Nemeth, BG Lee, D Young, A Norman, Y Liu, ...
National Renewable Energy Lab.(NREL), Golden, CO (United States), 2014
强制性开放获取政策： US Department of Energy
Fabrication and modeling of high-efficiency front junction n-type silicon solar cells with tunnel oxide passivating back contact
A Rohatgi, B Rounsaville, YW Ok, AM Tam, F Zimbardi, AD Upadhyaya, ...
IEEE Journal of Photovoltaics 7 (5), 1236-1243, 2017
强制性开放获取政策： US Department of Energy
Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem …
W Yoon, D Scheiman, YW Ok, Z Song, C Chen, G Jernigan, A Rohatgi, ...
Solar Energy Materials and Solar Cells 210, 110482, 2020
强制性开放获取政策： US Department of Energy, US Department of Defense
Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact
YY Huang, YW Ok, K Madani, W Choi, AD Upadhyaya, VD Upadhyaya, ...
Solar energy materials and solar cells 214, 110585, 2020
强制性开放获取政策： US Department of Energy
Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact
AD Upadhyaya, YW Ok, E Chang, V Upadhyaya, K Madani, K Tate, ...
IEEE Journal of Photovoltaics 6 (1), 153-158, 2015
强制性开放获取政策： US Department of Energy
730 mV implied Voc enabled by tunnel oxide passivated contact with PECVD grown and crystallized n+ polycrystalline Si
Y Tao, EL Chang, A Upadhyaya, B Roundaville, YW Ok, K Madani, ...
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-5, 2015
强制性开放获取政策： US Department of Energy
Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact
CW Chen, M Hermle, J Benick, Y Tao, YW Ok, A Upadhyaya, AM Tam, ...
Progress in Photovoltaics: Research and Applications 25 (1), 49-57, 2017
强制性开放获取政策： US Department of Energy
Hole-selective molybdenum oxide as a full-area rear contact to crystalline p-type Si solar cells
W Yoon, JE Moore, E Cho, D Scheiman, NA Kotulak, E Cleveland, YW Ok, ...
Japanese Journal of Applied Physics 56 (8S2), 08MB18, 2017
强制性开放获取政策： US Department of Defense, Natural Sciences and Engineering Research Council …
Comparison of POCl3 diffusion and phosphorus ion-implantation induced gettering in crystalline Si solar cells
E Cho, YW Ok, LD Dahal, A Das, V Upadhyaya, A Rohatgi
Solar Energy Materials and Solar Cells 157, 245-249, 2016
强制性开放获取政策： US Department of Energy
High efficiency screen-printed n-type silicon solar cell using co-diffusion of APCVD boron emitter and POCl3 back surface field
K Ryu, K Madani, A Rohatgi, YW Ok
Current Applied Physics 18 (2), 231-235, 2018
强制性开放获取政策： US Department of Energy
~ 23% rear side poly-Si/SiO2 passivated silicon solar cell with optimized ion-implanted boron emitter and screen-printed contacts
YY Huang, YW Ok, K Madani, W Choi, A Upadhyaya, V Upadhyaya, ...
Solar Energy Materials and Solar Cells 230, 111183, 2021
强制性开放获取政策： US National Science Foundation
Transparent conducting oxide-based, passivated contacts for high efficiency crystalline Si solar cells
W Yoon, E Cho, JD Myers, YW Ok, MP Lumb, JA Frantz, NA Kotulak, ...
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-4, 2015
强制性开放获取政策： Natural Sciences and Engineering Research Council of Canada
Optimization of in-situ and ex-situ doped p+ passivating contact for high efficiency p-TOPCon solar cell application
WJ Choi, K Madani, YY Huang, A Jain, YW Ok, VDUMG Kang, S Choi, ...
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 1907-1912, 2021
强制性开放获取政策： US Department of Energy
Novel process for screen-printed selective area front polysilicon contacts for TOPCon cells using laser oxidation
S Dasgupta, YW Ok, VD Upadhyaya, WJ Choi, YY Huang, S Duttagupta, ...
IEEE Journal of Photovoltaics 12 (6), 1282-1288, 2022
强制性开放获取政策： US Department of Energy
Modeling and understanding of rear junction double-side passivated contact solar cells with selective area TOPCon on front
YY Huang, A Jain, WJ Choi, K Madani, YW Ok, A Rohatgi
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 1971-1976, 2021
强制性开放获取政策： US Department of Energy
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