Ballistic carbon nanotube field-effect transistors A Javey, J Guo, Q Wang, M Lundstrom, H Dai nature 424 (6949), 654-657, 2003 | 4068 | 2003 |
One-Dimensional Electrical Contact to a Two-Dimensional Material CRD L Wang, I Meric, PY Huang, Q Gao, Y Gao, H Tran, T Taniguchi, K Watanabe ... Science 342 (6158), 614-617, 2013 | 3178 | 2013 |
N-doping of graphene through electrothermal reactions with ammonia X Wang, X Li, L Zhang, Y Yoon, PK Weber, H Wang, J Guo, H Dai science 324 (5928), 768-771, 2009 | 2414 | 2009 |
Atomically thin p–n junctions with van der Waals heterointerfaces CH Lee, GH Lee, AM Van Der Zande, W Chen, Y Li, M Han, X Cui, ... Nature nanotechnology 9 (9), 676-681, 2014 | 2322 | 2014 |
Room temperature all semiconducting sub-10nm graphene nanoribbon field-effect transistors X Wang, Y Ouyang, X Li, H Wang, J Guo, H Dai arXiv preprint arXiv:0803.3464, 2008 | 1858 | 2008 |
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ... Nature materials 1 (4), 241-246, 2002 | 1416 | 2002 |
Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003 | 978 | 2003 |
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium H Fang, M Tosun, G Seol, TC Chang, K Takei, J Guo, A Javey Nano letters 13 (5), 1991-1995, 2013 | 825 | 2013 |
High-field quasiballistic transport in short carbon nanotubes A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai Physical Review Letters 92 (10), 106804, 2004 | 802 | 2004 |
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ... Nano Letters 4 (3), 447-450, 2004 | 777 | 2004 |
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ... Nano letters 4 (7), 1319-1322, 2004 | 746 | 2004 |
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2 SB Desai, G Seol, JS Kang, H Fang, C Battaglia, R Kapadia, JW Ager, ... Nano letters 14 (8), 4592-4597, 2014 | 702 | 2014 |
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ... ACS nano 9 (2), 2071-2079, 2015 | 681 | 2015 |
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts A Javey, R Tu, DB Farmer, J Guo, RG Gordon, H Dai Nano letters 5 (2), 345-348, 2005 | 636 | 2005 |
Performance limits of monolayer transition metal dichalcogenide transistors L Liu, SB Kumar, Y Ouyang, J Guo IEEE Transactions on Electron Devices 58 (9), 3042-3047, 2011 | 594 | 2011 |
Nanoscale transistors: device physics, modeling and simulation M Lundstrom, J Guo Springer Science & Business Media, 2006 | 579 | 2006 |
Diameter-dependent electron mobility of InAs nanowires AC Ford, JC Ho, YL Chueh, YC Tseng, Z Fan, J Guo, J Bokor, A Javey Nano Letters 9 (1), 360-365, 2009 | 477 | 2009 |
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors J Guo, S Datta, M Lundstrom IEEE transactions on electron devices 51 (2), 172-177, 2004 | 395 | 2004 |
Performance projections for ballistic carbon nanotube field-effect transistors J Guo, M Lundstrom, S Datta Applied physics letters 80 (17), 3192-3194, 2002 | 392 | 2002 |
Toward multiscale modeling of carbon nanotube transistors J Guo, S Datta, M Lundstrom, MP Anantam International Journal for Multiscale Computational Engineering 2 (2), 2004 | 302 | 2004 |