| Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In 2 Se 3 thin layers S Wan, Y Li, W Li, X Mao, W Zhu, H Zeng Nanoscale 10 (31), 14885-14892, 2018 | 228 | 2018 |
| Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3 S Wan, Y Li, W Li, X Mao, C Wang, C Chen, J Dong, A Nie, J Xiang, Z Liu, ... Advanced Functional Materials 29 (20), 1808606, 2019 | 220 | 2019 |
| Band Gap and Band Offset of and Alloys T Wang, W Li, C Ni, A Janotti Physical Review Applied 10 (1), 011003, 2018 | 162 | 2018 |
| Large disparity between optical and fundamental band gaps in layered W Li, FP Sabino, F Crasto de Lima, T Wang, RH Miwa, A Janotti Physical Review B 98 (16), 165134, 2018 | 81 | 2018 |
| Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric α-In2Se3 YLCCWLXMHLJXANZLWZH Zeng Advanced Electronic Materials 6 (7), 2000061, 2020 | 76 | 2020 |
| Single-Layered MoS2 Directly Grown on Rutile TiO2(110) for Enhanced Interfacial Charge Transfer H Liu, Y Li, M Xiang, H Zeng, X Shao ACS nano 13 (5), 6083-6089, 2019 | 66 | 2019 |
| Band gap evolution in Ruddlesden-Popper phases W Li, S Niu, B Zhao, R Haiges, Z Zhang, J Ravichandran, A Janotti Physical Review Materials 3 (10), 101601, 2019 | 48 | 2019 |
| Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3 (Adv. Funct. Mater. 20/2019) S Wan, Y Li, W Li, X Mao, C Wang, C Chen, J Dong, A Nie, J Xiang, Z Liu, ... Advanced Functional Materials 29 (20), 1970136, 2019 | 5 | 2019 |
| Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3 Y Li, C Chen, W Li, X Mao, H Liu, J Xiang, A Nie, Z Liu, W Zhu, H Zeng arXiv preprint arXiv:2005.04926, 2020 | | 2020 |
| Crystal growth, electronic structure and optical properties of BaZrS3 and its Ruddlesden-Popper phases S Niu, K Williams, W Li, D Sarkar, F Hou, B Zhao, K Ye, E Bianco, ... APS March Meeting Abstracts 2019, B11. 008, 2019 | | 2019 |
| A switchable diode based on room-temperature two-dimensional ferroelectric {\alpha}-In2Se3 thin layers S Wan, Y Li, W Li, X Mao, W Zhu, H Zeng arXiv preprint arXiv:1803.04664, 2018 | | 2018 |
| Fundamental and optical band gaps of layered In2Se3 W Li, FP Sabino, A Janotti APS March Meeting Abstracts 2018, R37. 013, 2018 | | 2018 |
| This journal is© The Royal Society of Chemistry 2018 N Kamo, G Hayashia, A Okamoto | | |
