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Ryo Ohshima
Ryo Ohshima
在 kyoto-u.ac.jp 的电子邮件经过验证
标题
引用次数
引用次数
年份
Strong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface
R Ohshima, Y Ando, K Matsuzaki, T Susaki, M Weiler, S Klingler, H Huebl, ...
Nature Materials 16 (6), 609-614, 2017
712017
Giant spin Hall angle in the Heusler alloy Weyl ferromagnet
L Leiva, S Granville, Y Zhang, S Dushenko, E Shigematsu, T Shinjo, ...
Physical Review B 103 (4), L041114, 2021
572021
Transport and spin conversion of multicarriers in semimetal bismuth
H Emoto, Y Ando, G Eguchi, R Ohshima, E Shikoh, Y Fuseya, T Shinjo, ...
Physical Review B 93 (17), 174428, 2016
562016
Quantitative investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on YIG
M Matsushima, Y Ando, S Dushenko, R Ohshima, R Kumamoto, T Shinjo, ...
Applied Physics Letters 110 (7), 2017
402017
Observation of spin-charge conversion in chemical-vapor-deposition-grown single-layer graphene
R Ohshima, A Sakai, Y Ando, T Shinjo, K Kawahara, H Ago, M Shiraishi
Applied Physics Letters 105 (16), 2014
302014
Note: Derivative divide, a method for the analysis of broadband ferromagnetic resonance in the frequency domain
H Maier-Flaig, STB Goennenwein, R Ohshima, M Shiraishi, R Gross, ...
Review of Scientific Instruments 89 (7), 2018
292018
Significant reduction in spin pumping efficiency in a platinum/yttrium iron garnet bilayer at low temperature
E Shigematsu, Y Ando, R Ohshima, S Dushenko, Y Higuchi, T Shinjo, ...
Applied Physics Express 9 (5), 053002, 2016
252016
Synthetic Rashba spin–orbit system using a silicon metal-oxide semiconductor
S Lee, H Koike, M Goto, S Miwa, Y Suzuki, N Yamashita, R Ohshima, ...
Nature Materials 20 (9), 1228-1232, 2021
242021
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve
S Lee, F Rortais, R Ohshima, Y Ando, S Miwa, Y Suzuki, H Koike, ...
Physical Review B 99 (6), 064408, 2019
232019
Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature
R Ishihara, Y Ando, S Lee, R Ohshima, M Goto, S Miwa, Y Suzuki, ...
Physical Review Applied 13 (4), 044010, 2020
172020
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
Scientific Reports 9 (1), 17032, 2019
132019
Spin-orbit coupling induced by bismuth doping in silicon thin films
F Rortais, S Lee, R Ohshima, S Dushenko, Y Ando, M Shiraishi
Applied Physics Letters 113 (12), 2018
132018
In-plane spin-orbit torque magnetization switching and its detection using the spin rectification effect at subgigahertz frequencies
M Aoki, E Shigematsu, M Matsushima, R Ohshima, S Honda, T Shinjo, ...
Physical Review B 102 (17), 174442, 2020
122020
Investigation of gating effect in Si spin MOSFET
S Lee, F Rortais, R Ohshima, Y Ando, M Goto, S Miwa, Y Suzuki, H Koike, ...
Applied Physics Letters 116 (2), 2020
122020
Efficient room-temperature magnetization direction detection by means of the enhanced anomalous Nernst effect in a Weyl ferromagnet
L Leiva, S Granville, Y Zhang, S Dushenko, E Shigematsu, R Ohshima, ...
Physical Review Materials 6 (6), 064201, 2022
112022
Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes
S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
NPG Asia Materials 13 (1), 13, 2021
112021
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
H Koike, S Lee, R Ohshima, E Shigematsu, M Goto, S Miwa, Y Suzuki, ...
Applied Physics Express 13 (8), 083002, 2020
112020
Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy
R Ohshima, S Klingler, S Dushenko, Y Ando, M Weiler, H Huebl, T Shinjo, ...
Applied Physics Letters 110 (18), 2017
112017
Ferroic Berry curvature dipole in a topological crystalline insulator at room temperature
T Nishijima, T Watanabe, H Sekiguchi, Y Ando, E Shigematsu, R Ohshima, ...
Nano Letters 23 (6), 2247-2252, 2023
82023
Anomalous sign inversion of spin-orbit torque in ferromagnetic/nonmagnetic bilayer systems due to self-induced spin-orbit torque
M Aoki, E Shigematsu, R Ohshima, T Shinjo, M Shiraishi, Y Ando
Physical Review B 106 (17), 174418, 2022
82022
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