| Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ... Journal of Applied Physics 81 (9), 6031-6050, 1997 | 900 | 1997 |
| Electronics for detection of a condition of tissue C Rafferty, JD Carbeck, A Dickson, K Dowling, YY Hsu, I Kacyvenski, ... US Patent 9,579,040, 2017 | 305 | 2017 |
| PISCES II: Poisson and continuity equation solver MR Pinto, CS Rafferty, RW Dutton | 295 | 1984 |
| B diffusion and clustering in ion implanted Si: The role of B cluster precursors L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, ... Applied physics letters 70 (17), 2285-2287, 1997 | 279 | 1997 |
| B cluster formation and dissolution in Si: A scenario based on atomistic modeling L Pelaz, GH Gilmer, HJ Gossmann, CS Rafferty, M Jaraiz, J Barbolla Applied physics letters 74 (24), 3657-3659, 1999 | 216 | 1999 |
| The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 209 | 1999 |
| Motion sensor and analysis I Kacyvenski, LT Cheng, KJ Dowling, A Kendale, C Rafferty US Patent App. 14/294,808, 2015 | 203 | 2015 |
| Simulation of cluster evaporation and transient enhanced diffusion in silicon CS Rafferty, GH Gilmer, M Jaraiz, D Eaglesham, HJ Gossmann Applied physics letters 68 (17), 2395-2397, 1996 | 202 | 1996 |
| Nonobtuse triangulation of polygons BS Baker, E Grosse, CS Rafferty Discrete & Computational Geometry 3, 147-168, 1988 | 195 | 1988 |
| Iterative methods in semiconductor device simulation CS Rafferty, MR Pinto, RW Dutton IEEE Transactions on Electron Devices 32 (10), 2018-2027, 1985 | 154 | 1985 |
| Conformal sensor systems for sensing and analysis R Ghaffari, I Kacyvenski, C Rafferty, M Raj, M Ceruolo, YY Hsu, B Keen, ... US Patent 10,467,926, 2019 | 149 | 2019 |
| Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby HJL Gossmann, CS Rafferty US Patent 6,153,920, 2000 | 141 | 2000 |
| Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities HJ Gossmann, CS Rafferty, HS Luftman, FC Unterwald, T Boone, ... Applied physics letters 63 (5), 639-641, 1993 | 127 | 1993 |
| The role of the surface in transient enhanced diffusion DR Lim, CS Rafferty, FP Klemens Applied physics letters 67 (16), 2302-2304, 1995 | 125 | 1995 |
| Pisces-iib MR Pinto, CS Rafferty, HR Yeager, RW Dutton IIB, 1985 | 125 | 1985 |
| Embedding thin chips in polymer C Rafferty, M Dalal US Patent 9,171,794, 2015 | 121 | 2015 |
| Explanation of reverse short channel effect by defect gradients CS Rafferty, HH Vuong, SA Eshraghi, MD Giles, MR Pinto, SJ Hillenius Proceedings of IEEE International Electron Devices Meeting, 311-314, 1993 | 118 | 1993 |
| Semiconductor devices with photoresponsive components and metal silicide light blocking structures CS Rafferty, C King US Patent 7,629,661, 2009 | 115 | 2009 |
| Multi-dimensional quantum effect simulation using a density-gradient model and script-level programming techniques CS Rafferty, B Biegel, Z Yu, MG Ancona, J Bude, RW Dutton Simulation of Semiconductor Processes and Devices 1998: SISPAD 98, 137-140, 1998 | 107 | 1998 |
| Conformal electronics integrated with apparel S Fastert, KJ Dowling, B Schlatka, C Rafferty US Patent 9,082,025, 2015 | 105 | 2015 |
