| Improvement in ferroelectricity of HfxZr1− xO2 thin films using ZrO2 seed layer T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Chikyow, A Ogura Applied Physics Express 10 (8), 081501, 2017 | 87 | 2017 |
| Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura Microelectronic Engineering 215, 111013, 2019 | 76 | 2019 |
| Improvement in ferroelectricity of HfxZr1− xO2 thin films using top-and bottom-ZrO2 nucleation layers T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura APL Materials 7 (6), 2019 | 60 | 2019 |
| Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1− xO2/ZrO2 bilayer by atomic layer deposition T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... Applied Physics Letters 117 (23), 2020 | 25 | 2020 |
| Improved leakage current properties of ZrO2/(Ta/Nb) Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors T Onaya, T Nabatame, T Sawada, K Kurishima, N Sawamoto, A Ohi, ... Thin Solid Films 655, 48-53, 2018 | 24 | 2018 |
| Wake-up-free properties and high fatigue resistance of HfxZr1− xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300° C) T Onaya, T Nabatame, M Inoue, T Sawada, H Ota, Y Morita APL Materials 10 (5), 2022 | 23 | 2022 |
| Ferroelectric polarization retention with scaling of Hf0. 5Zr0. 5O2 on silicon J Mohan, H Hernandez-Arriaga, YC Jung, T Onaya, CY Nam, EHR Tsai, ... Applied Physics Letters 118 (10), 2021 | 23 | 2021 |
| Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1− xO2 thin films using synchrotron x-ray analysis T Onaya, T Nabatame, YC Jung, H Hernandez-Arriaga, J Mohan, HS Kim, ... APL Materials 9 (3), 2021 | 14 | 2021 |
| Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3 R Kobayashi, T Nabatame, K Kurishima, T Onaya, A Ohi, N Ikeda, ... ECS Transactions 92 (3), 3, 2019 | 14 | 2019 |
| Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor T Onaya, T Nabatame, T Sawada, K Kurishima, N Sawamoto, A Ohi, ... ECS Transactions 75 (8), 667, 2016 | 14 | 2016 |
| Improvement of ferroelectricity and fatigue property of thicker HfxZr1− xO2/ZrO2 bi-layer T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... ECS Transactions 98 (3), 63, 2020 | 13 | 2020 |
| Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors T Sawada, T Nabatame, TD Dao, I Yamamoto, K Kurishima, T Onaya, ... Journal of Vacuum Science & Technology A 35 (6), 2017 | 12 | 2017 |
| Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3 R Kobayashi, T Nabatame, T Onaya, A Ohi, N Ikeda, T Nagata, ... Japanese Journal of Applied Physics 60 (3), 030903, 2021 | 11 | 2021 |
| Ferroelectricity of HfxZr1− xO2 thin films fabricated using TiN stressor and ZrO2 nucleation techniques T Onaya, T Nabatame, N Sawamoto, K Kurishima, A Ohi, N Ikeda, ... ECS Transactions 86 (6), 31, 2018 | 11 | 2018 |
| Reliability of Al2O3/In-Si-OC Thin-Film Transistors with an Al2O3 Passivation Layer under Gate-Bias Stress K Kurishima, T Nabatame, T Onaya, K Tsukagoshi, A Ohi, N Ikeda, ... ECS Transactions 86 (11), 135, 2018 | 6 | 2018 |
| Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1− XO2-Based Metal-Ferroelectric Semiconductor T Onaya, T Nabatame, M Inoue, T Sawada, H Ota, Y Morita ECS Transactions 104 (4), 129, 2021 | 5 | 2021 |
| Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors J Mohan, YC Jung, H Hernandez-Arriaga, JH Kim, T Onaya, A Sahota, ... ACS Applied Electronic Materials 4 (4), 1405-1414, 2022 | 4 | 2022 |
| Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition T Nabatame, E Maeda, M Inoue, M Hirose, Y Irokawa, A Ohi, N Ikeda, ... Journal of Vacuum Science & Technology A 39 (6), 2021 | 4 | 2021 |
| Study of HfO2-Based High-k Gate Insulators for GaN Power Device T Nabatame, E Maeda, M Inoue, M Hirose, R Ochi, T Sawada, Y Irokawa, ... ECS transactions 104 (4), 113, 2021 | 3 | 2021 |
| Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1− xO2 thin films T Onaya, T Nabatame, T Nagata, K Tsukagoshi, J Kim, CY Nam, ... Solid-State Electronics 210, 108801, 2023 | 1 | 2023 |
Toshihide Nabatame物質・材料研究機構在 nims.go.jp 的电子邮件经过验证
