| Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height JYJ Lin, AM Roy, A Nainani, Y Sun, KC Saraswat Applied Physics Letters 98, 092113, 2011 | 163 | 2011 |
| Specific contact resistivity of tunnel barrier contacts used for Fermi level depinning AM Roy, JYJ Lin, KC Saraswat IEEE electron device letters 31 (10), 1077-1079, 2010 | 90 | 2010 |
| Reduction in Specific Contact Resistivity to n+ Ge Using TiO2 Interfacial Layer JY Jason Lin, AM Roy, KC Saraswat IEEE electron device letters 33 (11), 1541-1543, 2012 | 66* | 2012 |
| Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance Z Yuan, A Nainani, Y Sun, JYJ Lin, P Pianetta, KC Saraswat Applied Physics Letters 98, 172106, 2011 | 60 | 2011 |
| THz-bandwidth tunable slow light in semiconductor optical amplifiers FG Sedgwick, B Pesala, JY Lin, WS Ko, X Zhao, CJ Chang-Hasnain Optics Express 15 (2), 747-753, 2007 | 56 | 2007 |
| Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ... 2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012 | 51 | 2012 |
| Low-contact-resistivity nickel germanide contacts on n+ Ge with phosphorus/antimony co-doping and Schottky barrier height lowering B Yang, JYJ Lin, S Gupta, A Roy, S Liang, WP Maszara, Y Nishi, ... 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | 24 | 2012 |
| Low resistance contacts to n-type germanium JYJ Lin Stanford University, 2013 | 22 | 2013 |
| The effect of fixed charge in tunnel-barrier contacts for Fermi-level depinning in germanium AM Roy, J Lin, KC Saraswat IEEE electron device letters 33 (6), 761-763, 2012 | 21 | 2012 |
| Fabrication of GeSn-on-insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics JYJ Lin, S Gupta, YC Huang, Y Kim, M Jin, E Sanchez, R Chen, K Balram, ... 2013 Symposium on VLSI Technology, T32-T33, 2013 | 14 | 2013 |
| Metal-insulator-semiconductor contacts on Ge: Physics and applications JYJ Lin, AM Roy, Y Sun, KC Saraswat 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | 9 | 2012 |
| Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium WS Jung, JH Nam, JYJ Lin, S Ryu, A Nainani, KC Saraswat 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | 4 | 2012 |
| Characterization of Geometric Leakage Current ofIsolation and Effect of Forming Gas Annealing in Germanium p-n Junctions WS Jung, JH Park, JYJ Lin, S Wong, KC Saraswat IEEE electron device letters 33 (11), 1520-1522, 2012 | 2 | 2012 |
| Increase of Fractional Advance in THz-Bandwidth Fast Light by Pulse Chirping in an SOA FG Sedgwick, B Pesala, JY Lin, CJ Chang-Hasnain, T Lin Slow and Fast Light, STuA5, 2007 | 2 | 2007 |
| THz Tunable Slow Light in Semiconductor Optical Amplifiers FG Sedgwick, B Pesala, JY Lin, WS Ko, X Zhao, CJ Chang-Hasnain Optical Fiber Communication Conference, OThT5, 2007 | 2 | 2007 |
| Schottky Barrier Height Engineering for Low Resistance Contacts to Ge and III-V Devices K Saraswat, JYJ Lin, A Nainani, A Roy, B Yang, Z Yuan Meeting Abstracts, 2630-2630, 2012 | 1 | 2012 |
| Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs Z Yuan, A Nainani, JY Lin, BR Bennett, JB Boos, MG Ancona, ... 69th Device Research Conference, 143-144, 2011 | 1 | 2011 |
