| Conductivity-dependent dielectric properties and microwave absorption of Al-doped SiC whiskers J Kuang, P Jiang, F Ran, W Cao Journal of Alloys and Compounds 687, 227-231, 2016 | 100 | 2016 |
| n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route FY Ran, Z Xiao, Y Toda, H Hiramatsu, H Hosono, T Kamiya Scientific Reports 5 (1), 10428, 2015 | 79 | 2015 |
| Ferromagnetism in Cu-doped AlN films FY Ran, M Subramanian, M Tanemura, Y Hayashi, T Hihara Applied Physics Letters 95 (11), 2009 | 65 | 2009 |
| Route to n-type doping in SnS Z Xiao, FY Ran, H Hosono, T Kamiya Applied Physics Letters 106 (15), 2015 | 57 | 2015 |
| Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method F Ran, L Miao, S Tanemura, M Tanemura, Y Cao, S Tanaka, N Shibata Materials Science and Engineering: B 148 (1-3), 35-39, 2008 | 51 | 2008 |
| Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition FY Ran, Z Xiao, H Hiramatsu, H Hosono, T Kamiya Applied Physics Letters 104 (7), 2014 | 44 | 2014 |
| Narrow Bandgap in β-BaZn2As2 and Its Chemical Origins Z Xiao, H Hiramatsu, S Ueda, Y Toda, FY Ran, J Guo, H Lei, S Matsuishi, ... Journal of the American Chemical Society 136 (42), 14959-14965, 2014 | 43 | 2014 |
| Effect of substrate temperature on the room-temperature ferromagnetism of Cu-doped ZnO films FY Ran, M Tanemura, Y Hayashi, T Hihara Journal of crystal growth 311 (17), 4270-4274, 2009 | 39 | 2009 |
| Effects of Pb doping on hole transport properties and thin-film transistor characteristics of SnO thin films M Liao, Z Xiao, FY Ran, H Kumomi, T Kamiya, H Hosono ECS Journal of Solid State Science and Technology 4 (3), Q26, 2015 | 23 | 2015 |
| Angle-resolved photoemission study of Fe3O4 (0 0 1) films across Verwey transition FY Ran, Y Tsunemaru, T Hasegawa, Y Takeichi, A Harasawa, K Yaji, ... Journal of Physics D: Applied Physics 45 (27), 275002, 2012 | 23 | 2012 |
| A novel inorganic precipitation–peptization method for VO2 sol and VO2 nanoparticles preparation: Synthesis, characterization and mechanism Y Li, P Jiang, W Xiang, F Ran, W Cao Journal of colloid and interface science 462, 42-47, 2016 | 22 | 2016 |
| Valence band structure and magnetic properties of Co-doped Fe3O4 (100) films FY Ran, Y Tsunemaru, T Hasegawa, Y Takeichi, A Harasawa, K Yaji, ... Journal of applied physics 109 (12), 2011 | 22 | 2011 |
| SnS thin films prepared by H2S-free process and its p-type thin film transistor FY Ran, Z Xiao, H Hiramatsu, K Ide, H Hosono, T Kamiya AIP Advances 6 (1), 2016 | 21 | 2016 |
| Analyses of Surface and Interfacial Layers in PolycrystallineThin-Film Transistors FY Ran, M Taniguti, H Hosono, T Kamiya Journal of Display Technology 11 (9), 720-724, 2015 | 17 | 2015 |
| Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, β-BaZn2As2 Z Xiao, FY Ran, H Hiramatsu, S Matsuishi, H Hosono, T Kamiya Thin Solid Films 559, 100-104, 2014 | 17 | 2014 |
| Detection of dead layers and defects in polycrystalline Cu2O thin-film transistors by x-ray reflectivity and photoresponse spectroscopy analyses FY Ran, H Hiramatsu, H Hosono, T Kamiya, M Taniguti Journal of Vacuum Science & Technology B 33 (5), 2015 | 16 | 2015 |
| Room‐temperature ferromagnetism of Cu‐doped ZnO films deposited by helicon magnetron sputtering FY Ran, M Imaoka, M Tanemura, Y Hayashi, TS Herng, SP Lau physica status solidi (b) 246 (6), 1243-1247, 2009 | 15 | 2009 |
| Photocatalytic degradation of methylene blue aqueous solution under visible light irradiation by using N-doped titanium dioxide YH Li, WB Cao, FY Ran, XN Zhang Key Engineering Materials 336, 1972-1975, 2007 | 15 | 2007 |
| Multiple states and roles of hydrogen in p-type SnS semiconductors Z Xiao, FY Ran, M Liao, H Hiramatsu, K Ide, H Hosono, T Kamiya Physical Chemistry Chemical Physics 20 (32), 20952-20956, 2018 | 13 | 2018 |
| Influence of Annealing on the Structure and 1.54 µm Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol–Gel Method L Miao, X Xiao, F Ran, S Tanemura, G Xu Japanese Journal of Applied Physics 50 (6R), 061101, 2011 | 11 | 2011 |
