受强制性开放获取政策约束的文章 - Christian Wenger了解详情
无法在其他位置公开访问的文章：53 篇
Filament growth and resistive switching in hafnium oxide memristive devices
S Dirkmann, J Kaiser, C Wenger, T Mussenbrock
ACS applied materials & interfaces 10 (17), 14857-14868, 2018
强制性开放获取政策： German Research Foundation
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 2009
强制性开放获取政策： German Research Foundation
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ...
Advanced Functional Materials 27 (32), 1700432, 2017
强制性开放获取政策： German Research Foundation, Federal Ministry of Education and Research, Germany
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM
S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ...
ACS applied materials & interfaces 12 (9), 10648-10656, 2020
强制性开放获取政策： Natural Sciences and Engineering Research Council of Canada, 国家自然科学基 …
Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning
M Ziegler, C Wenger, E Chicca, H Kohlstedt
Journal of Applied Physics 124 (15), 2018
强制性开放获取政策： German Research Foundation
Electron holography on HfO2/HfO2− x bilayer structures with multilevel resistive switching properties
G Niu, MA Schubert, SU Sharath, P Zaumseil, S Vogel, C Wenger, ...
Nanotechnology 28 (21), 215702, 2017
强制性开放获取政策： 国家自然科学基金委员会, German Research Foundation
Variability and energy consumption tradeoffs in multilevel programming of RRAM arrays
E Perez, MK Mahadevaiah, EPB Quesada, C Wenger
IEEE Transactions on Electron Devices 68 (6), 2693-2698, 2021
强制性开放获取政策： German Research Foundation, Federal Ministry of Education and Research, Germany
Inherent Stochastic Learning in CMOS-Integrated HfO2 Arrays for Neuromorphic Computing
C Wenger, F Zahari, MK Mahadevaiah, E Perez, I Beckers, H Kohlstedt, ...
IEEE Electron Device Letters 40 (4), 639-642, 2019
强制性开放获取政策： German Research Foundation
Investigation of the oxidation behavior of graphene/Ge (001) versus graphene/Ge (110) systems
F Akhtar, J Dabrowski, M Lisker, Y Yamamoto, A Mai, C Wenger, ...
ACS applied materials & interfaces 12 (2), 3188-3197, 2020
强制性开放获取政策： Federal Ministry of Education and Research, Germany
Atomic Layer Deposition of HfO2 Thin Films Employing a Heteroleptic Hafnium Precursor
K Xu, AP Milanov, H Parala, C Wenger, C Baristiran‐Kaynak, K Lakribssi, ...
Chemical Vapor Deposition 18 (1‐3), 27-35, 2012
强制性开放获取政策： German Research Foundation
Dielectrophoretic immobilisation of nanoparticles as isolated singles in regular arrays
X Knigge, C Wenger, FF Bier, R Hölzel
Journal of Physics D: Applied Physics 51 (6), 065308, 2018
强制性开放获取政策： German Research Foundation
Reliability of cmos integrated memristive hfo2 arrays with respect to neuromorphic computing
MK Mahadevaiah, E Pérez, C Wenger, A Grossi, C Zambelli, P Olivo, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019
强制性开放获取政策： German Research Foundation
Demonstration of a graphene-base heterojunction transistor with saturated output current
C Strobel, CA Chavarin, B Leszczynska, S Leszczynski, F Winkler, ...
Journal of Applied Physics 125 (23), 2019
强制性开放获取政策： German Research Foundation
Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes
C Strobel, CA Chavarin, J Kitzmann, G Lupina, C Wenger, M Albert, ...
Journal of Applied Physics 121 (24), 2017
强制性开放获取政策： German Research Foundation
Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation
AJ Pérez-Ávila, G González-Cordero, E Pérez, EPB Quesada, ...
2020 XXXV Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2020
强制性开放获取政策： German Research Foundation, Government of Spain
Parameter extraction methods for assessing device-to-device and cycle-to-cycle variability of memristive devices at wafer scale
E Perez, D Maldonado, EPB Quesada, MK Mahadevaiah, ...
IEEE Transactions on Electron Devices 70 (1), 360-365, 2022
强制性开放获取政策： Government of Spain, Federal Ministry of Education and Research, Germany
The role of the bottom and top interfaces in the 1st reset operation in HfO2 based RRAM devices
E Perez, MK Mahadevaiah, C Wenger, C Zambelli, P Olivo
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
强制性开放获取政策： German Research Foundation
Influence of variability on the performance of HfO2 memristor-based convolutional neural networks
R Romero-Zaliz, E Perez, F Jimenez-Molinos, C Wenger, JB Roldan
Solid-State Electronics 185, 108064, 2021
强制性开放获取政策： German Research Foundation, Government of Spain, Federal Ministry of …
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies
E Perez, D Maldonado, C Acal, JE Ruiz-Castro, AM Aguilera, ...
Solid-State Electronics 176, 107961, 2021
强制性开放获取政策： German Research Foundation, Government of Spain
Implementation of Siamese-based few-shot learning algorithms for the distinction of COPD and asthma subjects
PS Zarrin, C Wenger
Artificial Neural Networks and Machine Learning–ICANN 2020: 29th …, 2020
强制性开放获取政策： Federal Ministry of Education and Research, Germany
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