Two-dimensional materials for next-generation computing technologies C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou Nature Nanotechnology 15 (7), 545-557, 2020 | 674 | 2020 |
A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility S Wang, C Chen, Z Yu, Y He, X Chen, Q Wan, Y Shi, DW Zhang, H Zhou, ... Advanced Materials 31 (3), 1806227, 2019 | 404 | 2019 |
Unipolar barrier photodetectors based on van der Waals heterostructures Y Chen, Y Wang, Z Wang, Y Gu, Y Ye, X Chai, J Ye, Y Chen, R Xie, ... Nature Electronics 4 (5), 357-363, 2021 | 361 | 2021 |
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications C Liu, X Yan, X Song, S Ding, DW Zhang, P Zhou Nature nanotechnology 13 (5), 404-410, 2018 | 360 | 2018 |
ReS2‐Based Field‐Effect Transistors and Photodetectors E Zhang, Y Jin, X Yuan, W Wang, C Zhang, L Tang, S Liu, P Zhou, W Hu, ... Advanced Functional Materials 25 (26), 4076-4082, 2015 | 348 | 2015 |
Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets E Zhang, P Wang, Z Li, H Wang, C Song, C Huang, ZG Chen, L Yang, ... ACS nano 10 (8), 8067-8077, 2016 | 313 | 2016 |
Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ... Advanced materials 31 (7), 1805284, 2019 | 268 | 2019 |
Tunable Charge-Trap Memory Based on Few-Layer MoS2 E Zhang, W Wang, C Zhang, Y Jin, G Zhu, Q Sun, DW Zhang, P Zhou, ... ACS nano 9 (1), 612-619, 2015 | 258 | 2015 |
Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou Advanced Functional Materials 28 (40), 1803728, 2018 | 249 | 2018 |
Reproducible unipolar resistance switching in stoichiometric ZrO2 films X Wu, P Zhou, J Li, LY Chen, HB Lv, YY Lin, TA Tang Applied Physics Letters 90 (18), 2007 | 246 | 2007 |
Study of structure and optical properties of silver oxide films by ellipsometry, XRD and XPS methods XY Gao, SY Wang, J Li, YX Zheng, RJ Zhang, P Zhou, YM Yang, LY Chen Thin Solid Films 455, 438-442, 2004 | 244 | 2004 |
All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition Z Zhang, S Wang, C Liu, R Xie, W Hu, P Zhou Nature Nanotechnology 17 (1), 27-32, 2022 | 231 | 2022 |
Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level Y Shen, S Yang, P Zhou, Q Sun, P Wang, L Wan, J Li, L Chen, X Wang, ... Carbon 62, 157-164, 2013 | 226 | 2013 |
Memory materials and devices: From concept to application Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou InfoMat 2 (2), 261-290, 2020 | 213 | 2020 |
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing S Wang, L Liu, L Gan, H Chen, X Hou, Y Ding, S Ma, DW Zhang, P Zhou Nature Communications 12 (1), 53, 2021 | 207 | 2021 |
Tunable SnSe2/WSe2 Heterostructure Tunneling Field Effect Transistor X Yan, C Liu, C Li, W Bao, S Ding, DW Zhang, P Zhou Small 13 (34), 1701478, 2017 | 205 | 2017 |
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains G Wu, B Tian, L Liu, W Lv, S Wu, X Wang, Y Chen, J Li, Z Wang, S Wu, ... Nature Electronics 3 (1), 43-50, 2020 | 202 | 2020 |
Small footprint transistor architecture for photoswitching logic and in situ memory C Liu, H Chen, X Hou, H Zhang, J Han, YG Jiang, X Zeng, DW Zhang, ... Nature nanotechnology 14 (7), 662-667, 2019 | 194 | 2019 |
Recent advances on neuromorphic devices based on chalcogenide phase‐change materials M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao Advanced Functional Materials 30 (50), 2003419, 2020 | 188 | 2020 |
Ultra-low power Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junction synapses for hardware neural network applications L Chen, TY Wang, YW Dai, MY Cha, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Nanoscale 10 (33), 15826-15833, 2018 | 186 | 2018 |