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Zhou Peng
Zhou Peng
在 fudan.edu.cn 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Two-dimensional materials for next-generation computing technologies
C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou
Nature Nanotechnology 15 (7), 545-557, 2020
6742020
A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility
S Wang, C Chen, Z Yu, Y He, X Chen, Q Wan, Y Shi, DW Zhang, H Zhou, ...
Advanced Materials 31 (3), 1806227, 2019
4042019
Unipolar barrier photodetectors based on van der Waals heterostructures
Y Chen, Y Wang, Z Wang, Y Gu, Y Ye, X Chai, J Ye, Y Chen, R Xie, ...
Nature Electronics 4 (5), 357-363, 2021
3612021
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications
C Liu, X Yan, X Song, S Ding, DW Zhang, P Zhou
Nature nanotechnology 13 (5), 404-410, 2018
3602018
ReS2‐Based Field‐Effect Transistors and Photodetectors
E Zhang, Y Jin, X Yuan, W Wang, C Zhang, L Tang, S Liu, P Zhou, W Hu, ...
Advanced Functional Materials 25 (26), 4076-4082, 2015
3482015
Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets
E Zhang, P Wang, Z Li, H Wang, C Song, C Huang, ZG Chen, L Yang, ...
ACS nano 10 (8), 8067-8077, 2016
3132016
Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors
X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ...
Advanced materials 31 (7), 1805284, 2019
2682019
Tunable Charge-Trap Memory Based on Few-Layer MoS2
E Zhang, W Wang, C Zhang, Y Jin, G Zhu, Q Sun, DW Zhang, P Zhou, ...
ACS nano 9 (1), 612-619, 2015
2582015
Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning
X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou
Advanced Functional Materials 28 (40), 1803728, 2018
2492018
Reproducible unipolar resistance switching in stoichiometric ZrO2 films
X Wu, P Zhou, J Li, LY Chen, HB Lv, YY Lin, TA Tang
Applied Physics Letters 90 (18), 2007
2462007
Study of structure and optical properties of silver oxide films by ellipsometry, XRD and XPS methods
XY Gao, SY Wang, J Li, YX Zheng, RJ Zhang, P Zhou, YM Yang, LY Chen
Thin Solid Films 455, 438-442, 2004
2442004
All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition
Z Zhang, S Wang, C Liu, R Xie, W Hu, P Zhou
Nature Nanotechnology 17 (1), 27-32, 2022
2312022
Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level
Y Shen, S Yang, P Zhou, Q Sun, P Wang, L Wan, J Li, L Chen, X Wang, ...
Carbon 62, 157-164, 2013
2262013
Memory materials and devices: From concept to application
Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou
InfoMat 2 (2), 261-290, 2020
2132020
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing
S Wang, L Liu, L Gan, H Chen, X Hou, Y Ding, S Ma, DW Zhang, P Zhou
Nature Communications 12 (1), 53, 2021
2072021
Tunable SnSe2/WSe2 Heterostructure Tunneling Field Effect Transistor
X Yan, C Liu, C Li, W Bao, S Ding, DW Zhang, P Zhou
Small 13 (34), 1701478, 2017
2052017
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
G Wu, B Tian, L Liu, W Lv, S Wu, X Wang, Y Chen, J Li, Z Wang, S Wu, ...
Nature Electronics 3 (1), 43-50, 2020
2022020
Small footprint transistor architecture for photoswitching logic and in situ memory
C Liu, H Chen, X Hou, H Zhang, J Han, YG Jiang, X Zeng, DW Zhang, ...
Nature nanotechnology 14 (7), 662-667, 2019
1942019
Recent advances on neuromorphic devices based on chalcogenide phase‐change materials
M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao
Advanced Functional Materials 30 (50), 2003419, 2020
1882020
Ultra-low power Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junction synapses for hardware neural network applications
L Chen, TY Wang, YW Dai, MY Cha, H Zhu, QQ Sun, SJ Ding, P Zhou, ...
Nanoscale 10 (33), 15826-15833, 2018
1862018
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