关注
Daesu Lee
标题
引用次数
引用次数
年份
Giant flexoelectric effect in ferroelectric epitaxial thin films
D Lee, A Yoon, SY Jang, JG Yoon, JS Chung, M Kim, JF Scott, TW Noh
Physical review letters 107 (5), 057602, 2011
4742011
Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
D Lee, SH Baek, TH Kim, JG Yoon, CM Folkman, CB Eom, TW Noh
Physical Review B 84 (12), 125305, 2011
3432011
Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures
L Wang, Q Feng, Y Kim, R Kim, KH Lee, SD Pollard, YJ Shin, H Zhou, ...
Nature materials 17 (12), 1087-1094, 2018
3252018
Emergence of room-temperature ferroelectricity at reduced dimensions
D Lee, H Lu, Y Gu, SY Choi, SD Li, S Ryu, TR Paudel, K Song, E Mikheev, ...
Science 349 (6254), 1314-1317, 2015
3162015
Isostructural metal-insulator transition in VO2
D Lee, B Chung, Y Shi, GY Kim, N Campbell, F Xue, K Song, SY Choi, ...
Science 362 (6418), 1037-1040, 2018
2042018
Multilevel data storage memory using deterministic polarization control
D Lee, SM Yang, TH Kim, BC Jeon, YS Kim, JG Yoon, HN Lee, SH Baek, ...
Advanced Materials 24 (3), 402-406, 2012
1642012
Flexoelectric Effect in the Reversal of Self‐Polarization and Associated Changes in the Electronic Functional Properties of BiFeO3 Thin Films
BC Jeon, D Lee, MH Lee, SM Yang, SC Chae, TK Song, SD Bu, ...
Advanced Materials 25 (39), 5643-5649, 2013
1602013
Epitaxial stabilization of a new multiferroic hexagonal phase of TbMnO3 thin films
JH Lee, P Murugavel, H Ryu, D Lee, JY Jo, JW Kim, HJ Kim, KH Kim, Y Jo, ...
Advanced Materials 18 (23), 3125-3129, 2006
1232006
Electronic structures of hexagonal R Mn O 3 (R= Gd, Tb, Dy, and Ho) thin films: Optical spectroscopy and first-principles calculations
WS Choi, DG Kim, SSA Seo, SJ Moon, D Lee, JH Lee, HS Lee, DY Cho, ...
Physical Review B 77 (4), 045137, 2008
1212008
Sharpened VO2 Phase Transition via Controlled Release of Epitaxial Strain
D Lee, J Lee, K Song, F Xue, SY Choi, Y Ma, J Podkaminer, D Liu, SC Liu, ...
Nano Letters 17 (9), 5614-5619, 2017
1092017
Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films
D Lee, BC Jeon, A Yoon, YJ Shin, MH Lee, TK Song, SD Bu, M Kim, ...
Advanced Materials 26 (29), 5005-5011, 2014
1062014
Active Control of Ferroelectric Switching Using Defect‐Dipole Engineering
D Lee, BC Jeon, SH Baek, SM Yang, YJ Shin, TH Kim, YS Kim, JG Yoon, ...
Advanced Materials 24 (48), 6490-6495, 2012
922012
Enhanced flexoelectricity at reduced dimensions revealed by mechanically tunable quantum tunnelling
S Das, B Wang, TR Paudel, SM Park, EY Tsymbal, LQ Chen, D Lee, ...
Nature communications 10 (1), 1-7, 2019
862019
Giant flexoelectric effect through interfacial strain relaxation
D Lee, TW Noh
Philosophical Transactions of the Royal Society of London A: Mathematical …, 2012
862012
Multiferroic properties of epitaxially stabilized hexagonal thin films
JH Lee, P Murugavel, D Lee, TW Noh, Y Jo, MH Jung, KH Jang, JG Park
Applied physics letters 90 (1), 012903, 2007
862007
Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics
D Lee, SM Yang, JG Yoon, TW Noh
Nano letters 12 (12), 6436-6440, 2012
672012
Physical properties of multiferroic hexagonal thin films
P Murugavel, JH Lee, D Lee, TW Noh, Y Jo, MH Jung, YS Oh, KH Kim
Applied physics letters 90 (14), 142902, 2007
652007
Epitaxial stabilization of artificial hexagonal thin films and their magnetic properties
D Lee, JH Lee, P Murugavel, SY Jang, TW Noh, Y Jo, MH Jung, YD Ko, ...
Applied physics letters 90 (18), 182504, 2007
592007
Optical spectroscopic investigation on the coupling of electronic and magnetic structure in multiferroic hexagonal R MnO 3 (R= Gd, Tb, Dy, and Ho) thin films
WS Choi, SJ Moon, SSA Seo, D Lee, JH Lee, P Murugavel, TW Noh, ...
Physical Review B 78 (5), 054440, 2008
552008
Continuous Control of Charge Transport in Bi‐Deficient BiFeO3 Films Through Local Ferroelectric Switching
TH Kim, BC Jeon, T Min, SM Yang, D Lee, YS Kim, SH Baek, W Saenrang, ...
Advanced Functional Materials 22 (23), 4962-4968, 2012
452012
系统目前无法执行此操作,请稍后再试。
文章 1–20