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Hicham HELAL
Hicham HELAL
Sensor Laboratory, Università degli Studi di Brescia, Italy
在 univ-sba.dz 的电子邮件经过验证
标题
引用次数
引用次数
年份
Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer
A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ...
Superlattices and Microstructures 146, 106665, 2020
362020
Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes
H Helal, Z Benamara, AH Kacha, M Amrani, A Rabehi, B Akkal, G Monier, ...
Superlattices and Microstructures 135, 106276, 2019
172019
A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range
H Helal, Z Benamara, MB Arbia, A Khettou, A Rabehi, AH Kacha, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2020
162020
Simulation and optimization of InGaN Schottky solar cells to enhance the interface quality
A Khettou, I Zeydi, M Chellali, MB Arbia, S Mansouri, H Helal, H Maaref
Superlattices and Microstructures 142, 106539, 2020
142020
A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters
H Helal, Z Benamara, BG Pérez, AH Kacha, A Rabehi, MA Wederni, ...
The European Physical Journal Plus 135 (11), 895, 2020
82020
Optimal estimation of Schottky diode parameters using advanced swarm intelligence algorithms
A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ...
Semiconductors 54, 1398-1405, 2020
62020
A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
H Helal, Z Benamara, E Comini, AH Kacha, A Rabehi, K Khirouni, ...
The European Physical Journal Plus 137 (4), 450, 2022
42022
Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of c urrent‐voltage
H Helal, Z Benamara, MB Arbia, A Rabehi, AC Chaouche, H Maaref
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021
42021
Conduction mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky contacts in a wide temperature range
H Helal, Z Benamara, MA Wederni, S Mourad, K Khirouni, G Monier, ...
Materials 14 (20), 5909, 2021
42021
Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield
MB Arbia, H Helal, F Saidi, H Maaref
Journal of Electronic Materials 49 (11), 6308-6316, 2020
42020
Advancements and Prospects of Electronic Nose in Various Applications: A Comprehensive Review
A Rabehi, H Helal, D Zappa, E Comini
Applied Sciences 14 (11), 4506, 2024
32024
Recent Advances in Low-Dimensional Metal Oxides via Sol-Gel Method for Gas Detection
M Ben Arbia, H Helal, E Comini
Nanomaterials 14 (4), 359, 2024
22024
Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
A Rabehi, B Akkal, M Amrani, S Tizi, Z Benamara, H Helal, A Douara, ...
Semiconductors 55 (4), 446-454, 2021
22021
Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function
R Abdelaziz, R Abdelhalim, D Abdelmalek, H Hicham, B Oussama, ...
Sumy State University, 2022
12022
Nanostructured Materials for Enhanced Performance of Solid Oxide Fuel Cells: A Comprehensive Review
H Helal, M Ahrouch, A Rabehi, D Zappa, E Comini
Crystals 14 (4), 306, 2024
2024
Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization
A Rabehi, A Douara, A Rabehi, H Helal, AM Younsi, M Amrani, IE Abbas, ...
Revista Mexicana de Física 70 (2 Mar-Apr), 021004 1–8-021004 1–8, 2024
2024
Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
S Benykrelef, S Mansouri, H Helal, A Rabehi, A Joti, Z Benamara
The Journal of Engineering and Exact Sciences 9 (4), 15855-01e, 2023
2023
Electrical characterization of Au/GaN/n-GaAs Schottky nano-structures in a wide temperature range
H Helal, Z Benamara, AH Kacha, K Kirouni, G Monier, CR Goumet, S Tizi, ...
La deuxième édition de la Conférence Internationale sur les Sciences et …, 2022
2022
Elaborations et caractérisations de nanostructures réalisées sur des matériaux III/V nitrurés
H HELAL
2021
Study of Temperature-dependent Conduction Mechanisms in Au/0.8 nm-GaN/n-GaAs Schottky Diode
H Helal, Z Benamara, MA Wederni, S Mourad, K Khirouni, G Monier, ...
2021
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