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Mode-locked dark pulse Kerr combs in normal-dispersion microresonators X Xue, Y Xuan, Y Liu, PH Wang, S Chen, J Wang, DE Leaird, M Qi, ... Nature Photonics 9 (9), 594-600, 2015 | 727 | 2015 |
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007 | 631 | 2007 |
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012 | 520 | 2012 |
Ultrabroad-bandwidth arbitrary radiofrequency waveform generation with a silicon photonic chip-based spectral shaper MH Khan, H Shen, Y Xuan, L Zhao, S Xiao, DE Leaird, AM Weiner, M Qi Nature Photonics 4 (2), 117-122, 2010 | 464 | 2010 |
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008 | 412 | 2008 |
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Top-gated graphene field-effect-transistors formed by decomposition of SiC YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ... Applied Physics Letters 92 (9), 2008 | 303 | 2008 |
Investigation of mode coupling in normal-dispersion silicon nitride microresonators for Kerr frequency comb generation Y Liu, Y Xuan, X Xue, PH Wang, S Chen, AJ Metcalf, J Wang, DE Leaird, ... optica 1 (3), 137-144, 2014 | 299 | 2014 |
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Atomic-layer-deposited nanostructures for graphene-based nanoelectronics Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye Applied Physics Letters 92 (1), 2008 | 297 | 2008 |
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High-Q silicon nitride microresonators exhibiting low-power frequency comb initiation Y Xuan, Y Liu, LT Varghese, AJ Metcalf, X Xue, PH Wang, K Han, ... Optica 3 (11), 1171-1180, 2016 | 254 | 2016 |
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High-order coherent communications using mode-locked dark-pulse Kerr combs from microresonators A Fülöp, M Mazur, A Lorences-Riesgo, ÓB Helgason, PH Wang, Y Xuan, ... Nature Communications 9 (4), 1598, 2018 | 232 | 2018 |
Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Depositedas Gate Dielectric Y Xuan, YQ Wu, HC Lin, T Shen, DY Peide IEEE Electron Device Letters 28 (11), 935-938, 2007 | 220 | 2007 |
Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric Y Xuan, HC Lin, PD Ye, GD Wilk Applied physics letters 88 (26), 2006 | 210 | 2006 |
Microcomb-based true-time-delay network for microwave beamforming with arbitrary beam pattern control X Xue, Y Xuan, C Bao, S Li, X Zheng, B Zhou, M Qi, AM Weiner Journal of lightwave technology 36 (12), 2312-2321, 2018 | 202 | 2018 |
Large-scale nanoshaping of ultrasmooth 3D crystalline metallic structures H Gao, Y Hu, Y Xuan, J Li, Y Yang, RV Martinez, C Li, J Luo, M Qi, ... Science 346 (6215), 1352-1356, 2014 | 201 | 2014 |