Optimized Pre-Treatment Process for MOS-GaN Devices Passivation A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad IEEE Electron Device Letters 35 (3), 318-320, 2014 | 37 | 2014 |
Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer A Chakroun, A Jaouad, M Bouchilaoun, O Arenas, A Soltani, H Maher physica status solidi (a) 214 (8), 1600836, 2017 | 31 | 2017 |
AlGaN/GaN MOS-HEMT device fabricated using a high quality PECVD passivation process A Chakroun, A Jaouad, A Soltani, O Arenas, V Aimez, R Arès, H Maher IEEE Electron Device Letters 38 (6), 779-782, 2017 | 26 | 2017 |
Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement A Cutivet, F Cozette, M Bouchilaoun, A Chakroun, O Arenas, M Lesecq, ... IEEE Electron Device Letters 38 (2), 240-243, 2016 | 24 | 2016 |
A Hydrogen plasma treatment for soft and selective silicon nitride etching M Bouchilaoun, A Soltani, A Chakroun, A Jaouad, M Darnon, F Boone, ... physica status solidi (a) 215 (9), 1700658, 2018 | 12 | 2018 |
Leishmania major large RAB GTPase is highly immunogenic in individuals immune to cutaneous and visceral leishmaniasis R Chamakh-Ayari, M Chenik, AS Chakroun, N Bahi-Jaber, K Aoun, ... Parasites & Vectors 10, 1-11, 2017 | 12 | 2017 |
Screening and Characterization of RAPD Markers in Viscerotropic Leishmania Parasites I Mkada–Driss, R Lahmadi, AS Chakroun, C Talbi, S Guerbouj, M Driss, ... PLoS One 9 (10), e109773, 2014 | 9 | 2014 |
High power normally-OFF GaN/AlGaN HEMT with regrown p type GaN G Rolland, C Rodriguez, G Gommé, A Boucherif, A Chakroun, ... Energies 14 (19), 6098, 2021 | 6 | 2021 |
Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors A Cutivet, M Bouchilaoun, A Chakroun, C Rodriguez, A Soltani, A Jaouad, ... physica status solidi c 14 (11), 1700225, 2017 | 4 | 2017 |
Thermal performance assessment in AlGaN/GaN structures by microsensor integration O Arenas, É Al Alam, A Chakroun, V Aimez, A Jaouad, R Ares, F Boone, ... 2015 10th European Microwave Integrated Circuits Conference (EuMIC), 227-230, 2015 | 2 | 2015 |
Passivation de la Surface Du Nitrure de Gallium Par Dépôt PECVD D'oxyde de Silicium A Chakroun Université de Sherbrooke, 2015 | 2 | 2015 |
Effective GaN Surface passivation by plasma enhanced chemical vapor deposition of silicon oxide A Chakroun, A Jaouad, A Giguere, V Aimez, R Ares International Journal of Nanoscience 11 (04), 1240023, 2012 | 1 | 2012 |
Differentiation among cutaneous Leishmania species upon amplification of a sequence of dipeptidyl peptidase III encoding gene H Kbaier-Hachemi, M Barhoumi, AS Chakroun, I Guizani Archives de L'institut Pasteur de Tunis 85 (1-4), 45-53, 2008 | 1 | 2008 |
Differenciation des especes responsables de leishmaniose cutanée par une amplification PCR du gene codant pour la dipeptidyl peptidase III H Kbaier-Hachemi, M Barhoumi, AS Chakroun, MB Fadhel, I Guizani Archives de l'Institut Pasteur de Tunis 85 (1-4), 45, 2008 | 1 | 2008 |
A variant of DDRT-PCR using anchored mini-exon primers for identification of differentially expressed sequences in Leishmania infantum L Turki-Mannoubi, H Kbaier-Hachemi, M Barhoumi, AS Chakroun, ... Archives de L'institut Pasteur de Tunis 85 (1-4), 29-44, 2008 | 1 | 2008 |
Handheld Ultra-Fast Duplex Polymerase Chain Reaction Assays and Lateral Flow Detection and Identification of Leishmania Parasites for Cutaneous … I Bel Hadj Ali, Y Saadi-Ben Aoun, Z Hammami, O Rhouma, AS Chakroun, ... Pathogens 12 (11), 1292, 2023 | | 2023 |
Handheld Ultra-Fast duplex PCR assays and Lateral flow detection and identification of Leishmania parasites for cutaneous leishmanisis diagnosis IBH Ali, YSB Aoun, Z Hammami, O Rhouma, AS Chakroun, I Guizani Preprints, 2023 | | 2023 |
Présentation du GIP-CNFM-CIME Nanotech A Aitoumeri Abdelhamid Aitoumeri, 2023 | | 2023 |
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN. Energies 2021, 14, 6098 G Rolland, C Rodriguez, G Gommé, A Boucherif, A Chakroun, ... s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021 | | 2021 |
Characterization and modeling of transient self-heating in GaN HEMTs A Cutivet, M Bouchilaoun, A Chakroun, A Soltani, A Jaouad, F Boone, ... 12th International Conference on Nitride Semiconductors 2017 (ICNS-12), 2017 | | 2017 |