| Silicon carbide: A unique platform for metal-oxide-semiconductor physics G Liu, BR Tuttle, S Dhar Applied Physics Reviews 2 (2), 2015 | 305 | 2015 |
| Mechanical stability of possible structures of PtN investigated using first-principles calculations SKR Patil, SV Khare, BR Tuttle, JK Bording, S Kodambaka Physical Review B 73 (10), 104118, 2006 | 205 | 2006 |
| Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ... Journal of Applied Physics 109 (3), 2011 | 156 | 2011 |
| Tunneling through ultrathin gate oxides from microscopic models M Städele, BR Tuttle, K Hess Journal of Applied Physics 89 (1), 348-363, 2001 | 149 | 2001 |
| Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon B Tuttle, CG Van de Walle Physical review B 59 (20), 12884, 1999 | 141 | 1999 |
| A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ... IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011 | 84 | 2011 |
| Energetics and diffusion of hydrogen in SiO 2 B Tuttle Physical Review B 61 (7), 4417, 2000 | 80 | 2000 |
| Atomic state and characterization of nitrogen at the SiC/SiO2 interface Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita, AC Ahyi, Y Sharma, ... Journal of Applied Physics 115 (3), 2014 | 78 | 2014 |
| Microscopic theory of hydrogen in silicon devices CG Van de Walle, BR Tuttle IEEE Transactions on Electron Devices 47 (10), 1779-1786, 2000 | 73 | 2000 |
| Diffusion of O vacancies near Si: Hf O 2 interfaces: An ab initio investigation C Tang, B Tuttle, R Ramprasad Physical Review B 76 (7), 073306, 2007 | 71 | 2007 |
| Defect Interactions ofin: Implications for ELDRS and Latent Interface Trap Buildup BR Tuttle, DR Hughart, RD Schrimpf, DM Fleetwood, ST Pantelides IEEE Transactions on Nuclear Science 57 (6), 3046-3053, 2010 | 70 | 2010 |
| Energetics of hydrogen in amorphous silicon: An ab initio study B Tuttle, JB Adams Physical Review B 57 (20), 12859, 1998 | 67 | 1998 |
| Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime K Hess, LF Register, B Tuttle, J Lyding, IC Kizilyalli Physica E: Low-dimensional Systems and Nanostructures 3 (1-3), 1-7, 1998 | 66 | 1998 |
| Theory of channel hot-carrier degradation in MOSFETs K Hess, LF Register, W McMahon, B Tuttle, O Aktas, U Ravaioli, ... Physica B: Condensed Matter 272 (1-4), 527-531, 1999 | 64 | 1999 |
| Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors YS Puzyrev, BR Tuttle, RD Schrimpf, DM Fleetwood, ST Pantelides Applied Physics Letters 96 (5), 2010 | 61 | 2010 |
| Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions T Roy, YS Puzyrev, BR Tuttle, DM Fleetwood, RD Schrimpf, DF Brown, ... Applied Physics Letters 96 (13), 2010 | 59 | 2010 |
| Reactions of water molecules in silica-based network glasses IG Batyrev, B Tuttle, DM Fleetwood, RD Schrimpf, L Tsetseris, ... Physical review letters 100 (10), 105503, 2008 | 59 | 2008 |
| Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption K Hess, B Tuttle, F Register, DK Ferry Applied Physics Letters 75 (20), 3147-3149, 1999 | 55 | 1999 |
| Large excitonic effects in group-IV sulfide monolayers BR Tuttle, SM Alhassan, ST Pantelides Physical Review B 92 (23), 235405, 2015 | 54 | 2015 |
| The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ... IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012 | 49 | 2012 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt University在 vanderbilt.edu 的电子邮件经过验证
