关注
David J Frank
David J Frank
IBM Watson Research Center
在 us.ibm.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Device scaling limits of Si MOSFETs and their application dependencies
DJ Frank, RH Dennard, E Nowak, PM Solomon, Y Taur, HSP Wong
Proceedings of the IEEE 89 (3), 259-288, 2001
20282001
CMOS scaling into the nanometer regime
Y Taur, D Buchanan, W Chen, DJ Frank, KE Ismail, SH Lo, G Sai-Halasz, ...
Proceedings of the IEEE 85 (4), 486-504, 1997
12921997
Three-dimensional integrated circuits
AW Topol, DC La Tulipe, L Shi, DJ Frank, K Bernstein, SE Steen, A Kumar, ...
IBM Journal of Research and Development 50 (4.5), 491-506, 2006
9022006
High-performance CMOS variability in the 65-nm regime and beyond
K Bernstein, DJ Frank, AE Gattiker, W Haensch, BL Ji, SR Nassif, ...
IBM journal of research and development 50 (4.5), 433-449, 2006
7062006
Nanoscale cmos
HSP Wong, DJ Frank, PM Solomon, CHJ Wann, JJ Welser
Proceedings of the IEEE 87 (4), 537-570, 1999
6991999
Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure
SE Laux, DJ Frank, F Stern
Surface Science 196 (1), 101-106, 1988
4741988
Generalized scale length for two-dimensional effects in MOSFETs
DJ Frank, Y Taur, HSP Wong
Electron Device Letters, IEEE 19 (10), 385-387, 1998
4311998
Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation
HSP Wong, DJ Frank, PM Solomon
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
4291998
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
DJ Frank, SE Laux, MV Fischetti
Electron Devices Meeting, 1992. IEDM'92. Technical Digest., International …, 1992
4271992
25 nm CMOS design considerations
Y Taur, CH Wann, DJ Frank
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
3641998
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
AW Topol, DC La Tulipe, L Shi, SM Alam, DJ Frank, SE Steen, J Vichiconti, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
3532005
Power-constrained CMOS scaling limits
DJ Frank
IBM Journal of Research and Development 46 (2.3), 235-244, 2002
3392002
Toward High-performance digital logic technology with carbon nanotubes
GS Tulevski, AD Franklin, D Frank, JM Lobez, Q Cao, H Park, A Afzali, ...
ACS nano 8 (9), 8730-8745, 2014
3212014
Highly efficient algorithm for percolative transport studies in two dimensions
DJ Frank, CJ Lobb
Physical Review B 37 (1), 302, 1988
3201988
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature nanotechnology 8 (10), 748, 2013
2862013
EMPIRICAL FIT TO BAND DISCONTINUITIES AND BARRIER HEIGHTS IN III-V ALLOY SYSTEMS-REPLY
S TIWARI, DJ FRANK
APPLIED PHYSICS LETTERS 61 (18), 2244-2244, 1992
280*1992
Empirical fit to band discontinuities and barrier heights in III–V alloy systems
S Tiwari, DJ Frank
Applied physics letters 60 (5), 630-632, 1992
2801992
Methods of forming wiring to transistor and related transistor
DJ Frank, DC LaTulipe Jr, SE Steen, AW Topol
US Patent App. 14/167,298, 2014
263*2014
Methods of forming wiring to transistor and related transistor
DJ Frank, DC La Tulipe Jr, SE Steen, AW Topol
US Patent 7,666,723, 2010
2592010
Overlay as the key to drive wafer scale 3D integration
SE Steen, D LaTulipe, AW Topol, DJ Frank, K Belote, D Posillico
Microelectronic engineering 84 (5-8), 1412-1415, 2007
2542007
系统目前无法执行此操作,请稍后再试。
文章 1–20