| Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties P Palacios, I Aguilera, K Sánchez, JC Conesa, P Wahnón Physical Review Letters 101 (4), 046403, 2008 | 169 | 2008 |
| Evidence for a direct band gap in the topological insulator BiSe from theory and experiment IA Nechaev, RC Hatch, M Bianchi, D Guan, C Friedrich, I Aguilera, JL Mi, ... Physical Review B—Condensed Matter and Materials Physics 87 (12), 121111, 2013 | 144 | 2013 |
| Synthesis and Spectral Properties of Nanocrystalline V-Substituted In2S3, a Novel Material for More Efficient Use of Solar Radiation R Lucena, I Aguilera, P Palacios, P Wahnón, JC Conesa Chemistry of Materials 20 (16), 5125-5127, 2008 | 133 | 2008 |
| Assessment through first-principles calculations of an intermediate-band photovoltaic material based on Ti-implanted silicon: Interstitial versus substitutional origin K Sánchez, I Aguilera, P Palacios, P Wahnón Physical Review B—Condensed Matter and Materials Physics 79 (16), 165203, 2009 | 127 | 2009 |
| Electronic phase transitions of bismuth under strain from relativistic self-consistent calculations I Aguilera, C Friedrich, S Blügel Physical Review B 91 (12), 125129, 2015 | 124 | 2015 |
| Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al) K Sánchez, I Aguilera, P Palacios, P Wahnón Physical Review B—Condensed Matter and Materials Physics 82 (16), 165201, 2010 | 122 | 2010 |
| study of topological insulators BiSe, BiTe, and SbTe: Beyond the perturbative one-shot approach I Aguilera, C Friedrich, G Bihlmayer, S Blügel Physical Review B—Condensed Matter and Materials Physics 88 (4), 045206, 2013 | 112 | 2013 |
| First-principles study of the band structure and optical absorption of CuGaS I Aguilera, J Vidal, P Wahnon, L Reining, S Botti Physical Review B—Condensed Matter and Materials Physics 84 (8), 085145, 2011 | 96 | 2011 |
| V-doped SnS2: a new intermediate band material for a better use of the solar spectrum P Wahnon, JC Conesa, P Palacios, R Lucena, I Aguilera, Y Seminovski, ... Physical Chemistry Chemical Physics 13 (45), 20401-20407, 2011 | 92 | 2011 |
| Direct Observation of the Band Gap Transition in Atomically Thin ReS2 M Gehlmann, I Aguilera, G Bihlmayer, S Nemšák, P Nagler, ... Nano letters 17 (9), 5187-5192, 2017 | 81 | 2017 |
| Bulk band structure of M Michiardi, I Aguilera, M Bianchi, VE de Carvalho, LO Ladeira, ... Physical Review B 90 (7), 075105, 2014 | 78 | 2014 |
| Quasiparticle spectrum and plasmonic excitations in the topological insulator IA Nechaev, I Aguilera, V De Renzi, A Di Bona, A Lodi Rizzini, AM Mio, ... Physical Review B 91 (24), 245123, 2015 | 68 | 2015 |
| Theoretical optoelectronic analysis of and thiospinels: Effect of transition-metal substitution in intermediate-band formation I Aguilera, P Palacios, K Sánchez, P Wahnón Physical Review B—Condensed Matter and Materials Physics 81 (7), 075206, 2010 | 61 | 2010 |
| Spin-orbit coupling in quasiparticle studies of topological insulators I Aguilera, C Friedrich, S Blügel Physical Review B—Condensed Matter and Materials Physics 88 (16), 165136, 2013 | 60 | 2013 |
| Thermodynamics of the Formation of Ti- and Cr-doped CuGaS2 Intermediate-band Photovoltaic Materials P Palacios, I Aguilera, P Wahnón, JC Conesa The Journal of Physical Chemistry C 112 (25), 9525-9529, 2008 | 60 | 2008 |
| Enhancement of optical absorption in Ga-chalcopyrite-based intermediate-band materials for high efficiency solar cells I Aguilera, P Palacios, P Wahnón Solar Energy Materials and Solar Cells 94 (11), 1903-1906, 2010 | 58 | 2010 |
| Optical properties of chalcopyrite-type intermediate transition metal band materials from first principles I Aguilera, P Palacios, P Wahnón Thin Solid Films 516 (20), 7055-7059, 2008 | 56 | 2008 |
| Surface Fermi arc connectivity in the type-II Weyl semimetal candidate J Sánchez-Barriga, MG Vergniory, D Evtushinsky, I Aguilera, ... Physical Review B 94 (16), 161401, 2016 | 52 | 2016 |
| Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk crystals M Gehlmann, I Aguilera, G Bihlmayer, E Młyńczak, M Eschbach, S Döring, ... Scientific reports 6 (1), 26197, 2016 | 52 | 2016 |
| V-substituted In 2 S 3: an intermediate band material with photocatalytic activity in the whole visible light range R Lucena, JC Conesa, I Aguilera, P Palacios, P Wahnón Journal of Materials Chemistry A 2 (22), 8236-8245, 2014 | 47 | 2014 |
Perla WahnonUniversidad Politecnica de Madrid在 upm.es 的电子邮件经过验证
