受强制性开放获取政策约束的文章 - Michael Mastro了解详情
无法在其他位置公开访问的文章：7 篇
Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
J Kim, MA Mastro, MJ Tadjer, J Kim
ACS applied materials & interfaces 10 (35), 29724-29729, 2018
强制性开放获取政策： US Department of Defense
Delta-doped β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
强制性开放获取政策： US Department of Defense
Site control of quantum emitters in gallium nitride by polarity
MAP Nguyen, J Hite, MA Mastro, M Kianinia, M Toth, I Aharonovich
Applied Physics Letters 118 (2), 2021
强制性开放获取政策： US Department of Defense, Australian Research Council
Effect of GaN substrate properties on vertical GaN PiN diode electrical performance
JC Gallagher, TJ Anderson, AD Koehler, MA Ebrish, GM Foster, ...
Journal of Electronic Materials 50, 3013-3021, 2021
强制性开放获取政策： US Department of Energy, US Department of Defense, Natural Sciences and …
Lateral GaN JFET devices on large area engineered substrates
TJ Anderson, LE Luna, O Aktas, GM Foster, AD Koehler, MJ Tadjer, ...
ECS Journal of Solid State Science and Technology 8 (12), Q226, 2019
强制性开放获取政策： Natural Sciences and Engineering Research Council of Canada
GaN homoepitaxial growth and substrate-dependent effects for vertical power devices
JK Hite, MA Mastro, TJ Anderson, JC Gallagher, M Ebrish, JA Freitas
ECS Transactions 98 (6), 63, 2020
强制性开放获取政策： US Department of Defense
Defect characterization of multicycle rapid thermal annealing processed p-GaN for vertical power devices
Y Wang, T Bai, C Li, MJ Tadjer, TJ Anderson, JK Hite, MA Mastro, ...
ECS Journal of Solid State Science and Technology 8 (2), P70, 2019
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：26 篇
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
强制性开放获取政策： US Department of Defense
Perspective—opportunities and future directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
强制性开放获取政策： US Department of Defense
Characterizing the tunable refractive index of vanadium dioxide
M Currie, MA Mastro, VD Wheeler
Optical Materials Express 7 (5), 1697-1707, 2017
强制性开放获取政策： US Department of Defense
Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors
T Hossain, D Wei, JH Edgar, NY Garces, N Nepal, JK Hite, MA Mastro, ...
Journal of Vacuum Science & Technology B 33 (6), 2015
强制性开放获取政策： US Department of Energy
Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3
NR Johnson, JK Hite, MA Mastro, C Eddy, SM George
Applied Physics Letters 114 (24), 2019
强制性开放获取政策： US Department of Defense
Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors
J Yang, P Carey, F Ren, MA Mastro, K Beers, SJ Pearton, II Kravchenko
Applied Physics Letters 113 (3), 2018
强制性开放获取政策： US Department of Energy, US Department of Defense
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
JK Hite, TJ Anderson, LE Luna, JC Gallagher, MA Mastro, JA Freitas, ...
Journal of Crystal Growth 498, 352-356, 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense, Gordon and Betty …
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
强制性开放获取政策： US Department of Defense
Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures
J Yang, P Carey, F Ren, YL Wang, ML Good, S Jang, MA Mastro, ...
Applied Physics Letters 111 (20), 2017
强制性开放获取政策： US National Science Foundation, US Department of Defense
Programmable multilevel memtransistors based on van der Waals heterostructures
H Park, MA Mastro, MJ Tadjer, J Kim
Advanced Electronic Materials 5 (10), 1900333, 2019
强制性开放获取政策： US Department of Defense
Effect of surface morphology on diode performance in vertical GaN Schottky diodes
JK Hite, TJ Anderson, MA Mastro, LE Luna, JC Gallagher, RL Myers-Ward, ...
ECS Journal of Solid State Science and Technology 6 (11), S3103, 2017
强制性开放获取政策： US Department of Defense
Valence and conduction band offsets for InN and III-nitride ternary alloys on (− 201) bulk β-Ga2O3
C Fares, MJ Tadjer, J Woodward, N Nepal, MA Mastro, CR Eddy, F Ren, ...
ECS Journal of Solid State Science and Technology 8 (7), Q3154, 2019
强制性开放获取政策： US Department of Defense
Controlling the threshold voltage of β-Ga 2 O 3 field-effect transistors via remote fluorine plasma treatment
J Kim, MJ Tadjer, MA Mastro, J Kim
Journal of Materials Chemistry C 7 (29), 8855-8860, 2019
强制性开放获取政策： US Department of Defense
出版信息和资助信息由计算机程序自动确定