受强制性开放获取政策约束的文章 - Bei Shi了解详情
无法在其他位置公开访问的文章：7 篇
Growth Optimization of InGaAs/GaAs Multi Quantum Well Microdisk Lasers on Flat-bottom CMOS-compatible (001) Si by Selective Area Heteroepitaxy
B Shi, S Zhu, B Song, J Klamkin
2022 Compound Semiconductor Week (CSW), 1-2, 2022
强制性开放获取政策： US Department of Defense
InGaAs Photodiode Array on Silicon by Heteroepitaxy
B Song, B Shi, SŠ Brunelli, J Klamkin
CLEO: Science and Innovations, STh2H. 2, 2021
强制性开放获取政策： US Department of Defense
Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy
B Song, B Shi, S Zhu, SŠ Brunelli, J Klamkin
2021 Asia Communications and Photonics Conference (ACP), 1-3, 2021
强制性开放获取政策： US Department of Defense
InAs/GaAs Quantum Dot Lasers on CMOS-Compatible (001) Silicon by MOCVD Direct Heteroepitaxy
P Verrinder, L Wang, B Shi, S Zhu, J Klamkin
CLEO: Science and Innovations, SM2J. 2, 2023
强制性开放获取政策： US Department of Defense
Selective Area Heteroepitaxy of Quantum Dot Lasers on Nano-V-grooved Silicon
B Shi, S Zhu, B Song, D Hu, T Vo, J Herman, DL Harame, J Klamkin
Integrated Photonics Research, Silicon and Nanophotonics, IW2B. 7, 2022
强制性开放获取政策： US Department of Defense
1.55 μm Quantum Dash CW Lasers on Planar (001) Si
W Luo, Y Xue, J Huang, L Lin, B Shi, KM Lau
2020 IEEE Photonics Conference (IPC), 1-2, 2020
强制性开放获取政策： Research Grants Council, Hong Kong
Laser Integration Technologies for Silicon Photonics
J Klamkin, L Wang, B Shi, STŠ Brunelli, H Zhao, B Song
Integrated Photonics Research, Silicon and Nanophotonics, ITh1A. 1, 2019
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：39 篇
1.55 μ m room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si
B Shi, S Zhu, Q Li, CW Tang, Y Wan, EL Hu, KM Lau
Applied Physics Letters 110 (12), 121109, 2017
强制性开放获取政策： Research Grants Council, Hong Kong
Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon
B Shi, S Zhu, Q Li, Y Wan, EL Hu, KM Lau
ACS Photonics, 2017
强制性开放获取政策： Research Grants Council, Hong Kong
Continuous-wave electrically pumped 1550 nm lasers epitaxially grown on on-axis (001) silicon
B Shi, H Zhao, L Wang, B Song, ST Suran Brunelli, J Klamkin
Optica 6 (12), 1507-1514, 2019
强制性开放获取政策： US Department of Defense
MOCVD grown low dislocation density GaAs-on-V-groove patterned (001) Si for 1.3 μm quantum dot laser applications
B Shi, L Wang, AA Taylor, S Suran Brunelli, H Zhao, B Song, J Klamkin
Applied Physics Letters 114 (17), 2019
强制性开放获取政策： US Department of Defense
1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon
Y Xue, W Luo, S Zhu, L Lin, B Shi, KM Lau
Optics Express 28 (12), 18172-18179, 2020
强制性开放获取政策： Research Grants Council, Hong Kong
InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band
Y Wan, Q Li, Y Geng, B Shi, KM Lau
APPLIED PHYSICS LETTERS 107 (8), 081106, 2015
强制性开放获取政策： Research Grants Council, Hong Kong
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si
S Zhu, B Shi, Q Li, KM Lau
Optics express 26 (11), 14514-14523, 2018
强制性开放获取政策： Research Grants Council, Hong Kong
Defect engineering for high quality InP epitaxially grown on on-axis (001) Si
B Shi, J Klamkin
Journal of Applied Physics 127 (3), 2020
强制性开放获取政策： US Department of Defense
Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si
B Shi, Q Li, KM Lau
Journal of Crystal Growth 464, 28-32, 2017
强制性开放获取政策： Research Grants Council, Hong Kong
1.55-μm lasers epitaxially grown on silicon
B Shi, Y Han, Q Li, KM Lau
IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-11, 2019
强制性开放获取政策： Research Grants Council, Hong Kong
Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si
Y Wan, C Shang, J Norman, B Shi, Q Li, N Collins, M Dumont, KM Lau, ...
IEEE Journal of Selected Topics in Quantum Electronics 26 (2), 1-9, 2020
强制性开放获取政策： US Department of Energy, Research Grants Council, Hong Kong
Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters
B Shi, Q Li, KM Lau
Journal of Applied Physics 123 (19), 2018
强制性开放获取政策： Research Grants Council, Hong Kong
Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si
S Zhu, B Shi, KM Lau
Optics letters 44 (18), 4566-4569, 2019
强制性开放获取政策： Research Grants Council, Hong Kong
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